NPN Bipolar Junction Transistor XZT S9013 for General Purpose Amplification and Switching Applications

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Product Description

Product Overview

The S9013 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features high collector current capability, complementary pairing with the S9012 transistor, and excellent hFE linearity, making it suitable for various electronic circuits.

Product Attributes

Brand: XT ELECTRONICS
Complementary To: S9012
Package Type: SOT-23

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
V_CBO	Collector-Base Voltage	I_C=0.1mA, I_E=0			40	V
V_CEO	Collector-Emitter Voltage	I_C=1mA, I_B=0			25	V
V_EBO	Emitter-Base Voltage	I_E=0.1mA, I_C=0			5	V
I_C	Collector Current				500	mA
P_C	Collector Power Dissipation				300	mW
R_JA	Thermal Resistance From Junction To Ambient			416	/W
T_J,Tstg	Operation Junction and Storage Temperature Range		-55		+150
V_(BR)CBO	Collector-base breakdown voltage	I_C=0.1mA, I_E=0	40			V
V_(BR)CEO	Collector-emitter breakdown voltage	I_C=1mA, I_B=0	25			V
V_(BR)EBO	Emitter-base breakdown voltage	I_E=0.1mA, I_C=0	5			V
I_CBO	Collector cut-off current	V_CB=40V, I_E=0			0.1	uA
I_CEO	Collector cut-off current	V_CE=20V, I_B=0			0.1	uA
I_EBO	Emitter cut-off current	V_EB=5V, I_C=0			0.1	uA
h_FE	DC current gain	V_CE=1V, I_C=50mA	120		400
h_FE	DC current gain	V_CE=1V, I_C=500mA	40
V_CE(sat)	Collector-emitter saturation voltage	I_C=500mA, I_B=50mA			0.6	V
V_BE(sat)	Base-emitter saturation voltage	I_C=500mA, I_B=50mA			1.2	V
V_BE	Base-emitter voltage	V_CB=1V,I_C=10mA		0.7		V
f_T	Transition frequency	V_CE=6V,I_C=20mA, f=30MHz		150		MHz
C_ob	Collector output capacitance	V_CB=6V, I_E=0, f=1MHz			8	pF