Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits

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Product Description

Product Overview

This series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply and rectification circuits.

Product Attributes

Brand: (Not specified)
Origin: (Not specified)
Material: Glass Passivated Chip
Color: (Not specified)
Certifications: MIL-STD-750 (Terminals solderable)

Technical Specifications

Model	Maximum Repetitive Peak Reverse Voltage (VRRM)	Maximum RMS Voltage (VRMS)	Maximum DC Blocking Voltage (VDC)	Maximum Forward Current (IO)	Peak Forward Surge Current (IFSM)	Maximum Forward Voltage (VF) @ 1.0A	Maximum DC Reverse Current (IR) @ Rated DC Blocking Voltage	Typical Junction Capacitance (Cj)	Operating & Storage Temperature (Tj, Tstg)	Typical Thermal Resistance (RJA)
MB1S	100 V	70 V	100 V	0.8 A	35 A	1.1 V	5 A (@Tj=25C), 40 A (@Tj=125C)	(See Fig.4)	-55 ~ +150 C	(See Note 2)
MB2S	200 V	140 V	200 V	0.8 A	35 A	1.1 V	5 A (@Tj=25C), 40 A (@Tj=125C)	(See Fig.4)	-55 ~ +150 C	(See Note 2)
MB4S	400 V	280 V	400 V	0.8 A	35 A	1.1 V	5 A (@Tj=25C), 40 A (@Tj=125C)	(See Fig.4)	-55 ~ +150 C	(See Note 2)
MB6S	600 V	420 V	600 V	0.8 A	35 A	1.1 V	5 A (@Tj=25C), 40 A (@Tj=125C)	(See Fig.4)	-55 ~ +150 C	(See Note 2)
MB8S	800 V	560 V	800 V	0.8 A	35 A	1.1 V	5 A (@Tj=25C), 40 A (@Tj=125C)	(See Fig.4)	-55 ~ +150 C	(See Note 2)
MB10S	1000 V	700 V	1000 V	0.8 A	35 A	1.1 V	5 A (@Tj=25C), 40 A (@Tj=125C)	(See Fig.4)	-55 ~ +150 C	(See Note 2)