Slkor UMC3N

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The DTA114E and DTC114E transistors are NPN and PNP digital transistors respectively, built into a single package. They are ideal for power switch circuits, offering the advantage of cutting mounting cost and area in half. These devices are suitable for various applications requiring compact and efficient switching solutions.

Marking

Package Type

SOT-353

Transistor Type

Dual Digital Transistors (NPN+PNP)

Model Series

UMC3N

Technical Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Input voltage (OFF)	VI(off)			0.5	V	VCC=5V ,IO=100A
Input voltage (ON)	VI(on)	3			V	VO=0.3V ,IO=10mA
Output voltage (ON)	VO(on)		0.3		V	IO/II=10mA/0.5mA
Input current	II			0.88	mA	VI=5V
Output current (OFF)	IO(off)			0.5	A	VCC=50V, VI=0
DC current gain	GI	30				VO=5V,IO=5mA
Input resistance	R1	7	10	13	k
Resistance ratio	R2/R1	0.8	1	1.2
Transition frequency	fT		250		MHz	VCE=10V ,IE=-5mA,f=100MHz

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Input voltage (OFF)	VI(off)			-0.5	V	VCC=-5V ,IO=-100A
Input voltage (ON)	VI(on)	-3			V	VO=-0.3V ,IO=-10mA
Output voltage (ON)	VO(on)		-0.3		V	IO/II=-10mA/-0.5mA
Input current	II			-0.88	mA	VI=-5V
Output current (OFF)	IO(off)			-0.5	A	VCC=-50V, VI=0
DC current gain	GI	30				VO=-5V,IO=-5mA
Input resistance	R1	7	10	13	k
Resistance ratio	R2/R1	0.8	1	1.2
Transition frequency	fT		250		MHz	VCE=-10V ,IE=5mA,f=100MHz

Parameter	Symbol	Limits	Unit
Supply voltage	VCC	50	V
Input voltage	VIN	-10~+40	V
Output current	IO (ICM)	100	mA
Power dissipation	PD	150	mW
Junction temperature	Tj	150
Storage temperature	Tstg	-55~150

Parameter	Symbol	Limits	Unit
Supply voltage	VCC	-50	V
Input voltage	VIN	-40~+10	V
Output current	IO (ICM)	-100	mA
Power dissipation	PD	150	mW
Junction temperature	Tj	150
Storage temperature	Tstg	-55~150