NPN transistor YANGJIE MMST3904Q featuring AEC Q101 qualification and UL 94 V 0 flammability rating
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Product Description
Product Overview
The MMST3904Q is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a high conductance and is AEC-Q101 qualified. The epoxy meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. This device is designed for general-purpose amplification.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China (implied by company location)
- Certifications: RoHS, AEC-Q101 qualified
- Flammability Rating: UL-94 V-0
- Halogen Free: Yes
- Moisture Sensitivity Level: 1
- Part Number Suffix 'Q': AEC-Q101 qualified
Technical Specifications
| Item | Symbol | Unit | Conditions | Min | Max |
| Collector-Base Voltage | VCBO | V | 60 | ||
| Collector-Emitter Voltage | VCEO | V | 40 | ||
| Emitter-Base Voltage | VEBO | V | 6.0 | ||
| Collector Current -Continuous | IC | mA | 200 | ||
| Total Device Dissipation | PD | mW | (*) | 200 | |
| Thermal Resistance Junction to Ambient | RthJA | K/W | (*) | 625 | |
| Junction Temperature | Tj | -55 | +150 | ||
| Storage Temperature | TSTG | -55 | +150 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | Vdc | IC =1.0mAdc,IB=0 | 40 | |
| Collector-base breakdown voltage | V(BR)CBO | Vdc | IC=10uAdc,IE=0 | 60 | |
| Emitter-base breakdown voltage | V(BR)EBO | Vdc | IE=10Adc,IC=0 | 6.0 | |
| Collector cut-off current | ICBO | nAdc | VCB=30Vdc, IE =0 | 100 | |
| Collector cut-off current | ICEX | nAdc | VCE=30VdcC, VEB=3.0Vdc | 50 | |
| DC current gain | hFE | VCE=1Vdc,IC=0.1mAdc | 40 | ||
| DC current gain | hFE | VCE=1Vdc,IC=1.0mAdc | 70 | ||
| DC current gain | hFE | VCE=1Vdc,IC=10mAdc | 100 | 300 | |
| DC current gain | hFE | VCE=1Vdc,IC=50mAdc | 60 | ||
| DC current gain | hFE | VCE=1Vdc,IC=100mAdc | 30 | ||
| Collector-emitter saturation voltage | VCE(sat) | Vdc | IC=10mAdc,IB=1.0mAdc | 0.2 | |
| Collector-emitter saturation voltage | VCE(sat) | Vdc | IC=50mAdc,IB=5.0mAdc | 0.3 | |
| Base-emitter saturation voltage | VBE(sat) | Vdc | IC=10mAdc,IB=1.0mAdc | 0.65 | 0.85 |
| Base-emitter saturation voltage | VBE(sat) | Vdc | IC=50mAdc,IB=5.0mAdc | 0.95 | |
| Transition frequency | fT | MHz | VCE=20V,IC=10mA,f=100MHz | 250 | |
| Delay time | td | ns | VCC=3.0Vdc, VBE=0.5Vdc, IC=10mAdc,IB1=1.0mAdc | 35 | |
| Rise time | tr | ns | 35 | ||
| Storage time | ts | ns | VCC=3.0Vdc, IC=10mAdc,IB1=IB2=1.0mAdc | 200 | |
| Fall time | tf | ns | 50 |
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