Power MOSFET YANGJIE YJG20N06A N Channel Transistor with Low On Resistance and Trench MV Technology
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Product Description
Product Overview
The YJG20N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation through its package design and a high-density cell design for low RDS(ON). This transistor is suitable for applications such as DC-DC converters, power management functions, and backlighting.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 60 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TC=25 | 20 | A | ||
| Drain Current | ID | TC=100 | 12.5 | A | ||
| Pulsed Drain Current | IDM | 60 | A | |||
| Total Power Dissipation | PD | @ TC=25 | 14 | W | ||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | |||
| Junction-to-Case Thermal Resistance | RθJC | 8.9 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250μA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250μA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=20A | 34 | 43 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=10A | 36 | 47 | mΩ | |
| Diode Forward Voltage | VSD | IS=10A,VGS=0V | 0.8 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 20 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHZ | 1018 | pF | ||
| Output Capacitance | Coss | 70 | pF | |||
| Reverse Transfer Capacitance | Crss | 62 | pF | |||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V,VDS=30V,ID=10A | 26 | nC | ||
| Gate-Source Charge | Qgs | 5.4 | ||||
| Gate-Drain Charge | Qg | 6.5 | ||||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=500A/us | 11.7 | |||
| Reverse Recovery Time | trr | 23 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=30V, ID=2A,RL=1Ω, RGEN=3Ω | 10 | |||
| Turn-on Rise Time | tr | 20 | ||||
| Turn-off Delay Time | tD(off) | 29 | ||||
| Turn-off fall Time | tf | 22 | ||||
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