IGBT discrete component YANGJIE DGF10N65CTL0 optimized for hard and soft switching in power electronics

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Product Description

Product Overview

The DGF10N65CTL0 is a high-speed, smooth switching IGBT discrete device designed for both hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This device is suitable for applications such as soft switching, air conditioning, and motor drive inverters.

Product Attributes

Brand: 21yangjie
Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Maximum Ratings
Collector-Emitter Breakdown Voltage	VCE				650	V
Collector Current, limited by Tjmax	IC	TC= 25C			20	A
Collector Current, limited by Tjmax	IC	TC= 100C			10	A
Diode Forward Current, limited by Tjmax	IF	TC= 25C			20	A
Diode Forward Current, limited by Tjmax	IF	TC= 100C			10	A
Continuous Gate-Emitter Voltage	VGE			20		V
Transient Gate-Emitter Voltage (tp10s,D<0.010)	VGE			30		V
Turn off Safe Operating Area		VCE600V, Tj 150C			40	A
Pulsed Collector Current, VGE=15V, tp limited by Tjmax	ICM				40	A
Short Circuit Withstand Time, VGE= 15V, VCE 400V	Tsc			5		s
Diode Pulsed Current, tp limited by Tjmax	IFpuls				40	A
Power Dissipation , Tj=175C,Tc=25C	Ptot				100	W
Electrical Characteristics of the IGBT
Static Collector-Emitter Breakdown Voltage	BVCES	VGE=0V, IC=250A	650	-	-	V
Gate Threshold Voltage	VGE(th)	VGE=VCE, IC=1mA	5.0	5.8	6.5	V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE=15V, IC=10A Tj=25C		1.40	-	V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE=15V, IC=10A Tj=125C		1.55	-	V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE=15V, IC=10A Tj=150C		1.60	1.70	V
Zero Gate Voltage Collector Current	ICES	VCE=650V, VGE=0V Tj= 25C		0.25	-	mA
Zero Gate Voltage Collector Current	ICES	VCE=650V, VGE=0V Tj=150C		1.00	-	mA
Gate-Emitter Leakage Current	IGES	VCE= 0V, VGE= 20V			200	nA
Input Capacitance	Cies	VCE= 25V, VGE= 0V, f = 1MHz		0.89	-	nF
Output capacitance	Coes			0.04	-	nF
Reverse Transfer Capacitance	Cres			0.01	-	nF
Gate Charge	QG	VCC=300V,IC=10A, VGE=15V		0.059	-	uC
Short circuit collector current	ICSC	VGE=15V,tSC5us VCC=400V, Tj,start=25C		110	-	A
Operating Junction Temperature	Tj		-40		+175	C
Storage Temperature	Ts		-55		+150	C
Soldering Temperature, wave soldering		1.6mm (0.063in.) from case for 10s			260	C
Electrical Characteristics of the Diode
Diode Forward Voltage	VF	IF= 10A Tj= 25C		1.70	2.20	V
Diode Forward Voltage	VF	IF= 10A Tj= 125C		1.50	-	V
Diode Forward Voltage	VF	IF= 10A Tj= 150C		1.40	-	V
Switching Characteristic, Inductive Load
Turn-on Delay Time	td(on)	Tj=25C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		10	-	ns
Rise Time	tr	Tj=25C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		26	-	ns
Turn-on Energy	Eon	Tj=25C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		0.36	-	mJ
Turn-off Delay Time	td(off)	Tj=25C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		68	-	ns
Fall Time	tf	Tj=25C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		135	-	ns
Turn-off Energy	Eoff	Tj=25C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		0.17	-	mJ
Turn-on Delay Time	td(on)	Tj=125C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		14	-	ns
Rise Time	tr	Tj=125C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		35	-	ns
Turn-on Energy	Eon	Tj=125C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		0.42	-	mJ
Turn-off Delay Time	td(off)	Tj=125C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		68	-	ns
Fall Time	tf	Tj=125C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		162	-	ns
Turn-off Energy	Eoff	Tj=125C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		0.29	-	mJ
Turn-on Delay Time	td(on)	Tj=150C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		16	-	ns
Rise Time	tr	Tj=150C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		41	-	ns
Turn-on Energy	Eon	Tj=150C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		0.46	-	mJ
Turn-off Delay Time	td(off)	Tj=150C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		69	-	ns
Fall Time	tf	Tj=150C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		181	-	ns
Turn-off Energy	Eoff	Tj=150C VCC= 300V, IC=10A, VGE=-5V~15V, Rg=51		0.33	-	mJ
Electrical Characteristics of the DIODE
Reverse Recovery Current	Irr	IF=10A, VR=300V, -di/dt= 400A/s, Tj= 25		9	-	A
Reverse Recovery Charge	Qrr	IF=10A, VR=300V, -di/dt= 400A/s, Tj= 25		0.16	-	uC
Reverse Recovery Energy	Erec	IF=10A, VR=300V, -di/dt= 400A/s, Tj= 25		0.05	-	mJ
Reverse Recovery Current	Irr	IF=10A, VR=300V, -di/dt= 400A/s, Tj= 125		12	-	A
Reverse Recovery Charge	Qrr	IF=10A, VR=300V, -di/dt= 400A/s, Tj= 125		0.63	-	uC
Reverse Recovery Energy	Erec	IF=10A, VR=300V, -di/dt= 400A/s, Tj= 125		0.16	-	mJ
Reverse Recovery Current	Irr	IF=10A, VR=300V, -di/dt= 400A/s, Tj= 150		14	-	A
Reverse Recovery Charge	Qrr	IF=10A, VR=300V, -di/dt= 400A/s, Tj= 150		0.85	-	uC
Reverse Recovery Energy	Erec	IF=10A, VR=300V, -di/dt= 400A/s, Tj= 150		0.19	-	mJ
Thermal Resistance
IGBT Thermal Resistance, Junction - Case	Rth(j-c)				4.8	K/W
Diode Thermal Resistance, Junction - Case	Rth(j-c)				6.0	K/W
Thermal Resistance, Junction - Ambient	Rth(j-a)				60	K/W