Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks

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Product Description

Product Overview

The MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.

Product Attributes

Brand: X T ELECTRONICS
Model: MMDT3904
Package: SOT-363
Type: Dual Transistor (NPN+NPN)

Technical Specifications

Symbol	Parameter	Value	Units	Test Conditions
V(BR)CBO	Collector-base breakdown voltage	60	V	IC=10A,IE=0
V(BR)CEO	Collector-emitter breakdown voltage	40	V	IC=1mA,IB=0
V(BR)EBO	Emitter-base breakdown voltage	6	V	IE=10A,IC=0
ICBO	Collector cut-off current	0.05	A	VCB=30V,IE=0
IEBO	Emitter cut-off current	0.05	A	VEB=5V,IC=0
hFE	DC current gain	40		VCE=1V,IC=0.1mA
		70		VCE=1V,IC=1mA
		100		VCE=1V,IC=10mA
		60		VCE=1V,IC=50mA
VCE(sat)	Collector-emitter saturation voltage	0.2	V	IC=10mA,IB=1mA
VCE(sat)	Collector-emitter saturation voltage	0.3	V	IC=50mA,IB=5mA
VBE(sat)	Base-emitter saturation voltage	0.65 - 0.85	V	IC=10mA,IB=1mA
VBE(sat)	Base-emitter saturation voltage	0.95	V	IC=50mA,IB=5mA
fT	Transition frequency	300	MHz	VCE=20V,IC=10mA,f=100MHz
Cob	Collector output capacitance	4	pF	VCB=5V,IE=0,f=1MHz
NF	Noise figure	5	dB	VCE=5V,Ic=0.1mA,f=1kHz,RS=1K
td	Delay time	35	nS
tr	Rise time	35	nS	VCC=3V, VBE(off)=-0.5V IC=10mA , IB1=-IB2= 1mA
ts	Storage time	200	nS
tf	Fall time	50	nS	VCC=3V, IC=10mA IB1=-IB2=1mA
ICEX	Collector cut-off current	0.05	A	VCE=30V,VBE(off)=3V
PC	Collector Power Dissipation	0.2	W	@Ta=25
TJ,Tstg	Operation Junction and Storage Temperature Range	-55~+150