Aluminum Nitride Wafer
JDWY01-001-002 2 Inch Thick Film (1,2)Um AIN On Sapphire Wafer DSP XRD FWHM Of(002)≤80arcsec(102) ≤650arcsec
2 inch thick film (1,2)um AIN on sapphire wafer,DSP,XRD FWHM of(002)≤80arcsec(102) ≤650arcsec UV disinfection, LED chip A thin film of aluminum nitride is a form of semiconductor material. It is highly conductive and can withstand high temperatures. It is also resistant to electromagnets and has a high boiling point. As a result, it is commonly used in mobile phones and other electronics. However, it is not advisable to process Aluminum Nitride on Silicon Wafers without
JDCD02-001-004 10*10mm2 AlN Single Crystal 400±50μM S/P/R Grade
JDCD02-001-004 10*10mm2 AlN Single Crystal 400±50μM S/P/R Grade AlN Single Crystal Substrate Applications Widely used in the preparation of high temperature, high frequency, high power electronic devices.It is an important blue and ultraviolet light-emitting material; High thermal conductivity, high melting point, high resistivity, strong breakdown field and low dielectric coefficient. 10*10mm2 Aluminum nitride single crystal substrate Crystal Specifications Parameter value
JDWY01-001-007 2 Inch Thick Film (4,5)Um AIN On Sapphire Wafer,SSP,XRD FWHM Of(002)≤160arcsec\(102) ≤400arcsec
2 inch thick film (4,5)um AIN on sapphire wafer,SSP,XRD FWHM of(002)≤160arcsec(102) ≤400arcsec UV disinfection, LED chip Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. Item AlN-T-C-U-C50 Dimensions φ50.8 mm±0.1 mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0 mm Substrate Sapphire(Single or Double Side Polished) Thickness 1~5μm
JDWY01-001-006 2 Inch Thick Film (3,4)Um AIN On Sapphire Wafer,DSP,XRD FWHM Of(002)≤120arcsec(102) ≤450arcsec
2 inch thick film (3,4)um AIN on sapphire wafer,DSP,XRD FWHM of(002)≤120arcsec(102) ≤450arcsec UV disinfection, LED chip AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to alumina substrate , It is about 7 to 8 times high . AlN
JDWY01-001-004 2 inch thick film (2,3)um AIN on sapphire wafer,DSP,XRD FWHM of(002)≤100arcsec(102) ≤550arcsec
2 inch thick film (2,3)um AIN on sapphire wafer,DSP,XRD FWHM of(002)≤100arcsec(102) ≤550arcsec UV disinfection, LED chip Aluminum Nitride is also an excellent electrical insulator. It can be used in solar cells. But its high thermal conductivity makes it potentially hazardous when exposed to sunlight. Therefore, it is a good material for electronics. While it does not conduct electricity or heat, it is highly conductive. As a result, Aluminum Nitride is an excellent material
ALN 10*10mm2 AlN Single Crystal 400±50μM S/P/R Grade
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to alumina substrate , It is about 7 to 8 times high . AlN substrate is an excellent electronic package material . A thin film of aluminum nitride is a layer of aluminum that is
1 Inch AlN Single Crystal wafer 400±50μM S/P/R Grade
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to alumina substrate , It is about 7 to 8 times high . AlN substrate is an excellent electronic package material . A thin film of aluminum nitride is a layer of aluminum that is
Semi Insulating AIN Sapphire Wafer Sapphire Single or Double Side Polished
2 Inch Thick Film (1,2)μm AIN On Sapphire Wafer SSP XRD FWHM Of(002)≤80arcsec(102) ≤650arcsec UV Disinfection LED Chip The material is a good electrical insulator with excellent thermal conductivity. Its high insulating properties make it an excellent choice for a variety of applications. A wide variety of products can be made from aluminum nitride. This is the most common use for aluminum nitride. It is an important material in the aerospace industry. However, there are some
1inch AlN Single Crystal Aluminum Nitride Wafer 450um
JDCD02-001-001 1inch AlN single crystal 400±50μm S/P/R grade AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to alumina substrate , It is about 7 to 8 times high . AlN substrate is an excellent electronic package material . A thin
2inch Aluminum Nitride Wafer Single Or Double Side Polished
2in AIN On Sapphire Wafer Sapphire Single Or Double Side Polished AlN-T-C-U-C50 2 Inch Thick Film (2,3)Um AIN On Sapphire Wafer,SSP,XRD FWHM Of(002)≤100arcsec(102) ≤550arcsec UV Disinfection LED Chip Overview The electricity savings of using LEDs instead of traditional cold-cathode fluorescent lamps (CCFLs) can reach 70%. Also, unlike CCFLs, AlN LEDs do not contain mercury, allowing more environmentally friendly disposal. AlN LEDs can also be used for non-line-of-sight
2 Inch Semi Insulating AIN Sapphire Single Crystal Wafer C Plane
2 Inch Semi-Insulating AIN On Sapphire Wafer C-Plane (0001)±1o 2 Inch Thick Film (2,3)μm AIN On Sapphire Wafer,SSP,XRD FWHM Of(002)≤100arcsec(102) ≤550arcsec UV Disinfection LED Chip Overview A major use of AlN-on-sapphire are ultraviolet (UV) LEDs. Some of the most powerful applications include irradiating hospital rooms and foundry cleanrooms, since AlN-on-sapphire LEDs disinfect instruments and can purify air and water of germs and bacteria without using chemicals.
