N Channel SMD MOSFET XZT 2N7002 with Ultra Low On Resistance and High Drain Source Breakdown Voltage
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Product Description
Product Overview
The XT ELECTRONICS 2N7002 is a high-density cell design N-Channel SMD MOSFET offering ultra-low on-resistance. It functions as a voltage-controlled small signal switch, providing a rugged and reliable solution with high saturation current capability. This MOSFET is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: XT ELECTRONICS
- Model: 2N7002
- Package Type: SOT-23
- Marking: 7002
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 115 | mA | |||
| Power Dissipation | PD | 225 | mW | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250µA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =60V,VGS = 0V | 1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 2.5 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS =10V, ID =500mA | 5 | Ω | ||
| VGS =5V, ID =50mA | 7 | Ω | ||||
| Forward Transconductance | gfs | VDS =10V, ID =2mA | 80 | mS | ||
| Input Capacitance | Ciss | VDS =25V,VGS =0V,f =1MHz | 50 | pF | ||
| Output Capacitance | Coss | 25 | pF | |||
| Reverse Transfer Capacitance | Crss | 5 | pF | |||
| Turn-on Delay Time | td(on) | VDD=25V,VGS=10V, ID =0.5A RL=50Ω,RGEN=25Ω | 20 | nS | ||
| Turn-off Delay Time | td(off) | 40 | nS | |||
| Diode Forward Voltage | VSD | VGS =0V, IS=100mA | 1.2 | V |
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