High speed switching N channel MOSFET XYD X3402MB featuring TrenchMOS technology for power control
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Delivery Time:
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Product Description
Product Overview
The X3402MB is an N-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features TrenchMOS technology for very fast switching and is logic level compatible. Its subminiature surface mount package makes it suitable for battery management, high-speed switching, and low-power DC to DC converters.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Origin: China
- Package: SOT-23-3L
- Technology: TrenchMOS
Technical Specifications
| Parameter | Symbol | Values | Unit | Note/Test Conditions | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | - | 30 | V | - | |
| Gate-Source Voltage | VGS | -12 | - | 12 | V | - |
| Continuous Drain Current | ID | - | - | 3 | A | TC=25 (Note 1) |
| Pulsed Drain Current | IDM | - | - | 12 | A | - (Note 2) |
| Single Pulse Avalanche Energy | EAS | - | - | 16 | mJ | L=0.5mH,VD=24V, TC=25 |
| Maximum Power Dissipation | PD | - | - | 1.2 | W | TA=25 |
| Operating Junction and Storage Temperature Range | Tj,TSTG | -50 | - | 150 | - | |
| Thermal Characteristics | ||||||
| Thermal resistance, Junction to Ambient | Rth(J-a) | - | 103 | - | /W | - |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 30 | - | - | V | VGS=0V,ID=250A |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | A | VDS=30V,VGS=0V |
| Gate-Body Leakage Current,Forward | IGSSF | - | - | 100 | nA | VGS=12V,VDS=0V |
| Gate-Body Leakage Current,Reverse | IGSSR | - | - | -100 | nA | VGS=-12V,VDS=0V |
| Gate-Source Threshold Voltage | VGS(th) | 0.6 | - | 1.5 | V | VDS=VGS,ID=250A |
| Drain-Source On-State Resistance | RDS(on) | - | 34 | 43 | m | VGS=10V,ID=3.6A |
| - | 35 | 44 | m | VGS=4.5V,ID=2A | ||
| - | 46 | 58 | m | VGS=2.5V,ID=1A | ||
| Gate Resistance | Rg | - | 3.7 | - | VGS=0V, VDS=0V, f=1MHz | |
| Forward Transconductance | gfs | - | 4 | - | S | VDS=5V,ID=3.6A |
| Dynamic Characteristics | ||||||
| Capacitance | Ciss | - | 299 | - | pF | VDS=25V,VGS=0V,f=1.0MHZ |
| Coss | - | 31 | - | pF | - | |
| Crss | - | 19 | - | pF | - | |
| Switching Times | td(on) | - | 3.8 | - | ns | VDD=15V , VGS=10V , RG=10 ID=3A |
| tr | - | 3.2 | - | ns | - | |
| Switching Times | td(off) | - | 31.4 | - | ns | - |
| tf | - | 12.2 | - | ns | - | |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | - | 8.1 | - | nC | VDS=24V,ID=3A,VGS=10V |
| Gate-Source Charge | Qgs | - | 1.2 | - | nC | - |
| Gate-Drain Charge | Qg | - | 1.2 | - | nC | - |
| Reverse Diode Characteristics | ||||||
| Continuous Diode Forward Current | IS | - | - | 3 | A | - |
| Pulsed Diode Forward Current | ISM | - | - | 12 | A | - |
| Diode Forward Voltage | VSD | - | - | 1.2 | V | IS=3.6A,VGS=0V |
| Reverse Recovery Time | trr | - | 8.9 | - | ns | VDS=15V,VGS=0V,IS=1A di/dt=100A/s |
| Reverse Recovery Charge | Qrr | - | 3.8 | - | nC | - |
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