Single FETs, MOSFETs

SL3139KDW -20V/-0.66A Dual P-Channel MOSFET The SL3139KDW is a dual P-Channel MOSFET designed for load and power switching applications. It features low RDS(on) and operates at low logic level gate drive, making it suitable for interfacing and battery management in ultra-small portable electronics. This lead-free product comes in a surface mount package. Product Attributes Lead Free Product is Acquired Surface Mount Package P-Channel Switch with Low RDS(on) Operated at Low

Product Overview The SSFN4903 is a 40V P-Channel MOSFET that leverages advanced MOSFET process technology to achieve high cell density and low on-resistance. This design results in a highly efficient and reliable device, ideal for high-efficiency switch mode power supplies and a wide range of other applications. Its key benefits include fast switching, reverse body recovery, low on-resistance, and low gate charge, making it particularly suitable for hand-held devices, battery

Product Overview The SP2102CT3 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It offers high power and current handling capabilities in a surface mount SOT-323 package. Key applications include battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co., Ltd. Product Code: SP2102CT3 Channel Type: N-Channel MOSFET Package: SOT-323 Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit Product

Product Overview The SP40N25TQ is a 250V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching and synchronous rectification, this MOSFET features fast switching speeds, low gate charge, and low Rdson. It is 100% tested for single pulse avalanche energy and is ideal for DC-DC converter applications. The device comes in a TO-220-3L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:

Product OverviewThis Power MOSFET utilizes advanced TRENCH technology, engineered to minimize conduction losses, deliver superior switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is ideal for PWM applications, load switching, and power management scenarios.Product AttributesBrand: SLKORMicroModel: SL90N03DTechnology: Advanced TRENCHTesting: 100% avalanche testedCapability: Improved dv/dtTechnical Specificat

Product Overview The Wolfspeed WAS175M12BM3 is a 1200 V, 175 A Silicon Carbide Half-Bridge Module designed for high-frequency operation with ultra-low losses. It features zero reverse recovery from diodes and zero turn-off tail current from the MOSFET, offering normally-off, fail-safe device operation. The module boasts an industry-standard 62mm footprint, facilitating system retrofits and enabling increased system efficiency due to the low switching and conduction losses of

2410122001_Wild-Goose-WGD65R550G_C22369138.pdf

Product Overview The SSFH6538 is a 650V N-Channel MOSFET designed with advanced MOSFET process technology for high cell density and low on-resistance. It offers ideal performance for battery-operated systems, load switching, power converters, and other general-purpose applications. Key benefits include low on-resistance, low gate charge, and fast switching with rapid reverse body recovery, making it highly efficient and reliable for high-efficiency switch mode power supplies

Product OverviewThe SL4826A is a 60V/6.3A Dual N-Channel MOSFET designed for high-density cell design, offering ultra-low RDS(ON). It is fully characterized for avalanche voltage and current and features an excellent package for good heat dissipation. This MOSFET is ideal for power switching applications.Product AttributesBrand: SLKormicroModel: SL4826APackage: SOP-8Technical SpecificationsSymbolParameterConditionMinTypMaxUnitBV(BR)DSSDrain-Source Breakdown VoltageVGS=0VID

Product OverviewThe SL2026 is a P-Channel MOSFET featuring leading trench technology for low on-state resistance (RDS(on)) and low gate charge. Designed for efficient power management, it offers a drain-source voltage of -20V and a continuous drain current of -3.2A. Its robust design makes it suitable for applications such as video monitors and power management systems.Product AttributesDevice Code: M26Brand: SLKOR MicroPackage: SOT-23Technical SpecificationsSymbolParameterCo

Product Overview The SL9N150T is a high-performance N-channel MOSFET designed for demanding switching applications. It features 100% avalanche tested, avalanche ruggedness, minimized gate charge, very low intrinsic capacitances, high speed switching, and very low on-resistance. Ideal for use in welders, UPS systems, PV inverters, and general switching applications. Product Attributes Brand: SLKormicro Model: SL9N150T Technical Specifications Parameter Symbol Test Conditions

