Slkor MMUN2211
Product Overview
This series of NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network (BRT) is designed to replace a single device and its external resistor bias network. Each BRT integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration eliminates the need for individual components, reducing system cost and board space. The devices are housed in the SOT-23 package, suitable for low power surface mount applications. The SOT-23 package features modified gull-winged leads that absorb thermal stress during soldering, preventing damage to the die. These devices are available on 8 mm embossed tape and reel.
Advantages
- Simplifies Circuit Design
- Reduces Board Space and Component Count
Application Scenarios
Low power surface mount applications.
Brand
Not explicitly stated, but implied by URL.
Package Type
SOT-23
Transistor Type
NPN Silicon
Network Configuration
Monolithic Bias Resistor Network (BRT)
Resistor Network Components
Series base resistor, Base-emitter resistor
Mounting Type
Surface Mount
Reel Packaging
8 mm embossed tape and reel
| Device Marking | R1 (K) | R2 (K) | Collector-Emitter Breakdown Voltage (V(BR)CEO) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (VCE(sat)) | Input Resistor (R1) | Resistor Ratio (R1/R2) |
|---|---|---|---|---|---|---|---|
| MMUN2211 (A8A) | 10 | 10 | 50 Vdc | 35-100 | - 0.25 Vdc | 7.0 k | 1.0 |
| MMUN2212 (A8B) | 22 | 22 | 50 Vdc | 60-160 | - 0.25 Vdc | 15.4 k | 1.0 |
| MMUN2213 (A8C) | 47 | 47 | 50 Vdc | 80-200 | - 0.25 Vdc | 32.9 k | 1.0 |
| MMUN2214 (A8D) | 10 | 47 | 50 Vdc | 80-200 | - 0.25 Vdc | 7.0 k | 0.21 |
| MMUN2215 (A8E) | 10 | 50 Vdc | 160-350 | - 0.25 Vdc | 7.0 k | 0.1 | |
| MMUN2216 (A8F) | 4.7 | 50 Vdc | 160-350 | - 0.25 Vdc | 3.3 k | 0.1 | |
| MMUN2230 (A8G) | 1.0 | 1.0 | 50 Vdc | 3.0-5.0 | - 0.25 Vdc | 0.7 k | 1.0 |
| MMUN2231 (A8H) | 2.2 | 2.2 | 50 Vdc | 8.0-15 | - 0.25 Vdc | 1.5 k | 1.0 |
| MMUN2232 (A8J) | 4.7 | 4.7 | 50 Vdc | 15-30 | - 0.25 Vdc | 3.3 k | 1.0 |
| MMUN2233 (A8K) | 4.7 | 47 | 50 Vdc | 80-200 | - 0.25 Vdc | 3.3 k | 0.1 |
| MMUN2234 (A8L) | 22 | 47 | 50 Vdc | 80-200 | - 0.25 Vdc | 15.4 k | 0.47 |
| MMUN2235 (A8M) | 2.2 | 47 | 50 Vdc | 80-200 | - 0.25 Vdc | 2.2 k | 0.047 |
| MMUN2238 (A8R) | 2.2 | 50 Vdc | 160-350 | - 0.25 Vdc | 2.2 k | 0.185 | |
| MMUN2241 (A8U) | 100 | 50 Vdc | 160-350 | - 0.25 Vdc | 70 k | 0.056 |
| Characteristic | Symbol | Min | Typ | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.5 | mAdc | VEB = 6.0 V, IC = 0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 |
| Collector-Emitter Voltage | VCEO | 50 | - | - | Vdc | Note 2. |
| Collector Current | IC | - | - | 100 | mAdc | |
| Total Power Dissipation @ TA = 25C | PD | - | 200 | - | mW | Note 1. |
| Derate above 25C | - | 1.6 | - | mW/C | ||
| Operating and Storage Temperature Range | TJ, Tstg | -65 | - | 150 | C | |
| Maximum Temperature for Soldering Purposes | TL | - | 260 | - | C Sec | Time in Solder Bath |
| Thermal Resistance Junction-to-Ambient (surface mounted) | RJA | - | 625 | - | C/W | |
| Output Voltage (on) | VOL | - | - | 0.2 | Vdc | VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k (and other conditions) |
| Output Voltage (off) | VOH | 4.9 | - | - | Vdc | VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k (and other conditions) |
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