Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature

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Product Description

Product Overview

The YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking voltage, a fast intrinsic diode with low recovery current, and suitability for high-frequency operation. This product is halogen-free and RoHS compliant.

Product Attributes

Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
Model: YJD212040NCFG2
Origin: China
Material: Silicon Carbide
Certifications: RoHS COMPLIANT

Technical Specifications

Parameter	Symbol	Unit	Value	Test Conditions	Note
Maximum Ratings
Drain source voltage	VDS,max	V	1200	@ Tj=25C, VGS=0 V, ID=100uA
Gate source voltage	VGS,max	V	-8/+19	@ Tj=25C	Absolute maximum values
Gate source voltage	VGS,op	V	-4/+15	@ Tj=25C	Recommended operational values
Continuous drain current	ID	A	66	VGS=15V, Tc=25	Fig.18
Continuous drain current	ID	A	48	VGS=15V, Tc=100
Pulsed drain current	ID(pulsed)	A	120	Pulse width tp limited by Tj,max	Fig.23
Avalanche energy, Single Pulse	EAS	mJ	500	VDD=75V,L=10mH
Power Dissipation	PTOT	W	333	Tc=25C , Tj = 175	Fig.17
Power Dissipation	PTOT	W	144	Tc=110C, Tj = 175
Operating junction and Storage temperature range	Tj ,Tstg	C	-55 to +175
Soldering temperature	TL	C	260	1.6mm (0.063) from case for 10s
Mounting torque	TM	Nm	0.6	M3 screw	Maximum of mounting process: 3
Static Electrical Characteristics
Gate threshold voltage	VGS(th)	V	2.0 / 2.5 / 4.0	VDS=VGS, ID= 11.5mA	Fig.4, 11
Gate threshold voltage	VGS(th)	V	2.0	VDS=VGS, ID= 11.5mA, Tj=175
Drain source breakdown voltage	V(BR)DSS	V	1200	VGS=0, ID=100uA
Zero gate voltage drain current	IDSS	uA	1 / 50	VDS=1200V, VGS= 0V	Fig.16
Gate source leakage current	IGSS	nA	10 / 100	VGS= 15V, VDS=0V
Current drain source on-state resistance	RDS ON	m	33 / 44	VGS=15V, ID=40A	Fig.5, 6, 7
Current drain source on-state resistance	RDS ON	m	63	VGS=15V, ID=40A,Tj=175
Internal gate resistance	Rg		3.0 / 5.0	f=1MHz
Diode forward voltage	VSD	V	5.0	VGS=-4V, ISD=20A	Fig.8
Diode forward voltage	VSD	V	3.3	VGS=0V, ISD=20A Tj=175	Fig.9
Transconductance	gf	S	26 / 22	VDS=20V,ID=40A	Fig.4
Dynamic Electrical Characteristics
Input capacitance	Ciss	pF	3456	VDS=1000V, VGS=0V, Tj=25, f=100 kHz, VAC = 25mV	Fig.13, 14
Output capacitance	Coss	pF	127	VDS=1000V, VGS=0V, Tj=25, f=100 kHz, VAC = 25mV	Fig.13, 14
Reverse capacitance	Crss	pF	7.2	VDS=1000V, VGS=0V, Tj=25, f=100 kHz, VAC = 25mV	Fig.13, 14
Coss stored energy	Eoss	uJ	69	VDS=1000V, VGS=0V, Tj=25, f=100 kHz, VAC = 25mV	Fig.15
Gate source charge	Qgs	nC	39	VDS=800V, VGS=-4/15V, ID=40A	Fig.12
Gate drain charge	Qg d	nC	44	VDS=800V, VGS=-4/15V, ID=40A	Fig.12
Gate charge	Qg	nC	116	VDS=800V, VGS=-4/15V, ID=40A	Fig.12
Switching Characteristics
Turn on switching energy	Eon	uJ	80	VDD=800V, VGS=-4/+15V, ID=40A, Rg=2.5, L=65uH	Fig.21, 22
Turn off switching energy	Eoff	uJ	500	VDD=800V, VGS=-4/+15V, ID=40A, Rg=2.5, L=65uH	Fig.21, 22
Turn on delay time	td(on)	ns	23	VDD=800V, VGS=-4/+15V, ID=40A, Rg=2.5, L=65uH	Fig.21, 22
Rise time	tr	ns	20	VDD=800V, VGS=-4/+15V, ID=40A, Rg=2.5, L=65uH	Fig.21, 22
Turn off delay time	td(off)	ns	31	VDD=800V, VGS=-4/+15V, ID=40A, Rg=2.5, L=65uH	Fig.21, 22
Fall time	tf	ns	8	VDD=800V, VGS=-4/+15V, ID=40A, Rg=2.5, L=65uH	Fig.21, 22
Body diode characteristics
Diode forward voltage	VSD	V	5.0	VGS=-4V,ISD=20A	Fig.8
Diode forward voltage	VSD	V	3.3	VGS=0V, ISD=20A, Tj=175	Fig.9
Continuous diode forward current	IS	A	66	Tc=25	Note1
Reverse recovery time	trr	nS	27	VR=800V, VGS=-4V, ID=40A, di/dt=2250A/uS
Reverse recovery charge	Qrr	nC	478	VR=800V, VGS=-4V, ID=40A, di/dt=2250A/uS
Peak reverse recovery current	Irrm	A	27	VR=800V, VGS=-4V, ID=40A, di/dt=2250A/uS
Thermal Characteristics
Thermal resistance	RJ-C	C /W	0.45		Typ.