SiC Substrate

The High-Purity Single Crystal Silicon Electrode is a semiconductor-grade plasma chamber component designed for use in advanced etching, deposition, and surface modification equipment. Manufactured from ultra-clean single crystal silicon (5N purity), it provides stable electrical performance, excellent plasma compatibility, and precise gas/electric field control in critical semiconductor processes. As a core consumable inside plasma reactors, silicon electrodes directly

The CVD Silicon Carbide (SiC) Electrode is a high-performance semiconductor chamber component engineered for plasma etching, PECVD, ICP, and advanced wafer processing systems. Manufactured from high-purity Chemical Vapor Deposition (CVD) Silicon Carbide, the electrode delivers exceptional plasma erosion resistance, thermal stability, and long-term electrical consistency in aggressive semiconductor environments. Compared with conventional silicon electrodes, CVD SiC electrodes

The SiC Dummy Wafer (Silicon Carbide Carrier Wafer / Process Monitor Wafer) is a high-durability process wafer engineered for semiconductor equipment qualification, chamber seasoning, thermal stabilization, process verification, and production wafer protection. Unlike device-grade wafers used for chip fabrication, SiC dummy wafers function as auxiliary wafers within semiconductor process tools to maintain chamber equilibrium, optimize thermal distribution, and improve process

6inch Silicon carbide ingot's Product description: Our 6 inch diameter Silicon Carbide ingot is a premium semiconductor-grade substrate material engineered for high-power and high-frequency electronic applications. Sourced through strategic factory partnerships, our ingots are grown using the Physical Vapor Transport (PVT) method, ensuring exceptional crystalline quality and minimal defect density (Low EPD/MPD). Available for power devices or Semi-Insulating for RF applicatio

SiC wafer's Product description: Our 6H-Polytype N-Type Silicon Carbide Epitaxial Wafer is engineered for high-performance optoelectronics, harsh-environment sensing, and advanced material research. This 6-inch (150mm) substrate features a precision 350 µm thickness, offering superior mechanical stability for complex microfabrication. While 4H-SiC dominates power electronics, the 6H-polytype excels in UV photodetection, Graphene sublimation growth, and high-temperature MEMS

SIlicon Carbide Wafer 4inch dia x 350um 4H-N type P/R/D grade MOSEFTs/SBD/JBS Product description: 4inch x 350um±25um Silicon Carbide wafer with 4 degree ±0.5° toward plane cutting angle, doped to N-type conductivity. Being a third-generation semiconductor, it plays an critical role in automotive industry as main traction inverter and high-speed motor drive. Its high band-gap gives it excellent high-voltage, high frequency and high-temperature tolerance. Unlike traditional

Premium 3C-SiC Substrates: N-Type Production Grade Wafers for 5G & Power Electronics Pioneering Third-Generation Semiconductor Solutions Fig 1. High-Purity 3C-SiC Semiconductor Wafer With over a decade of dedicated expertise, ZMSH stands at the forefront of advanced material R&D. We deliver highly customized semiconductor substrates—including SiC, Silicon, Sapphire, and SOI wafers. Our silicon carbide portfolio comprehensively covers 4H, 6H, and 3C polytypes, offering

High-Quality 4H-N Silicon Carbide Substrates (12-Inch/300mm) for High-Power Devices 1. Comprehensive Product Introduction The 12-inch (300 mm) Silicon Carbide (SiC) substrate represents the current frontier in wide-bandgap (WBG) semiconductor technology. As the global industry transitions toward higher efficiency and higher power density, this large-diameter crystalline platform provides the essential foundation for next-generation power electronics and RF systems. Key

High-Quality 4H-N Silicon Carbide Substrates (12-Inch/300mm) for High-Power Devices 1. Comprehensive Product Introduction The 12-inch (300 mm) Silicon Carbide (SiC) substrate represents the current frontier in wide-bandgap (WBG) semiconductor technology. As the global industry transitions toward higher efficiency and higher power density, this large-diameter crystalline platform provides the essential foundation for next-generation power electronics and RF systems. Key

