Automotive Grade NPN Transistor YANGJIE MMBT3904Q with UL94 V0 Flammability and AECQ101 Qualification
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Product Description
Product Overview
The MMBT3904Q is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It is AEC-Q101 qualified and features epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This device is designed for automotive electronics applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China (implied by company name and website)
- Certifications: RoHS Compliant, AEC-Q101 Qualified
- Flammability Rating: UL-94 V-0
- Halogen Free: Yes
- Moisture Sensitivity Level: 1
Technical Specifications
| Item | Symbol | Unit | Conditions | Value |
| Maximum Ratings | VCBO | V | 60 | |
| VCEO | V | 40 | ||
| VEBO | V | 6.0 | ||
| IC | mA | Continuous | 200 | |
| PD (*) | mW | Ta=25 | 300 | |
| Thermal Resistance | RthJA (*) | K/W | 357 | |
| Junction Temperature | Tj | -55 to +150 | ||
| Storage Temperature | TSTG | -55 to +150 | ||
| Electrical Characteristics | V(BR)CEO | Vdc | IC =1.0mAdc,IB=0 | 40 |
| V(BR)CBO | Vdc | IC=10uAdc,IE=0 | 60 | |
| V(BR)EBO | Vdc | IE=10Adc,IC=0 | 6.0 | |
| ICBO | nAdc | VCB=60Vdc, IE =0 | 50 | |
| ICEX | nAdc | VCE=30VdcC, VEB=3.0Vdc | 50 | |
| DC current gain | hFE | VCE=1Vdc,IC=0.1mAdc | 40 | |
| hFE | VCE=1Vdc,IC=1.0mAdc | 70 | ||
| hFE | VCE=1Vdc,IC=10mAdc | 100 - 300 | ||
| hFE | VCE=1Vdc,IC=50mAdc | 60 | ||
| hFE | VCE=1Vdc,IC=100mAdc | 30 | ||
| Collector-emitter saturation voltage | VCE(sat) | Vdc | IC=10mAdc,IB=1.0mAdc | 0.2 |
| VCE(sat) | Vdc | IC=50mAdc,IB=5.0mAdc | 0.3 | |
| Base-emitter saturation voltage | VBE(sat) | Vdc | IC=10mAdc,IB=1.0mAdc | 0.65 - 0.85 |
| VBE(sat) | Vdc | IC=50mAdc,IB=5.0mAdc | 0.95 | |
| Output Capacitance | Cobo | pF | VCB=5.0Vdc,f=1.0MHz,IE=0 | 4.0 |
| Input Capacitance | Cibo | pF | VEB=0.5Vdc,f=1.0MHz,IC=0 | 8.0 |
| Delay time | td | ns | VCC=3.0Vdc, VBE=0.5Vdc, IC=10mAdc,IB1=1.0mAdc | 35 |
| Rise time | tr | ns | VCC=3.0Vdc, VBE=0.5Vdc, IC=10mAdc,IB1=1.0mAdc | 35 |
| Storage time | ts | ns | VCC=3.0Vdc, IC=10mAdc,IB1=IB2=1.0mAdc | 200 |
| Fall time | tf | ns | VCC=3.0Vdc, IC=10mAdc,IB1=IB2=1.0mAdc | 50 |
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