Signal Power Amplifier

10W 5.8G PA Professional Wireless Signal Power Amplifier YPM506010B for Wifi Network and within SZHUASHI Original Supply Product Description YPM506010B is a wireless signal shielding module dedicated to 5100-5900MHz signal. This module has the advantages of high average output power, and good in band flatness. Features Frequency Range 5100-5900MHz Operation Voltage 12V Output power 38.5dBm Power flatness

SZ-HUASHI 5.8GHz 5700MHz -5900MHz 50W Amplifier The Ultimate Solution for Wireless Signal Amplification Product DescriptionYPM5850B is a power amplifier module specifically designed for 5700-5900MHz signals. This power amplifiermodule has high average output power and is flat in band Good stability and other advantages, the moduleprovides a 28V power supply mode. SpecificationsFrequency: 5.7-5.9GHzAverage Output Power in Band: 47dBm(50W)Working Voltage: 32VMax Input Power

20W 43dBm Output Power 2400-2500MHz Frequency Range PA Signal Amplifier by SZHUASHI YPM2420B for High Power Applications Product Description SZHUASHI 100% New 2.4GHz-2.5GHz 20W Power Amplifier Optimized WIFI Signal Booster& WIFI Signal Shield Specifications Frequency: 2.4-2.5GHz Average Output Power in Band: 43dBm(20W) Working Voltage: 12-24V Average Efficiency: 45% Band Fluctuation:< 1dB Nominal Rating Operating Voltage:24VOperating temperature:-30~+85°CStorage temperature:

20W 43dBm Power Amplifier PA Signal Booster for Wireless Lan Network SZHUASHI 100% 5.8GHz 5700-5900MHz Product Description SZHUASHI 100% New 5.8GHz ( 5700-5900MHz ) 20W 43dBm Power Amplifier PA Optimized Signal Booster& WIFI Signal Shield Specifications Frequency: 5.7-5.9GHz Average Output Power in Band: 43dBm(20W) Working Voltage: 24V Average Efficiency: 40% Band Fluctuation:< 1dB Nominal Rating Operating Voltage:24VOperating temperature:-30~+85°CStorage temperature:-40~+150

100W GaN RF Power Amplifier with High Efficiency Wide Bandwidth for 2.0-6.2GHz INNOTION High Stability 100W GaN RF Power Amplifier Model YPM206208100M is a 100-watt, internally 50Ω matched GaN HEMT power amplifier designed specifically with high efficiency, high stability and wide bandwidth capabilities. This makes the YPM206208100M ideal for 2000MHz~6200MHz continuous wave amplifier applications. Key Features Negative Gate Voltage and Bias Sequencing Required Excellent

SZHUASHI YP10401560T 50W High Efficiency High Gain Wide Bandwidth Capability Amplifier with Frequency 4400MHz to 6000MHz Product Description Innotion’s YP40601650T is a 50-watt, internally matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the YP40601650T ideal for multiple applications with frequency from 4400MHz to 6000MHz. Pout 50W Working Voltage 28V

100W YPM12100B Standard Signal Power Amplifier Wireless Signal Shielding Module for 1150-1330MHz Product Description YPM12100B is a wireless signal shielding module dedicated to 1150-1300MHz signal. This module has the advantages of high average output power, and good in band flatness. Product Description Signal bandwidth: 1150-1330MHz Output power: 50dBm(100W) Operating Voltage: 28-32V Power flatness: < 1dB Packing & Delivery To better ensure the safety of your goods,

SZHUAHSI 100% New 40W 5725-5850MHz PA Wireless Signal Power Amplifier RF Amplifier Module Repeater with Power flatness 1dB Product Description YPM5840B is a wireless signal shielding module dedicated to 5725-5850MHz signal. This module has the advantages of high average output power, and good in band flatness. Features Frequency Range 5725-5850MHz Operation Voltage 28V Output power 46dBm Power flatness

Wired LAN 80W Gain RF Signal Generator Power Amplifier Module PA for Network Optimization YPM07620880M for 700MHz~6200MHz Product Description YPM07620880M is a 80-watt, internally 50ohm matched GaN HEMT, designed specifically with high efficiency, high stability and wide bandwidth capabilities, which makes the YPM07620880M ideal for 700MHz~6200MHz, CW amplifier applications. Features Suitable for linear and saturation applications Pout=80W, CW Typical VDS:28 V Freq Range:0.7

SZHUASHI High Power 30W 28V Output Wifi Signal Power Amplifier PA YPM06601030M for 0.6-6.0GHz Product Description YPM06601030M is a 30-watt, internally 50ohm matched GaN HEMT, designed specifically with high efficiency, high stability and wide bandwidth capabilities, which makes the YPM06601030M ideal for 600MHz~6000MHz, CW amplifier applications. Features Suitable for linear and saturation applications Pout=30W, CW Typical VDS:28 V Freq Range:0.6-6.0GHz Excellent Thermal

