Slkor BTB16-800B

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The BTA16/BTB16 Series are TRIACs designed for 3-quadrant and 4-quadrant applications. They are suitable for controlling AC power in various consumer electronics and industrial applications.

Key Features:

Repetitive Peak Off-State Voltage up to 1000V
RMS On-State Current of 16A
Gate Trigger Voltage (VGT) 1.5V
Available in 3 or 4 Quadrants
Multiple package options: TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263

Applications:

Washing machines, vacuum cleaners, massagers, solid-state relays, AC motor speed regulation, and more.

Brand

SLKOR Micro

Series

BTA16/BTB16

Type

TRIAC

Quadrants

3 Quadrants / 4 Quadrants

Package Types

TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263

Symbol	Parameter	Conditions	BTA16/BTB16-600	BTA16/BTB16-800	Unit
VDRM, VRRM	Repetitive Peak Off-State Voltage		800	1000	V
IT(RMS)	R.M.S On-State Current	Tc=110C	16	16	A
ITSM	Surge On-State Current	tp=10ms	170 / 180	170 / 180	A
It	It for fusing	tp=10ms	116	116	As
PG(AV)	Average Gate Power Dissipation	Tj=125C	1	1	W
IGM	Peak Gate Current	tp=20s, Tj=125C	4	4	A
Tj	Operating Junction Temperature		-40 ~ 125	-40 ~ 125	C
TSTG	Storage Temperature		-40 ~ 150	-40 ~ 150	C

Symbol	Parameter	Test Conditions	Value	Unit
IDRM	Repetitive Peak Off-State Current	Tj=25C	5	uA
IDRM	Repetitive Peak Off-State Current	Tc=125C	1	mA
IRRM	Repetitive Peak Reverse Current	Tc=25C	5	uA
IRRM	Repetitive Peak Reverse Current	Tc=125C	1	mA
VTM	Forward "on" voltage	IT=23A, tp=380s	1.5	V
VGT	Gate trigger voltage	VD=12V, RL=30	1.5	V
di/dt	Critical rate of rise of on-state current	I,II,III F=100Hz, IG=2xIGT, tr100ns	50	A/s
di/dt	Critical rate of rise of on-state current	IV	10	A/s
IGT	Gate trigger current	I,II,III VD=12V, RL=30	10 / 25 / 50 / 25 / 50	mA
IGT	Gate trigger current	IV	50 / 100	mA
IH	Holding current	IT=0.2A	25 / 35 / 50 / 25 / 50	mA
VGD	Gate non-trigger voltage	VD=VDRM, TJ=125C, RL=3.3K	0.2	V
dv/dt	Critical-rate of rise of commutation voltage	TJ=125C, VD=2/3VDRM, Gate	100 / 400 / 1000 / 200 / 400	V/s