Slkor SL40T120FL

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

Function: This product is a semiconductor component designed for general-purpose inverters and UPS applications. It features low gate charge and Trench FS Technology, offering a saturation voltage of VCE(sat) = 1.8V @ IC = 40A. It is RoHS compliant.

Applications: General purpose inverters, UPS.

Product Attributes

Brand

SLKOR

Package Type

TO-247

Certifications

RoHS Complaint

Parameter	Symbol	Test Conditions	Min	Type	Max	Unit
Collector to Emitter Breakdown Voltage	BVCES	VGE = 0V, IC = 250	1200	-	-	V
Breakdown Voltage Temperature Coefficient	BVCES/ TJ	IC=0.5mA, referenced to 25	-	-0.6	-	V/
Zero Gate Voltage Collector Current	ICES	VCE=1200V, VGE=0V, TC=25	-	-	0.2	mA
Zero Gate Voltage Collector Current	ICES	VCE=1200V, VGE=0V, TC=175	-	-	2	mA
Gate-body leakage current, forward	IGESF	VCE=0V, VGE =20V	-	-	200	nA
Gate-body leakage current, reverse	IGESR	VCE=0V, VGE =-20V	-	-	-200	nA
Gate Threshold Voltage	VTH	VCE =VGE , IC=250A	4.5	-	6.5	V
Collector-Emmiter saturation Voltage	VCESAT	VGE=15V IC=40A Tc=25	-	1.8	2.0	V
Collector-Emmiter saturation Voltage	VCESAT	VGE=15V IC=40A Tc=175	-	2.4	-	V
Input Capacitance	Cies	VCE = 25V, VGE = 0V f = 1MHz	-	4604	-	pF
Output Capacitance	Coes	VCE = 25V, VGE = 0V f = 1MHz	-	200	-	pF
Reverse Transfer Capacitance	Cres	VCE = 25V, VGE = 0V f = 1MHz	-	49	-	pF
Turn-On Delay Time	td(on	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=25	-	56	-	nS
Rise Time	tr	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=25	-	98	-	nS
Turn-Off Delay Time	td(off)	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=25	-	208	-	nS
Fall Time	tf	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=25	-	176	-	nS
Turn-On Energy	Eon	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=25	-	2.10	-	mJ
Turn-off Energy	Eoff	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=25	-	2.28	-	mJ
Total Switching Energy	Etot	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=25	-	4.38	-	mJ
Turn-On Delay Time	td(on	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=175	-	50	-	nS
Rise Time	tr	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=175	-	98	-	nS
Turn-Off Delay Time	td(off)	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=175	-	252	-	nS
Fall Time	tf	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=175	-	322	-	nS
Turn-On Energy	Eon	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=175	-	2.24	-	mJ
Turn-off Energy	Eoff	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=175	-	3.48	-	mJ
Total Switching Energy	Etot	VCC = 600V, IC = 40A, RG = 12, VGE = 15V, Parasitic ductance = 75nH TC=175	-	5.72	-	mJ
Total Gate Charge	Qg	VCC = 960V, IC = 40A, VGE = 15V	-	165	-	nC
Gate to Emitter Charge	Qge	VCC = 960V, IC = 40A, VGE = 15V	-	46	-	nC
Gate to Collector Charge	Qgc	VCC = 960V, IC = 40A, VGE = 15V	-	69	-	nC
Diode Forward Voltage	VFM	IF = 40A	-	2.3	3.0	V
Diode Reverse Recovery Time	trr	IF =40A, diF/dt = 200A/s TC=25	-	376	-	ns
Diode Reverse Recovery Time	trr	IF =40A, diF/dt = 200A/s TC=125	-	618	-	ns
Diode Peak Reverse Recovery Current	Irr	TC=25	-	6.5	-	A
Diode Peak Reverse Recovery Current	Irr	TC=125	-	13.3	-	A
Diode Reverse Recovery Charge	Qrr	TC=25	-	1311	-	nC
Diode Reverse Recovery Charge	Qrr	TC=125	-	4283	-	nC