SiC Substrate

High purity un-doped 4inch 4H-Semi silicon carbide sic wafers for optical lens or device Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES Product Name: Silicon carbide (SiC) crystal substrate Product Description: 2-6inch Technical parameters: Cell structure Hexagonal Lattice constant a = 3.08 Å c = 15.08 Å Priorities ABCACB (6H) Growth method MOCVD Direction Growth axis or Partial (0001) 3.5 ° Polishing Si surface polishing Bandgap 2

High purity un-doped 4inch 4H-Semi silicon carbide sic wafers for optical lens or device Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES Product Name: Silicon carbide (SiC) crystal substrate Product Description: 2-6inch Technical parameters: Cell structure Hexagonal Lattice constant a = 3.08 Å c = 15.08 Å Priorities ABCACB (6H) Growth method MOCVD Direction Growth axis or Partial (0001) 3.5 ° Polishing Si surface polishing Bandgap 2

4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, customized thickness 4inch 4H-N silicon carbide crystal sic wafers for 4inch seed crystal grade; 3inch 4inch 4h-n 4h-semi dummy test grade silicon carbide sic wafers Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES Product Name: Silicon carbide (SiC) crystal substrate Product Description: 2-6inch Technical

4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, customized thickness 4inch 4H-N silicon carbide crystal sic wafers for 4inch seed crystal grade; Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES Product Name: Silicon carbide (SiC) crystal substrate Product Description: 2-6inch Technical parameters: Cell structure Hexagonal Lattice constant a = 3.08 Å c = 15.08 Å

silicon carbide sic broken block,Gem grade sic ingot , 5-15mm thickness sic scrap SiC Wafer Feature Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å Stacking Sequence ABCB ABCACB Mohs Hardness ≈9.2 ≈9.2 Density 3.21 g/cm3 3.21 g/cm3 Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K Refraction Index @750nm no = 2.61 ne = 2.66 no = 2.60 ne = 2.65 Dielectric Constant c~9.66 c~9.66 Thermal Conductivity (N-type, 0

3inch sic wafer,4H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​ Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

4H High Purity Semi-Insulating Silicon Carbide Substrateshigh purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​ Applications of SiC Crystal Substrates and Wafers Silicon carbide (SiC) crytsals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength optoelectronic, high

4H High Purity Semi-Insulating Silicon Carbide Substrateshigh purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​ About SiC Crystal Silicon carbide (SiC), also known as carborundum /kɑːrbəˈrʌndəm/, is a semiconductor containing silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite.

6inch sic substrates, sic ingot ,sic crystal ingots ,sic crystal block, sic semiconductor substrates,6inch Silicon Carbide Wafer,4H-semi SiC wafer,6inch 4H-N type dummy grade sic wafer for test, 1. Description Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å Stacking Sequence ABCB ABCACB Mohs Hardness ≈9.2 ≈9.2 Density 3.21 g/cm3 3.21 g/cm3 Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K Refraction Index

6inch sic substrates ,6inch sic wafers, sic crystal ingots , sic crystal block ,sic semiconductor substrates,Silicon Carbide Wafer 6 inch diameter, Silicon Carbide (SiC) Substrate Specification Grade Zero MPD Grade Production Grade Research Grade Dummy Grade Diameter 150.0 mm±0.2mm ThicknessΔ 350 μm±25μm or 500±25un Wafer Orientation Off axis : 4.0° toward< 1120> ±0.5° for 4H-N On axis : ±0.5° for 6H-SI/4H-SI Primary Flat {10-10}±5.0° Primary Flat Length 47.5 mm±2.5 mm Edge

10 Mm X 10 Mm 6H Semi-Insulating Type SiC Substrate Research Grade SiC Crystal Substrate 4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, 4h-semi 4h-N customized square shape sic wafers, 10 mm x 10 mm 6H Semi-Insulating Type SiC, Research Grade, SiC Crystal Substrate Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectron

2inch Silicon Carbide Wafers 6H or 4H-N type or Semi-Insulating SiC Substrates 4H-N Type / Semi Insulating SiC Substrates 2inch 3inch 6inch Silicon Carbide Wafers What is a sic wafer A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to its high thermal resistance, it also features a very high level of hardness. Classification Silicon

Product Description High-Purity Semi-Insulating (HPSI) SiC wafers are advanced single-crystal silicon carbide substrates designed for power electronics, RF, and high-frequency devices. They offer excellent thermal conductivity, high resistivity, strong chemical stability, and superior mechanical hardness. Ideal as a substrate for GaN HEMTs, SiC MOSFETs, and other high-power, high-frequency applications, HPSI wafers ensure minimal leakage, efficient heat dissipation, and

Product Description 2inch Silicon carbide wafer's Product description: This 2-inch (50.8 mm) 6H-polytype, N-type Silicon Carbide wafer is a high-performance semiconductor substrate engineered for advanced research and specialized electronic applications. Leveraging a wide bandgap of approximately 3.02 eV, this wafer provides superior thermal conductivity and high-breakdown field strength compared to traditional silicon. Doped with Nitrogen to achieve consistent N-type

The Precision Silicon Ring (Si Ring) is a semiconductor-grade consumable component used in plasma etching, deposition, and wafer processing equipment. It functions as a focus ring, edge ring, or chamber liner ring, helping to control plasma distribution, improve etching uniformity, and protect chamber hardware from direct ion bombardment. Manufactured from high-purity single crystal silicon or polycrystalline silicon, the ring offers excellent compatibility with silicon wafer

The High-Purity Single Crystal Silicon Electrode is a semiconductor-grade plasma chamber component designed for use in advanced etching, deposition, and surface modification equipment. Manufactured from ultra-clean single crystal silicon (5N purity), it provides stable electrical performance, excellent plasma compatibility, and precise gas/electric field control in critical semiconductor processes. As a core consumable inside plasma reactors, silicon electrodes directly

The CVD Silicon Carbide (SiC) Electrode is a high-performance semiconductor chamber component engineered for plasma etching, PECVD, ICP, and advanced wafer processing systems. Manufactured from high-purity Chemical Vapor Deposition (CVD) Silicon Carbide, the electrode delivers exceptional plasma erosion resistance, thermal stability, and long-term electrical consistency in aggressive semiconductor environments. Compared with conventional silicon electrodes, CVD SiC electrodes

The SiC Dummy Wafer (Silicon Carbide Carrier Wafer / Process Monitor Wafer) is a high-durability process wafer engineered for semiconductor equipment qualification, chamber seasoning, thermal stabilization, process verification, and production wafer protection. Unlike device-grade wafers used for chip fabrication, SiC dummy wafers function as auxiliary wafers within semiconductor process tools to maintain chamber equilibrium, optimize thermal distribution, and improve process

6inch Silicon carbide ingot's Product description: Our 6 inch diameter Silicon Carbide ingot is a premium semiconductor-grade substrate material engineered for high-power and high-frequency electronic applications. Sourced through strategic factory partnerships, our ingots are grown using the Physical Vapor Transport (PVT) method, ensuring exceptional crystalline quality and minimal defect density (Low EPD/MPD). Available for power devices or Semi-Insulating for RF applicatio

SiC wafer's Product description: Our 6H-Polytype N-Type Silicon Carbide Epitaxial Wafer is engineered for high-performance optoelectronics, harsh-environment sensing, and advanced material research. This 6-inch (150mm) substrate features a precision 350 µm thickness, offering superior mechanical stability for complex microfabrication. While 4H-SiC dominates power electronics, the 6H-polytype excels in UV photodetection, Graphene sublimation growth, and high-temperature MEMS