Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
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Product Description
Product Overview
The YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation through its package. It is suitable for DC-DC converters, power management functions, and synchronous-rectification applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Product Code: YJG95G06B
- Certifications: RoHS COMPLIANT
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 2.0 | 2.8 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=20A | 2.25 | 2.9 | m | |
| Diode Forward Voltage | VSD | IS=20A,VGS=0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 95 | A | |||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=100KHZ | 5950 | pF | ||
| Output Capacitance | Coss | VDS=25V,VGS=0V,f=100KHZ | 1250 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f=100KHZ | 85 | pF | ||
| Total Gate Charge | Qg | VGS=10V,VDS=50V,ID=50A | 93 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V,VDS=50V,ID=50A | 17 | nC | ||
| Gate-Drain Charge | Qg | VGS=10V,VDS=50V,ID=50A | 14 | nC | ||
| Reverse Recovery Chrage | Qrr | IF=25A, di/dt=100A/us | 73 | nC | ||
| Reverse Recovery Time | trr | IF=25A, di/dt=100A/us | 68 | ns | ||
| Turn-on Delay Time | td(on) | VGS=10V,VDD=30V,ID=25A RGEN=2 | 22.5 | ns | ||
| Turn-on Rise Time | tr | VGS=10V,VDD=30V,ID=25A RGEN=2 | 6.7 | ns | ||
| Turn-off Delay Time | td(off) | VGS=10V,VDD=30V,ID=25A RGEN=2 | 80.3 | ns | ||
| Turn-off fall Time | tf | VGS=10V,VDD=30V,ID=25A RGEN=2 | 26.9 | ns | ||
| Drain-source Voltage | VDS | 60 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current Silicon limited | ID | 155 | A | |||
| Drain Current | ID | TC=25 | 95 | A | ||
| Drain Current | ID | TC=100 | 60 | A | ||
| Pulsed Drain Current | IDM | 390 | A | |||
| Avalanche energy | EAS | 500 | mJ | |||
| Total Power Dissipation | PD | 120 | W | |||
| Junction-to-Case Thermal Resistance | RJC | 1.04 | / W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 20 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 |
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