General Purpose PNP Transistor YTL PBSS5140T SOT23 Package Voltage Current Gain Characteristics

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Product Description

Product Overview

This document details the specifications for a PNP transistor in a SOT-23 package. It is designed for general-purpose applications requiring specific voltage, current, and gain characteristics.

Product Attributes

Package Type: SOT-23
Transistor Type: PNP

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	Units
Collector-Base Voltage	VCBO	@ Ta=25			-40	V
Collector-Emitter Voltage	VCEO	@ Ta=25			-25	V
Emitter-Base Voltage	VEBO	@ Ta=25			-5	V
Collector Current - Continuous	IC	@ Ta=25			-1.2	A
Collector Dissipation	PC	@ Ta=25			0.3	W
Junction and Storage Temperature	Tj,Tstg	@ Ta=25	-55		150
Collector-base breakdown voltage	V(BR)CBO	IC=-100A,IE=0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-0.1mA,IB=0	-25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A,IC=0	-5			V
Collector cut-off current	ICBO	VCB=-40V,IE=0			-0.1	A
Collector cut-off current	ICEO	VCE=-20V,IB=0			-0.1	A
Emitter cut-off current	IEBO	VEB=-5V,IC=0			-0.1	A
DC current gain	hFE	VCE=-1V,IC=-100mA	120	400
DC current gain	hFE	VCE=-1V,IC=-800mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=-800mA, IB= -80mA			-0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=-800mA, IB= -80mA			-1.2	V
Transition frequency	fT	VCE=-10V, IC= -50mA, f=30MHz	100			MHz
Output capacitance	Cob	VCB=-10V,IE=0,f=1MHz		20		pF
Base-emitter voltage	VBEF	IE=-1.5A			-1.6	V