Slkor 2P4M-SL

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Function: PNPN four-layer silicon unidirectional device. Gate sensitive trigger.

Advantages: P-type to through diffusion isolation; mesa glass passivation process; back multi-layer metal electrode; RoHS compliant.

Applications: Motorcycle igniters, gasoline engine igniters, LED light controllers.

Brand SLKOR

Product Name 2P4M-SL

Package Type TO-252

Certifications RoHS

Diode Type Unidirectional Thyristor Chip

Symbol	Parameter	Condition	Min	Typical	Max	Unit
IT(AV)	On-state average current			2		A
VDRM / VRRM	Repetitive peak off-state voltage			600/600		V
IGT	Gate trigger current	VD=6V, RL=100, RGK=1k	10		200	A
VGT	Gate trigger voltage	VD=12V, RL=100, RGK=1k			0.8	V
VGD	Gate non-trigger voltage	VD=1/2VDRM ,RGK=1k, Tj=110	0.2			V
IH	Holding current	VD=24V,RGK=1k,ITM=4A, Tj=25		1	3	mA
IL	Latching current	IG=1.2IGT			4	mA
dVD/dt	Critical rate of rise of off-state voltage	VD=2/3VDRM , RGK=1k,Tj=110	10			V/s
VTM	On-state voltage drop	ITM=4A			1.55	V
IDRM / IRRM	Repetitive peak off-state current	VD=VDRM/VRRM ,Tj=25			5	A
IDRM / IRRM	Repetitive peak off-state current	VD=VDRM/VRRM ,Tj=110			100	A
ITSM	Non-repetitive surge on-state current	Half sine wave, Tj (init)=25, tp=10ms			25	A
I2t	I2t value	Sinusoidal pulse, tp=10ms			1.7	A2s
dIT/dt	Critical rate of rise of on-state current	IG=2*IGT , tr10ns, F=120HZ , Tj=110		50		A/s
IGM	Peak gate current	tp=20s, Tj=110			0.3	A
PGM	Peak gate power	tp=20s, Tj=110			0.5	W
PG(AV)	Average gate power	Tj=110			0.1	W
TSTG	Storage temperature		-40		150
Tj	Operating junction temperature		-40		110
Rth(j-c)	Thermal resistance junction to case (AC)	TO-252			6.5	/W
Rth(j-a)	Thermal resistance junction to ambient	S=0.5cm2 TO-252			70	/W