12-Inch 300mm 4H-N SiC Substrate for Power Semiconductor Manufacturing 1. Product Overview The 12-inch (300 mm) silicon carbide (SiC) substrate is a large-diameter wide-bandgap semiconductor material designed for advanced power electronics and high-frequency device manufacturing. Compared with conventional 6-inch and 8-inch SiC wafers, the 12-inch format significantly increases usable wafer area, enabling higher device output per wafer, improved manufacturing efficiency, and

12-Inch 300mm 4H 6H SiC Single Crystal Silicon Carbide Wafer for Power & LED Devices Product Overview: ZMSH provides high-quality 12-inch (300mm) single crystal silicon carbide (SiC) wafers, grown using the Physical Vapor Transport (PVT) method. Silicon carbide is a wide-bandgap semiconductor with excellent electrical and thermal properties, including high thermal conductivity, high breakdown voltage, high electron mobility, and high saturated drift velocity, making it ideal

Silicon Carbide Rectangle Substrate SiC Chip for Advanced Electronics Product Overview: The Silicon Carbide (SiC) rectangle substrate is an advanced single-crystal semiconductor material designed to meet the stringent requirements of modern power electronics, optoelectronic devices, and high-frequency applications. SiC is recognized for its excellent thermal conductivity, wide electronic bandgap, and exceptional mechanical strength, which makes it ideal for use in extreme

10×10mm 4H-N Type SiC Substrate: Technical Overview and Applications High-Performance Semiconductor Solution for Advanced Electronics 1. Product Overview The 10×10mm 4H-N type silicon carbide (SiC) substrateis a high-performance semiconductor material based on third-generation SiC technology. Manufactured via Physical Vapor Transport (PVT)or High-Temperature Chemical Vapor Deposition (HTCVD), it offers exceptional thermal, electrical, and mechanical properties. With a

Industrial-Grade 6H SiC Substrates for High-Temperature, UV, and Precision Electronics Product Overview 6H Silicon Carbide (SiC) substrates are high-quality single-crystal wafers designed for high-temperature, high-voltage, and specialized optoelectronic applications. Unlike 4H SiC, 6H offers a different hexagonal polytype with slightly lower electron mobility but excellent thermal stability, mechanical strength, and cost-effectiveness for niche uses such as UV LEDs, high

Product Description HPSI SiC Wafer Overview HPSI SiC Wafer: 2 - 12 Inch Optical Grade for AI/AR Glasses HPSI-type SiC wafers (High-Purity Semi-Insulating Silicon Carbide) are pivotal optical materials in AI and AR glasses. With a high refractive index (2.6 - 2.7 @ 400 - 800 nm) and low optical absorption characteristics, they effectively address issues such as "rainbow effects" and insufficient light transmittance that are common in traditional glass or resin materials used

4H Silicon Carbide Substrate for Power Electronics, RF Devices & UV Optoelectronics Product Overview The 4H-SiC Substrate is a high-purity, single-crystal silicon carbide material designed for advanced power electronics, RF devices, and optoelectronic applications. Produced through the PVT method and finished with precision CMP polishing, each substrate features ultra-low defect density, excellent thermal conductivity, and stable electrical characteristics. Its compact size

Product Description: Silicon Carbide (SiC) Wafer Solutions Product Overview As the transportation, energy, and industrial markets evolve, the demand for reliable, high-performance power electronics continues to grow. To meet the requirements for improved semiconductor performance, device manufacturers are turning to wide-bandgap semiconductor materials, such as our 4H-SiC Prime Grade (4H-type n-type silicon carbide) wafers. These wafers offer exceptional crystal quality and

High-Purity Semi-Insulating Silicon Carbide Substrates - Multi-Diameter Wafer Solutions (2" to 8") Product Summary High-purity semi-insulating (HPSI) silicon carbide wafers represent advanced semiconductor substrate materials engineered for high-frequency, high-power, and elevated-temperature operational environments. Manufactured in 2-inch through 8-inch diameter configurations, these substrates are available in multiple quality tiers: Prime Grade (for production), Dummy

4H-N Type SiC Substrate 10*10 mm – Customizable Semiconductor Wafer Product Overview The 4H-N type SiC 10*10 mm small wafer is a high-performance semiconductor substrate based on silicon carbide (SiC), a third-generation semiconductor material. Fabricated via Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD), it is available in 4H-SiC or 6H-SiC polytypes and N-type or P-type doping configurations. With dimensional tolerances within ±0.05 mm