Slkor SL20T65FL
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
- Features: Low gate charge, Trench FS Technology, saturation voltage: VCE(sat), typ =1.6V, IC=20A and TC =25C, RoHS product.
- Applications: General purpose inverters, UPS.
Brand
SLKOR
Certifications
RoHS
Package Types
TO-220F, TO-220, TO-263, TO-247
| Parameter | Symbol / Unit | Tests conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Collector-Emmiter Voltage | Vces | 650 | V | |||
| Collector Current-continuous (T=25) | Ic | 40 | A | |||
| Collector Current-continuous (T=100) | Ic | 20 | A | |||
| Collector Current-pulse (note 1) | ICM | 80 | A | |||
| Diode RMS forward current (T=25) | IF | 40 | A | |||
| Diode RMS forward current (T=100) | IF | 20 | A | |||
| Gate-Emmiter Voltage | VGES | 20 | V | |||
| Surge non repetitive forward current (tp=10ms sinusoidal) | IFSM | 80 | A | |||
| Power Dissipation (TC=25) | PD | 156 | 162 | W | ||
| Diode Forward Current (TC=100) | PD | 20 | A | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Operating Temperature Range | TJ | -55 | +175 | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||
| Breakdown Voltage | BVCES | IC=500A,VGE=0V | 650 | V | ||
| Breakdown Voltage Temperature Coefficient | BVCES/TJ | IC=1mA,referenced to 25 | -0.5 | V/ | ||
| Zero Gate Voltage Collector Current | ICES | VCE=650V,VGE=0V, TC=25 | 10 | A | ||
| Gate-body leakage current | IGES | VCE=0V,VGE=20V | 200 | nA | ||
| Gate-Emmiter Threshold Voltage | VGE(th) | VCE=VGE, lc=250uA | 4.5 | 6.5 | V | |
| Collector-Emitter saturation Voltage (VGE=15V,IC=20A, TC=25) | VCESAT | 1.6 | 2.0 | V | ||
| Collector-Emitter saturation Voltage (Tc=125) | VCESAT | VGE=15V,IC=20A | 1.75 | 2.15 | V | |
| Collector-Emitter saturation Voltage (TC=175) | VCESAT | VGE=15V,IC=20A | 1.9 | 2.3 | V | |
| Short Collector current (Note 2) | Ic(sc) | VGE=15V, VCE=360V, tsc | 116.7 | A | ||
| Input capacitance | Cies | VCE=25V, VGE=0V, f=1.0MHZ, Tc=25 | 1500 | pF | ||
| Output capacitance | Coes | VCE=25V, VGE=0V, f=1.0MHZ, Tc=25 | 128 | pF | ||
| Reverse transfer capacitance | Cres | VCE=25V, VGE=0V, f=1.0MHZ, Tc=25 | 28.7 | pF | ||
| Turn-On delay time (Tc=25) | td(on) | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 16 | ns | ||
| Turn-On rise time (Tc=25) | tr | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 56 | ns | ||
| Turn-off delay time (Tc=25) | td(off) | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 52 | ns | ||
| Turn-off Fall time (Tc=25) | tf | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 82 | ns | ||
| Turn-on energy (Tc=25) | Eon | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 0.79 | mJ | ||
| Turn-off energy (Tc=25) | Eoff | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 0.3 | mJ | ||
| Total switching Energy (Tc=25) | Etotal | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 1.09 | mJ | ||
| Turn-On delay time (Tc=175) | td(on) | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 14 | ns | ||
| Turn-On rise time (Tc=175) | tr | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 54 | ns | ||
| Turn-off delay time (Tc=175) | td(off) | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 76 | ns | ||
| Turn-off Fall time (Tc=175) | tf | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 146 | ns | ||
| Turn-on energy (Tc=175) | Eon | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 0.8 | mJ | ||
| Turn-off energy (Tc=175) | Eoff | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 0.49 | mJ | ||
| Total switching Energy (Tc=175) | Etotal | VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load | 1.3 | mJ | ||
| Total Gate Charge | Qg | VCE=400V,Ic=20A RG=10,VGE=15V TC=25(note3,4) | 43.9 | nC | ||
| Gate to emitter charge | Qge | VCE=400V,Ic=20A RG=10,VGE=15V TC=25(note3,4) | 10.0 | |||
| Gate to collector charge | Qgc | VCE=400V,Ic=20A RG=10,VGE=15V TC=25(note3,4) | 18.9 | |||
| Gate resistance | Rg | f=1MHz,open collector | 1.8 | |||
| Diode Forward Voltage (TC=25) | VF | VGE=0V,IF=20A | 1.4 | V | ||
| Diode Forward Voltage (TC=125) | VF | VGE=0V,IF=20A | 1.2 | V | ||
| Diode Forward Voltage (TC=175) | VF | VGE=0V,IF=20A | 1.0 | V | ||
| Diode Reverse recovery time (TC=25) | trr | VGE=0V, IF=20A dl=/dt=100A/us (note 4) | 254 | ns | ||
| Reverse recovery charge (TC=25) | Qrr | VGE=0V, IF=20A dl=/dt=100A/us (note 4) | 347 | nC | ||
| Diode Reverse recovery Current (TC=25) | Irrm | VGE=0V, IF=20A dl=/dt=100A/us (note 4) | 2.7 | A | ||
| Diode Reverse recovery time (TC=175) | trr | VGE=0V, IF=20A dl=/dt=100A/us (note 4) | 429 | ns | ||
| Reverse recovery charge (TC=175) | Qrr | VGE=0V, IF=20A dl=/dt=100A/us (note 4) | 1010 | nC | ||
| Diode Reverse recovery Current (TC=175) | Irrm | VGE=0V, IF=20A dl=/dt=100A/us (note 4) | 4 | A | ||
| IGBT Thermal Resistance, Junction to Case | Rth(j-c) | 0.77 | /W | |||
| FRD Thermal Resistance, Junction to Case | Rth(j-c) | 2.05 | /W | |||
| Thermal Resistance, Junction to Ambitent | Rth(j-A) | 33.8 | 62.5 | /W |
| Order codes | Package | Packaging |
|---|---|---|
| SL20T65F | TO-220F | Tube |
| SL20T65 | TO-220 | Tube |
| SL20T65FZ | TO-263 | Tube |
| SL20T65FL | TO-247 | Tube |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina