P Channel Enhancement Mode MOSFET YANGJIE YJQ55P02A for Load Switching and High Current Applications
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Product Description
Product Overview
The YJQ55P02A is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Trench Power LV MOSFET technology, it offers a high density cell design for low RDS(ON) and excellent heat dissipation. This transistor is suitable for high current load applications, load switching, hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS COMPLIANT
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | -20 | V | |||
| Gate-source Voltage | VGS | ±10 | V | |||
| Drain Current (TA=25) | ID | 55 | A | |||
| Drain Current (TA=100) | ID | 35 | A | |||
| Pulsed Drain Current | IDM | 160 | A | |||
| Single Pulse Avalanche Energy | EAS | 75 | mJ | |||
| Total Power Dissipation (TC=25) | PD | 38 | W | |||
| Total Power Dissipation (TA=25) | PD | 3.2 | W | |||
| Junction-to-Case Thermal Resistance | RJC | 3.3 | ℃/W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 39 | ℃/W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | ℃ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250µA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V,VGS=0V | 1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±10V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250µA | -0.4 | -0.62 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -4.5V, ID=-15A | 6.5 | 8.3 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -2.5V, ID=-10A | 8.0 | 10.0 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -1.8V, ID=-8.0A | 10.3 | 15 | mΩ | |
| Diode Forward Voltage | VSD | IS=-20A,VGS=0V | -0.7 | -1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | -55 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHZ | 6358 | pF | ||
| Output Capacitance | Coss | VDS=-10V,VGS=0V,f=1MHZ | 690 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-10V,VGS=0V,f=1MHZ | 477 | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=-10V,VDS=-15V,ID=-9.1A | 12.7 | nC | ||
| Gate-Source Charge | Qgs | VGS=-10V,VDS=-15V,ID=-9.1A | 21 | nC | ||
| Gate-Drain Charge | Qg d | VGS=-10V,VDS=-15V,ID=-9.1A | 149 | nC | ||
| Reverse Recovery Charge | Qrr | IF=-6A, di/dt=100A/us | 25.2 | nC | ||
| Reverse Recovery Time | trr | IF=-6A, di/dt=100A/us | 46 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=-10V,VDD=-15V, ID=-6A RGEN=2.5Ω | 11 | ns | ||
| Turn-on Rise Time | tr | VGS=-10V,VDD=-15V, ID=-6A RGEN=2.5Ω | 36 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=-10V,VDD=-15V, ID=-6A RGEN=2.5Ω | 182 | ns | ||
| Turn-off fall Time | tf | VGS=-10V,VDD=-15V, ID=-6A RGEN=2.5Ω | 191 | ns | ||
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