N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
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Product Description
Product Overview
The YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for DC-DC converters, power management functions, and industrial and motor drive applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJG70G06A
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V, TJ=25 | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V, TJ=55 | 5 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.2 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=20A | 5.3 | 7.5 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=10A | 6.9 | 9.5 | m | |
| Diode Forward Voltage | VSD | IS=20A,VGS=0V | 0.85 | 1.3 | V | |
| Maximum Body-Diode Continuous Current | IS | 70 | A | |||
| Input Capacitance | Ciss | VDS=35V,VGS=0V,f=1MHZ | 2000 | pF | ||
| Output Capacitance | Coss | VDS=35V,VGS=0V,f=1MHZ | 390 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=35V,VGS=0V,f=1MHZ | 13 | pF | ||
| Gate Resistance | Rg | f=1MHZ, Open drain | 1.6 | |||
| Total Gate Charge | Qg(10V) | VDS=30V,ID=20A | 34 | nC | ||
| Total Gate Charge | Qg(4.5V) | VDS=30V,ID=20A | 15.8 | nC | ||
| Gate-Source Charge | Qgs | VDS=30V,ID=20A | 7.8 | nC | ||
| Gate-Drain Charge | Qg d | VDS=30V,ID=20A | 5.2 | nC | ||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=200A/us | 36 | nC | ||
| Reverse Recovery Time | trr | IF=20A, di/dt=200A/us | 27 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=30V,ID=12A, RGEN=3 | 10 | ns | ||
| Turn-on Rise Time | tr | VGS=10V,VDD=30V,ID=12A, RGEN=3 | 36 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=30V,ID=12A, RGEN=3 | 30 | ns | ||
| Turn-off fall Time | tf | VGS=10V,VDD=30V,ID=12A, RGEN=3 | 57 | ns | ||
| Drain-source Voltage | VDS | 60 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | Tc=25, Silicon limited | 70 | A | ||
| Drain Current | ID | Tc=100, Silicon limited | 44 | A | ||
| Pulsed Drain Current | IDM | 210 | A | |||
| Avalanche energy | EAS | 162 | mJ | |||
| Total Power Dissipation | PD | Tc=25 | 70 | W | ||
| Total Power Dissipation | PD | Tc=100 | 28 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State, D | 40 | 55 | /W | |
| Thermal Resistance Junction-to-Ambient | RJA | t10S, D | 14 | 17 | /W | |
| Thermal Resistance Junction-to-Case | RJC | Steady-State | 1.3 | 1.8 | /W |
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