Plastic encapsulated PNP transistor YONGYUTAI S8550 ideal for in diverse electronic circuit projects

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Product Description

Product Overview

The S8550 is a PNP transistor in a TO-92 plastic-encapsulated package, designed for general-purpose applications. It features excellent hFE linearity.

Product Attributes

Material: Plastic-Encapsulate
Type: PNP Transistors

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
VCBO	Collector Base Voltage				-40	V
VCEO	Collector Emitter Voltage				-25	V
VEBO	Emitter Base Voltage				-5	V
IC	Collector Current				-500	mA
PC	Collector Power Dissipation	(Ta=25C unless otherwise noted)			625	mW
Tj	Junction Temperature				150	C
Tstg	Storage Temperature		-55		+150	C
V(BR)CBO	Collector-base breakdown voltage	IC=-100A,IE=0	-40			V
V(BR)CEO	Collector-emitter breakdown voltage	IC=-1mA,IB=0	-25			V
V(BR)EBO	Emitter-base breakdown voltage	IE=-100A,IC=0	-5			V
ICBO	Collector cut-off current	VCB=-40V,IE=0			-100	nA
ICEO	Collector cut-off current	VCE=-20V,IB=0			-100	nA
IEBO	Emitter cut-off current	VEB=-3V,IC=0			-100	nA
hFE(1)	DC current gain	VCE=-5V, IC=-1mA	200	300
hFE(2)	DC current gain	VCE=-5V, IC=-10mA	150
VCE(sat)	Collector-emitter saturation voltage	IC=-500mA,IB=-50mA			-0.6	V
VBE(sat)	Base-emitter saturation voltage	IC=-500mA,IB=-50mA			-1.2	V
fT	Transition frequency	VCE=-6V,IC=-20mA,f=30MHz		150		MHz