Amplification and Switching Dual PNP Transistor XZT MMDT3906 SOT363 Package for Electronic Circuits

Brand: XT ELECTRONICS
Model: MMDT3906
Type: DUAL TRANSISTOR (PNP+PNP)
Package: SOT-363

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The MMDT3906 is a dual PNP transistor constructed with an epitaxial planar die. It is ideal for low power amplification and switching applications.

Symbol	Parameter	Test conditions	Min	Typ	Max	Units
V_CBO	Collector-Base Voltage				-40	V
V_CEO	Collector-Emitter Voltage				-40	V
V_EBO	Emitter-Base Voltage				-5	V
I_C	Collector Current - Continuous				-0.2	A
P_C	Collector Power Dissipation				0.2	W
T_J,Tstg	Operation Junction and Storage Temperature Range		-55		+150
V(BR)CBO	Collector-base breakdown voltage	I_C=-10A,I_E=0			-40	V
V(BR)CEO	Collector-emitter breakdown voltage	I_C=-1mA,I_B=0			-40	V
V(BR)EBO	Emitter-base breakdown voltage	I_E=-10A,I_C=0			-5	V
I_CEX	Collector cut-off current	V_CE=-30V,V_EB(OFF)=-3V			-50	nA
I_EBO	Base cut-off current	V_EB=-5V,I_C=0			-50	nA
h_FE	DC current gain	V_CE=-1V,I_C=-0.1mA	60
		V_CE=-1V,I_C=-1mA	80
		V_CE=-1V,I_C=-10mA	100
		V_CE=-1V,I_C=-50mA			300
		V_CE=-1V,I_C=-100mA			30
V_CE(sat)	Collector-emitter saturation voltage	I_C=-10mA,I_B=-1mA		-0.25		V
V_CE(sat)	Collector-emitter saturation voltage	I_C=-50mA,I_B=-5mA		-0.4		V
V_BE(sat)	Base-emitter saturation voltage	I_C=-10mA,I_B=-1mA		-0.65	-0.85	V
V_BE(sat)	Base-emitter saturation voltage	I_C=-50mA,I_B=-5mA			-0.95	V
f_T	Transition frequency	V_CE=-20V,I_C=-10mA,f=100MHz		250		MHz
C_ob	Collector output capacitance	V_CB=-5V,I_E=0,f=1MHz			4.5	pF
NF	Noise figure	V_CE=-5V,I_C=-0.1mA,f=1KHz,R_g=1K			4	dB
t_d	Delay time	V_CC=-3V, V_BE=0.5V I_C=-10mA , I_B1=-I_B2=-1mA		35		nS
t_r	Rise time	V_CC=-3V, V_BE=0.5V I_C=-10mA , I_B1=-I_B2=-1mA		35		nS
t_S	Storage time	V_CC=-3V, I_C=-10mA I_B1=-I_B2=- 1mA			225	nS
t_f	Fall time	V_CC=-3V, I_C=-10mA I_B1=-I_B2=- 1mA		75		nS