Slkor SL50T120FZ

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

Features: Extremely Efficient Trench with Field Stop Technology, TJmax =175C, Soft Fast Reverse Recovery Diode, Optimized for High Speed Switching, 10s Short Circuit Capability.
Applications: Solar Inverter, UPS.

Brand

SLKORMicro

Model

SL50T120FZ

Package Type

Standard

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCES				1200	V
Collector Current-continuous (Tc=25)	Ic				100	A
Collector Current-continuous (Tc=100)	Ic				50	A
Collector Current-pulse	ICM	(note 1)			200	A
Diode Continuous forward current (Tc=100)	IF				50	A
Diode Maximum Forward Current	IFM	(Note 1)			200	A
Gate-Emitter Voltage	VGES			20		V
Short Circuit Withstand Time	tsc			10		us
Power Dissipation (Tc=25)	PD				535	W
Power Dissipation (Tc=100)	PD				267	W
Operating Temperature Range	TJ		-55		+175
Storage Temperature Range	TSTG		-55		+175
Maximum Lead Temperature for Soldering	TL				260
Collector-Emitter Voltage (Breakdown)	BVCES	IC=500A,VGE=0V	1200			V
Zero Gate Voltage Collector Current	ICES	VCE=1200V,VGE=0V			0.1	mA
Zero Gate Voltage Collector Current (Tc=175)	ICES	VCE=1200V,VGE=0V			2.0	mA
Gate-body leakage current	IGES	VCE=0V,VGE=20V			200	nA
Gate-Emitter Threshold Voltage	VGE(th)	VCE=VGE, lc=250uA	4.5	5.5	6.5	V
Collector-Emitter saturation Voltage (Tc=25)	VCESAT	VGE=15V,IC=50A			2.20	V
Collector-Emitter saturation Voltage (Tc=175)	VCESAT	VGE=15V, IC=50A			2.60	V
Input capacitance	Cies	VCE=20V, VGE=0V, f=1.0MHZ, Tc=25		7383		pF
Output capacitance	Coes	VCE=20V, VGE=0V, f=1.0MHZ, Tc=25		233		pF
Reverse transfer capacitance	Cres	VCE=20V, VGE=0V, f=1.0MHZ, Tc=25		139		pF
Total Gate Charge	Qg	VCE=600V,IC=50A, VGE=15V,TC=25C		311		nC
Gate to emitter charge	Qge	VCE=600V,IC=50A, VGE=15V,TC=25C		64
Gate to collector charge	Qgc	VCE=600V,IC=50A, VGE=15V,TC=25C		155
Turn-On delay time (Tc=25)	td(on)	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		118		ns
Turn-On rise time (Tc=25)	tr	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		48		ns
Turn-off delay time (Tc=25)	td(off)	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		282		ns
Turn-off Fall time (Tc=25)	tf	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		113		ns
Turn-on switching loss (Tc=25)	Eon	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		4.40		mJ
Turn-off switching loss (Tc=25)	Eoff	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		1.40		mJ
Total switching loss (Tc=25)	Ets	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		5.80		mJ
Turn-On delay time (Tc=175)	td(on)	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		114		ns
Turn-On rise time (Tc=175)	tr	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		49		ns
Turn-off delay time (Tc=175)	td(off)	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		298		ns
Turn-off Fall time (Tc=175)	tf	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		243		ns
Turn-on switching loss (Tc=175)	Eon	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		5.65		mJ
Turn-off switching loss (Tc=175)	Eoff	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		3.26		mJ
Total switching loss (Tc=175)	Ets	VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load		8.91		mJ
Diode Forward Voltage (Tc=25)	VF	VGE=0V,IF=50A		2.00	2.60	V
Diode Forward Voltage (Tc=175)	VF	VGE=0V,IF=50A		2.55		V
Diode Reverse recovery time (Tc=25)	trr	VR=400V,IF=50A dlF/dt=200A/us		256		ns
Diode Reverse recovery charge (Tc=25)	Qrr	VR=400V,IF=50A dlF/dt=200A/us		2.7		C
Diode Reverse recovery Current (Tc=25)	Irrm	VR=400V,IF=50A dlF/dt=200A/us		19		A
Diode Reverse recovery time (Tc=175)	trr	VR=400V,IF=50A dlF/dt=200A/us		400		ns
Diode Reverse recovery charge (Tc=175)	Qrr	VR=400V,IF=50A dlF/dt=200A/us		5.75		C
Diode Reverse recovery Current (Tc=175)	Irrm	VR=400V,IF=50A dlF/dt=200A/us		27		A
Thermal Resistance, Junction to case (IGBT)	Rth j-c				0.28	/W
Thermal Resistance, Junction to case (Diode)	Rth j-c				0.5	/W
Thermal Resistance, Junction to Ambient	Rth j-a				40	/W