Complementary N Channel P Channel MOSFET YANGJIE YJS07NP03B for wireless charging and load switching

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Product Description

Product Overview

The YJS07NP03B is a complementary N-Channel and P-Channel MOSFET featuring Trench Power LV MOSFET technology for high density cell design, resulting in low RDS(ON) and high-speed switching. It is designed for applications requiring efficient power management, including wireless chargers and load switches. The product meets UL 94 V-0 flammability rating and is Halogen Free.

Product Attributes

Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
Model: YJS07NP03B
Certifications: RoHS COMPLIANT, UL 94 V-0 Flammability Rating, Halogen Free
Moisture Sensitivity Level: 3

Technical Specifications

Parameter	Symbol	NMOS (Typ)	PMOS (Typ)	Units
Product Summary
Drain-source Voltage	VDS	30	-30	V
Continuous Drain Current (TA=25)	ID	7	-7	A
RDS(ON) (at VGS=10V)	RDS(ON)	18m	20m	m
RDS(ON) (at VGS=4.5V)	RDS(ON)	30m	28m	m
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Drain-source Voltage	VDS	30	-30	V
Gate-source Voltage	VGS	20	20	V
Drain Current (TA=25)	ID	7	-7	A
Drain Current (TA=100)	ID	4.4	-4.4	A
Pulsed Drain Current	IDM	60	-100	A
Avalanche energy (NMOS: IAS=8.05A, PMOS: IAS=-13.3A)	EAS	16	44	mJ
Total Power Dissipation (TA=25)	PD	1.9	2.2	W
Total Power Dissipation (TA=100)	PD	0.75	0.9	W
Junction and Storage Temperature Range	TJ ,TSTG	-55+150
NMOS Electrical Characteristics (TJ=25 unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	30	-	V
Zero Gate Voltage Drain Current	IDSS	1	-	A
Gate-Body Leakage Current	IGSS	100	-	nA
Gate Threshold Voltage	VGS(th)	1.0 - 2.2	-	V
Static Drain-Source On-Resistance (VGS=10V, ID=7A)	RDS(on)	14 - 18	-	m
Static Drain-Source On-Resistance (VGS=4.5V, ID=5A)	RDS(on)	23 - 30	-	m
Diode Forward Voltage (IS=7A, VGS=0V)	VSD	0.85 - 1.2	-	V
Input Capacitance	Ciss	380	-	pF
Output Capacitance	Coss	75	-	pF
Reverse Transfer Capacitance	Crss	60	-	pF
Total Gate Charge (VGS=10V, VDS=15V, ID=7A)	Qg	12.5	-	nC
PMOS Electrical Characteristics (TJ=25 unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	-	-30	V
Zero Gate Voltage Drain Current	IDSS	-	-1	A
Gate-Body Leakage Current	IGSS	-	100	nA
Gate Threshold Voltage	VGS(th)	-	-1.0 - -2.5	V
Static Drain-Source On-Resistance (VGS=-10V, ID=-7A)	RDS(on)	-	15 - 20	m
Static Drain-Source On-Resistance (VGS=-4.5V, ID=-5A)	RDS(on)	-	20.5 - 28	m
Diode Forward Voltage (IS=-7A, VGS=0V)	VSD	-	-0.85 - -1.2	V
Input Capacitance	Ciss	-	1220	pF
Output Capacitance	Coss	-	170	pF
Reverse Transfer Capacitance	Crss	-	160	pF
Total Gate Charge (VGS=-10V, VDS=-15V, ID=-7A)	Qg	-	24	nC