25.4mm 1inch AlN Single Crystal 400um 2H Crystal Form
25.4±0.5mm 1inch AlN Single Crystal 400±50μM S/P/R Grade {0001}±0.5° JDCD02-001-002 1inch AlN single crystal 400±50μm S/P/R grade Aluminum Nitride is a highly desirable material in specific applications where high thermal conductivity, electrical insulation, and/or mechanical strength is required. The material is a good electrical insulator with excellent thermal conductivity. Its high insulating properties make it an excellent choice for a variety of applications. A wide
AIN On Aluminum Nitride Wafer Roughness Ra<1.5nm
C-Plane (0001)±1o AIN On Sapphire Wafer Surface Roughness Ra
2 Inch Thick Film Aluminum Nitride Wafer AIN On Sapphire Wafer Al Face
2 Inch Thick Film (1,2)μm AIN On Sapphire Wafer φ50.8 mm±0.1 mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0mm 2 Inch Thick Film (1,2)μm AIN On Sapphire Wafer SSP XRD FWHM Of(002)≤80arcsec(102) ≤650arcsec UV Disinfection LED Chip The material is stable at high temperatures under an inert atmosphere. It has a protective oxide layer that protects the material at up to 1370degC. It is also stable in hydrogen atmospheres up to 980degC. It can be dissolved or hydrolyzed by strong
Semi Insulating Aluminum Nitride Wafer AIN On Sapphire Wafer Surface
2 Inch Thick Film (1,2)μm AIN On Sapphire Wafer SSP XRD FWHM Of(002)≤80arcsec(102) ≤650arcsec UV Disinfection LED Chip A thin film of aluminum nitride is a layer of aluminum that is resistant to high temperatures. During high temperatures, this layer of aluminum will help protect the material. In high-pressure environments, it can be unstable. It can withstand a range of temperatures up to 980degC. At lower levels, it can be toxic to humans. It is also used in mobile phones.
C Plane AIN On Sapphire Wafer Single Or Double Side Polished
C-plane (0001)±1o AIN On Sapphire Wafer Sapphire(Single or Double Side Polished) 2 Inch Thick Film (1,2)Um AIN On Sapphire Wafer SSP XRD FWHM Of(002)≤80arcsec(102) ≤650arcsec UV Disinfection LED Chip AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal
1inch Aluminum Nitride AlN Single Crystal Sapphire Wafer 400um
JDCD02-001-003 1inch AlN single crystal 400±50μm S/P/R grade What is Aluminum Nitride? Aluminum Nitride (AlN) is an excellent material to use if high thermal conductivity and electrical insulation properties are required; making it an ideal material for use in thermal management and electrical applications. 1inch Aluminum nitride single crystal substrate Crystal Specifications Parameter value Diameter(mm) 25.4±0.5 Thickness(μm) 400±50 Crystal Form 2H Polytype {0001}±0.5°
1um To 5um Aluminum Nitride Substrate Single Or Double Side Polished
1~5μm AIN On Sapphire Wafer Sapphire Single or Double Side Polished 2 Inch Thick Film (1,2)Um AIN On Sapphire Wafer SSP XRD FWHM Of(002)≤80arcsec(102) ≤650arcsec UV Disinfection LED Chip Aluminum nitride was first synthesized in 1877 and has many applications in microelectronics. It is a very good electrical insulator and has high thermal conductivity. Single crystals of the material have an extremely high thermal conductivity, making them ideal for a variety of electronic
Thick Film 2um 3um AIN On Sapphire Wafer 2 Inch Semi Insulating
Thick Film (2,3)μm AIN On Sapphire Wafer 2 Inch Semi-Insulating 2 Inch Thick Film (2,3)μm AIN On Sapphire Wafer,SSP,XRD FWHM Of(002)≤100arcsec(102) ≤550arcsec UV Disinfection LED Chip Overview If you've ever wondered what is aluminum nitride, you've probably wondered what its potential applications might be. The material is a solid nitride of aluminium and has a very high thermal conductivity of up to 321 W. It also has excellent electrical insulator properties and has a band
1inch AlN Single Crystal Aluminum Nitride Wafer 400μm S / P / R Grade
JDCD02-001-001 1inch AlN single crystal 400±50μm S/P/R grade AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to alumina substrate , It is about 7 to 8 times high . AlN substrate is an excellent electronic package material . 1inch