Silicon Carbide Crystal

100.0mm±0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm±2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects becauseof the wide energy bandgap. Also, this property allows SiC to emit and detect short wavelength light which makes the fabrication of bluelight emitting diodes and nearly solar blind UV photodetectors possible. 6inch SiC ingot specifications Grade

SiC seed crystal S grade 6" S grade φ153±0.5mm SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabrication of very high-voltage, high-power devices such as diodes, power transitors, power thyristors and surge suppressors, as well as high power microwave devices. Additionally, it allows the devices to be placed very close together,

SiC ingot crystal 4" P grade SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC. SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any metal. This property enables SiC devices to operate at extremely high power levels and still dissipate the large amounts of excess

JDZJ01-001-008 4&6inch SiC Seed crystal The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high- power/high-frequency electronic devices. SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabrication of very high-voltage,

JDZJ01-001-007 Silicon Carbide Seed Crystal Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects becauseof the wide energy bandgap. Also, this property allows SiC to emit and detect short wavelength light which makes the fabrication of bluelight emitting diodes and nearly solar blind UV photodetectors possible. 4&6inch SiC Seed crystal Grade S level S level Seed crystal specifications 6”SiC 6”SiC

SiC seed crystal S grade 6" S grade φ153±0.5mm SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any metal. This property enables SiC devices to operate at extremely high power levels and still dissipate the large amounts of excess heat generated. Grade S level S level Seed crystal specifications 6”SiC 6”SiC Diameter(mm) 153±0.5 155±0.5

SiC ingot crystal 6" Pgrade Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula is SiC. Since the late 19th century silicon carbide has been an important material for sandpapers, grinding wheels, and cutting tools. SiC can be also used as an electrical heating element because of its high electrical conductivity, good oxidation resistance, and high thermal shock resistance. 6inch SiC ingot specifications

100.0mm±0.5mm SiC Seed Crystal 4" P Grade 4.0°±0.2° Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabrication of very high-voltage, high-power devices such as diodes, power transitors, power thyristors and surge suppressors, as well as high power microwave devices. Additionally, it allows the

4" P Grade SiC Seed Crystal Resistivity 0.015~0.028ohm.Cm 32.5mm±2.0mm SiC Seed Crystal 4" PGrade SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any metal. This property enables SiC devices to operate at extremely high power levels and still dissipate the large amounts of excess heat generated. 6inch SiC ingot specifications Grade

JDZJ01-001-001 SiC Seed Crystal 4" P Grade Si-Face 90°Cw.From Primary Flat±5° SiC Seed Crystal 4" PGrade The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high- power/high-frequency electronic devices. 6inch SiC ingot specifications Grade Production Grade Dummy Grade Politype 4H Diameter 100.0mm±0.5mm Carrier Type N-type Resistivity 0.015~0.028ohm.cm

0.015~0.028ohm.Cm SiC Seed Crystal 4" P Grade N-Type Orientation 4.0°±0.2° SiC Seed Crystal 4" PGrade SiC CRYSTAL is an ultra-high purity silicon carbide grain or powder, specially manufactured to achieve extremely low levels of impurities. It is used to measure the impurities within SiC Crystal because unlike green or black silicon carbide, the impurity levels are so low that traditional measurement techniques will not detect their presence. SiC Crystal is available in

Primary Flat Lengh 32.5mm±2.0mm SiC Seed Crystal 4" P Grade 100.0mm±0.5mm 0.015~0.028ohm.cm SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabrication of very high-voltage, high-power devices such as diodes, power transitors, power thyristors and surge suppressors, as well as high power microwave devices.