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Medium power PNP transistor XZT MMBT5401 suitable for amplification switching in compact electronics

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The MMBT5401 is a PNP transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5551 and offers reliable performance in its specified operating conditions.

Product Attributes

  • Brand: X T ELECTRONICS
  • Website: http://www.xt-elec.com
  • Model: MMBT5401
  • Complementary to: MMBT5551
  • Package Type: SOT-23
  • Marking: 2L

Technical Specifications

SymbolParameterTest ConditionsMinTypMaxUnitPart Number
V(BR)CBOCollector-base breakdown voltageIC=-100A, IE=0-160VMMBT5401
V(BR)CEOCollector-emitter breakdown voltageIC=-1mA, IB=0-150VMMBT5401
V(BR)EBOEmitter-base breakdown voltageIE=-10A, IC=0-5VMMBT5401
ICBOCollector cut-off currentVCB=-120V, IE=0-0.1AMMBT5401
IEBOEmitter cut-off currentVEB=-4V, IC=0-0.1AMMBT5401
hFEDC current gainVCE=-5V, IC=-1mA80MMBT5401
VCE=-5V, IC=-10mA100300MMBT5401
VCE=-5V, IC=-50mA50MMBT5401
VCE(sat)Collector-emitter saturation voltageIC=-10mA, IB=-1mA-0.2VMMBT5401
IC=-50mA, IB=-5mA-0.5VMMBT5401
VBE(sat)Base-emitter saturation voltageIC=-10mA, IB=-1mA-1VMMBT5401
IC=-50mA, IB=-5mA-1VMMBT5401
fTTransition frequencyVCE=-5V,IC=-10mA, f=30MHz100MHzMMBT5401
VCBOCollector-Base Voltage-160VMMBT5401
VCEOCollector-Emitter Voltage-150VMMBT5401
VEBOEmitter-Base Voltage-5VMMBT5401
ICCollector Current-0.6AMMBT5401
PCCollector Power Dissipation0.3WMMBT5401
RJAThermal Resistance from Junction to Ambient416/WMMBT5401
TJ,TstgOperation Junction and Storage Temperature Range-55+150MMBT5401

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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