High Density Cell Design N Channel Enhancement Mode Transistor YANGJIE YJD120N04A for Power Electronics

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Product Description

Product Overview

The YJD120N04A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation due to its package design and a high-density cell design for low RDS(ON). This transistor is suitable for applications such as DC-DC Converters, power management functions, and backlighting.

Product Attributes

Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
Origin: China
Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
Drain-source Voltage	VDS				40	V
Gate-source Voltage	VGS				±20	V
Drain Current	ID	TC=25			120	A
Drain Current	ID	TC=100			76	A
Pulsed Drain Current	IDM				390	A
Total Power Dissipation	PD	@ TC=25 B			110	W
Total Power Dissipation	PD	@ TC=100 B			44	W
Total Power Dissipation	PD	@ TA=25 C			6.2	W
Single Pulse Avalanche Energy	EAS	D			272	mJ
Thermal Resistance Junction-to-Case	RJC				1.14	/ W
Thermal Resistance Junction-to-Ambient	RJA				20	/ W
Junction and Storage Temperature Range	TJ ,TSTG		-55		+150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS= 0V, ID=250A	40			V
Zero Gate Voltage Drain Current	IDSS	VDS=40V,VGS=0V			1	A
Gate-Body Leakage Current	IGSS	VGS= ±20V, VDS=0V			±100	nA
Gate Threshold Voltage	VGS(th)	VDS= VGS, ID=250A	1.0	1.5	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS= 10V, ID=15A		2.8	3.5	m
Static Drain-Source On-Resistance	RDS(ON)	VGS= 4.5V, ID=10A		4.0	4.8	m
Diode Forward Voltage	VSD	IS=15A,VGS=0V		0.80	1.2	V
Maximum Body-Diode Continuous Current	IS				120	A
Gate resistance	Rg	=1 MHz, Open drain			3.1
Dynamic Parameters
Input Capacitance	Ciss	VDS=20V,VGS=0V,f=1MHZ		4645		pF
Output Capacitance	Coss			436		pF
Reverse Transfer Capacitance	Crss			360		pF
Switching Parameters
Total Gate Charge	Qg(10V)	VGS=10V,VDS=20V,ID=20A		102		nC
Total Gate Charge	Qg(4.5V)			49		nC
Gate-Source Charge	Qgs			15.8		nC
Gate-Drain Charge	Qgd			21.9		nC
Reverse Recovery Charge	Qrr	IF=20A, di/dt=100A/us		7.4		nC
Reverse Recovery Time	trr			22.3		ns
Turn-on Delay Time	tD(on)	VGS=10V, VDD=20V , ID=20A RGEN=3		12		ns
Turn-on Rise Time	tr			54		ns
Turn-off Delay Time	tD(off)			120		ns
Turn-off fall Time	tf			80		ns