Load Switching P Channel MOSFET XYD X48P030TLM3 Featuring Trench Power MOSFET Technology
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Product Description
Product Overview
The X48P030TLM3 is a P-Channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd., featuring Trench Power MOSFET technology for excellent RDS(ON). It is designed for load switching and other general applications, offering RoHS and Halogen-Free compliance.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Certifications: RoHS and Halogen-Free Compliant
- Package: SOT-23-3L
Technical Specifications
| Parameter | Symbol | Value | Unit | Note/Test Conditions |
| Drain-Source Voltage | VDSS | -30 | V | VGS=0V |
| Gate-Source Voltage | VGS | -12 to 12 | V | VDS=0V |
| Continuous Drain Current | ID | -4 | A | TA=25 |
| Continuous Drain Current | ID | -3.2 | A | TA=70 |
| Pulsed Drain Current | IDM | -27 | A | Note 3 |
| Maximum Power Dissipation | PD | 1.4 | W | TA=25 |
| Maximum Power Dissipation | PD | 0.9 | W | TA=70 |
| Operating Junction and Storage Temperature Range | Tj,TSTG | -55 to 150 | ||
| Thermal resistance, Junction to Ambient | Rth(J-a) | 70-90 | /W | t 10s, Note 1 |
| Thermal resistance, Junction to Ambient | Rth(J-a) | 100-125 | /W | Note 1,4 |
| Thermal resistance, Junction to Lead | Rth(J-L) | 33-40 | /W | |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V,ID=-250A |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-30V,VGS=0V |
| Gate-Body Leakage Current,Forward | IGSSF | 100 | nA | VGS=12V,VDS=0V |
| Gate-Body Leakage Current,Reverse | IGSSR | -100 | nA | VGS=-12V,VDS=0V |
| Gate-Source Threshold Voltage | VGS(th) | -0.5 to -1.3 | V | VDS=VGS,ID=-250A |
| Drain-Source On-State Resistance | RDS(on) | 39-48 | m | VGS=-10V,ID=-4A |
| Drain-Source On-State Resistance | RDS(on) | 43-60 | m | VGS=-4.5V,ID=-3.5A |
| Gate resistance | Rg | 11.5 | VGS=0V, VDS=0V,f=1MHz | |
| Forward Transconductance | gfs | 19 | S | VDS=-5V,ID=-4A |
| Input Capacitance | Ciss | 753 | pF | VDS=-15V,VGS=0V,f=1.0MHZ |
| Output Capacitance | Coss | 69 | pF | |
| Reverse Transfer Capacitance | Crss | 59 | pF | |
| Turn-On Delay Time | td(on) | 4.5 | ns | VDD=-15V,RG=2.5, VGS=-10V,RL=15 |
| Turn-On Rise Time | tr | 32 | ns | |
| Turn-Off Delay Time | td(off) | 79.5 | ns | |
| Turn-Off Fall Time | tf | 62 | ns | |
| Total Gate Charge | Qg | 21 | nC | VDS=-24V,ID=-4A,VGS=-10V |
| Gate-Source Charge | Qgs | 2 | nC | |
| Gate-Drain Charge | Qg d | 2.4 | nC | |
| Continuous Diode Forward Current | IS | -4 | A | |
| Diode Forward Voltage | VSD | -1.2 | V | IS=-4A,VGS=0V |
| Body Diode Reverse Recovery Time | trr | 8.8 | ns | VGS=0V,IS=-4.0A, dI/dt=-100A/s |
| Body Diode Reverse Recovery Charge | Qrr | 2.5 | nC |
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