General purpose NPN power transistor YANGJIE MJD31CQ featuring epoxy casing and AECQ101 qualification for switching

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Product Description

Product Overview

The MJD31CQ is an NPN Power Transistor designed for general purpose amplifier and low speed switching applications. It features an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. The device is moisture sensitivity level 1 and AEC-Q101 qualified.

Product Attributes

Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
Origin: China
Certifications: AEC-Q101 qualified, RoHS Compliant

Technical Specifications

Item	Symbol	Unit	Conditions	Min	Typ	Max
Maximum Ratings
Collector-Base Voltage	VCBO	V				100
Collector-Emitter Voltage	VCEO	V				100
Emitter-Base Voltage	VEBO	V				5
Collector Current -Continuous	IC	A				3
Total Device Dissipation (*)	PD	W	(Ta=25)			1.6
Thermal Resistance, Junction to Ambient Air (*)	RthJA	/W	(Ta=25)		79
Thermal Resistance, Junction to Mounting Base	RthJ-mb	/W			8.3
Junction Temperature	Tj			-55		+150
Storage Temperature	TSTG			-55		+150
Electrical Characteristics
Collector-base breakdown voltage	VCBO	V	IC= 1mA, IE=0	100
Collector-emitter breakdown voltage	VCEO	V	IC= 30mA, IB=0	100
Emitter-base breakdown voltage	VEBO	V	IE= 1mA, IC=0	5
Collector-base cut-off current	ICEO	uA	VCE= 60V, IB =0			50
Collector-base cut-off current	ICES	uA	VCE= 100V , VEB=0			20
Emitter-base cut-off current	IEBO	mA	VEB= 5V , IC=0			1
DC current gain	hFE		VCE= 4V, IC= 1A	25
DC current gain	hFE		VCE= 4V, IC= 3A	10		75
Collector-emitter saturation voltage	VCE(sat)	V	IC= 3A, IB= 0.375A			1.2
Base-emitter voltage	VBE	V	IC= 3A, VCE= 4V			1.8
Other Characteristics
Transition frequency	fT	MHz	VCE= 10V, IC= 0.5A, f=1KHz		3