NPN PNP digital transistor YANGJIE UMD3NQ designed for compact inverter circuits and load switching

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Product Description

Product Overview

The UMD3NQ is a series of NPN+PNP digital transistors from Yangzhou Yangjie Electronic Technology Co., Ltd., featuring built-in resistors. These transistors simplify circuit design by enabling the configuration of inverter circuits without external input resistors, reducing board space and component count. They are suitable for applications such as IC input control, switching loads, and digital systems.

Product Attributes

Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
Product Series: UMD3NQ
Certifications: AEC-Q101 qualified (suffix "Q"), RoHS compliant
Flammability Rating: UL-94 V-0
Moisture Sensitivity Level: 1
Package: SOT-363
Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
Marking: D3

Technical Specifications

Item	Symbol	Unit	Conditions	Min	Typ	Max
DTR1-NPN
Collector-Emitter Voltage	VCEO	V				50
Collector-Base Voltage	VCBO	V				50
Emitter-Base Voltage	VEBO	V				10
Supply Voltage	VCC	V				50
Input Voltage	VIN	V		-10		+40
Collector Current	IC	mA				100
Power Dissipation	PD	mW	(*) Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch			150
Junction Temperature	Tj					150
Storage Temperature	TSTG			-55		150
Input voltage (off)	VI(off)	V	VCC=5V, IO=100uA	0.5		-
Input voltage (on)	VI(on)	V	VO=0.3V, IO=10mA	-		3
Output voltage (on)	Vo(on)	V	IO=10mA, II=0.5 mA	-		0.3
Input current	II	mA	VI=5V	-		0.88
Output current (off)	IO(off)	uA	VCC=50V, VI=0	-		0.5
DC current gain	GI		Vo=5V, Io=5mA	30	-	-
Input resistance	R1	k		7	10	13
Resistance ratio	R2/R1			0.8	1	1.2
Transition frequency	fT	MHz	VCE=10V, IE=5mA, f=100MHz	-	250	-
DTR2-PNP
Collector-Emitter Voltage	VCEO	V				-50
Collector-Base Voltage	VCBO	V				-50
Emitter-Base Voltage	VEBO	V				-10
Supply Voltage	VCC	V				-50
Input Voltage	VIN	V		-40		+10
Collector Current	IC	mA				-100
Power Dissipation	PD	mW	(*) Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch			150
Junction Temperature	Tj					150
Storage Temperature	TSTG			-55		150
Input voltage (off)	VI(off)	V	VCC= -5V,IO= -100uA	-0.5		-
Input voltage (on)	VI(on)	V	VO= -0.3V,IO= -10mA	-		-3
Output voltage (on)	Vo(on)	V	IO= -10mA/ II= -0.5 mA	-		-0.3
Input current	II	mA	VI=-5V	-		-0.88
Output current (off)	IO(off)	uA	VCC=-50V, VI=0	-		-0.5
DC current gain	GI		Vo= -5V, Io= -5mA	30	-	-
Input resistance	R1	k		7	10	13
Resistance ratio	R2/R1			0.8	1	1.2
Transition frequency	fT	MHz	VCE= -10V, IC= -5mA, f=100MHz	-	250	-