YP161515T 4G/3G 15W 12V LDMOS FETs Signal Power Amplifier for All Typical Modulation FormatsProduct Description Innotion’s YP161515T is a 15 watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio and Beidou RDSS System applications. It can be used in Class AB/B and Class C for all typical modulation formats. RatingValueDrain-Source Voltage+40VGate-Source Voltage-10 to 10VOperating Voltage+12VStorage Temperature Range-65 to +150 ℃Case Operating Temperature+150

SZHUASHI Original High Stability and Wide Bandwidth Capabilities 100W 2.0-6.2GHz 28V PA Power Amplifier YPM206208100M Product Description YPM206208100M is a 100-watt, internally 50ohm matched GaN HEMT, designed specifically with high efficiency, high stability and wide bandwidth capabilities, which makes the YPM206208100M ideal for 2000MHz~6200MHz, CW amplifier applications. Negative Gate Voltage and Bias Sequencing Required Excellent Thermal Stability and Excellent

SZHUASHI 100% New YP552228 Two Stage RF Signal Power Amplifier For Linearity 15dBm Input for 4.9-5.9G Linear Product Description YP552228 2-Stage 4.9GHz-5.9GHz High Efficiency / Linearity Power Amplifier InGaP/GaAs HBT technology Parameter Rating Input RF Power +15 dBm Supply Voltage -0.5 to +7.0V Bias Voltage -0.5 to +4.0V DC Supply Current 1000mA Operating Ambient Temperature -40 to +85°C Storage Temperature -40 to +150°C Packing & Delivery To better ensure the safety of

RFint 100W 2000mA Wireless Lan Wifi PA YP3236W Three-Stage Gain Power Amplifier for 300-1000MHz Product Description Parameter Rating Input RF Power with 50R Output Load +15 dBm Supply Voltage -0.5 to +8.0V Bias Voltage (VREF) -0.5 to +3.5V DC Supply Current 2000mA Operating Ambient Temperature -40 to +85°C Storage Temperature -40 to +150°C Packing & Delivery To better ensure the safety of your goods, professional, environmentally friendly, convenient and efficient packaging

Power Amplifier 100W Output Power SZHUASHI 5GHz-6GHz 12.3dB for Wireless Communication Infrastructure and EMC Testing Product Description YP506012100T is a 100-watt, internally matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the YP506012100T ideal for 5000MHz~6000MHz, either Pulse or CW application. There is no guarantee of performance when this part is

SZHUASHI 100% YP243433 Three-stage High-linearity 1.8 to 2.8GHz High-Gain Power Amplifier PA Black Product Description The YP243433 is a three-stage, high-linearity, high-gain power amplifier. The device is manufactured on an advanced InGaP/GaAs HBT process. This amplifier provides a typical gain of 35dB and P1dB power of 33dBm, typical bias condition is 5V at 320mA. The input are internally matched to 50Ω and require a minimum of external matching components to cover the

SZHUASHI 100% New 45W 4500MHz-6000MHz PA Power Amplifier GaN HEMT High Efficiency / Gain And Broadband Capacity Product Description Features Pout 45W Frequency 4500MHz-6000MHz Packing & Delivery To better ensure the safety of your goods, professional, environmentally friendly, convenient and efficient packaging services will be provided. Company Profile Zhongshi Zhihui Technology (suzhou) Co., Ltd. is located in Suzhou Industrial Park, founded in 2010, the company is mainly

60W High Gain Wide Bandwidth Capability Frequency up to 4000MHz SZHUASHI YP10401560T for High Frequency Applications Product Description YP10401560T Gallium Nitride 28V, 60W, RF Power Transistor Description Innotion’s YP10401560T is a 60-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal

RFint 100% New Efficientcy Power Amplifier PA Compass Satellite Communication And Navigation YP163137 for Network Wireless Lan Product Description The YP163137 is a high-power, high-efficiency Power Amplifier intend for Compass Satellite Communication and Navigation. The Power Amplifier provides a typical gain of 31 dB and P1dB of 37dBm with CW input, typical quiescent bias condition is 6.0V at 50mA. The device is manufactured on an advanced InGaP/GaAs Heterojunction Bipolar

RFint YP242034 Black High Power PA Rf Amplifier In GaP/GaAs HBT Technology for 2.4-2.5GHz Product Description The YP242034 is a high-power PA based on the highly-reliable InGaP/GaAs HBT technology. It can be easily configured for high-power, high-gain applications with super power-added efficiency while operating over the 2.4~2.5GHz frequency band. The YP242034 is assembled in a 16-pin, 4×4mm2, QFN package. It is internally integrated with ESD protection unit. Features