Product OverviewThis N-Channel and P-Channel complementary Power MOSFET series features Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching and is suitable for applications such as wireless chargers, load switches, and power management.Product AttributesBrand: SLKORMICROPackage: TO-252-4LTechnical SpecificationsParameterSymbolN-Channel (Typical)P-Channel (Typical)UnitProduct SummaryVDSVDS30V-30VVIDID12A-8AARDS(ON)

Product OverviewThis Dual N-Channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(on) with low gate charge. It is suitable for a wide range of applications, offering features such as low gate charge, advanced high cell density trench technology for ultra-low RDS(ON), and an excellent package for good heat dissipation. A green device option is also available.Product AttributesBrand: slkormicroModel: IRF7341Package: SOP-8Certifications: Green

Product OverviewThe SL318N04M is an N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features fast switching speed, reliability, and ruggedness, making it suitable for various power management tasks. This product is ROHS Compliant & Halogen-Free, 100% UIS and Rg Tested, and has a Moisture Sensitivity Level of MSL1.Product AttributesBrand: SLKORMicroCertifications: ROHS Compliant & Halogen-FreeTesting: 100% UIS and Rg TestedMoisture Sensitivity

Product OverviewThe SL9435A is a Trench Power MV MOSFET featuring an excellent package for heat dissipation and a high-density cell design for low RDS(ON). It is designed for applications such as DC-DC converters and power management functions.Product AttributesBrand: SLKORMicroDevice Code: 9435ATechnical SpecificationsParameterConditionMinTypMaxUnitDrain-Source Breakdown VoltageVGS=0VID=-250A-30----VZero Gate Voltage Drain CurrentVDS=-30VVGS=0V-----1uAGate-Body Leakage

Product OverviewThe SL53N10Q is a N-Channel Enhancement Mode MOSFET designed for fast switching speeds, reliability, and ruggedness. It is ROHS Compliant & Halogen-Free, 100% UIS Tested and Rg Tested. This MOSFET is suitable for applications such as motor drivers and DC-DC converters.Product AttributesBrand: SLKORMicro (implied by URL)Certifications: ROHS Compliant & Halogen-Free, 100% UIS Tested, Rg TestedTechnical SpecificationsParameterSymbolN-Channel UnitTest ConditionsMi

Product OverviewThis P-Channel MOSFET, SL3423, is designed for fast switching applications. It features super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology. It is also available as a green device.Product AttributesBrand: SLKOR MicroModel: SL3423Package: SOT-23Technology: TrenchFeatures: Green Device AvailableTechnical SpecificationsSymbolParameterConditionMin.Typ.Max.UnitsAbsolute Maximum RatingsVDSDrain-Source Voltage

SL9968 N-Channel Enhancement Mode MOSFETThe SL9968 is a high-performance N-Channel Enhancement Mode MOSFET designed for power management applications. It offers a robust and reliable solution with key features including a 100V drain-source voltage and low on-state resistance (RDS(ON) = 100m max. @ VGS=10V). This device is available in lead-free and green (RoHS compliant) versions, making it suitable for environmentally conscious designs. Its primary applications include DC/DC

Product OverviewThis 25V/100A N-Channel MOSFET utilizes Trench Power LV MOSFET technology, offering high power and current handling capabilities with low gate charge. It is ideal for PWM applications, power management, and load switching scenarios.Product AttributesBrand: SLKORMicroModel: SL0C100ATechnology: Trench Power LV MOSFETPackage: PDFN5X6-8LTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitStatic Electrical CharacteristicsBV(BR)DSSVGS=0VID=250A25---

Product Overview The SL2319A is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. Its high-density cell design ensures low RDS(ON) and high-speed switching capabilities. This device is designed for applications requiring efficient power management. Product Attributes Brand: SLKormicro (inferred from URL) Origin: Not specified Material: Not specified Color: Not specified Certifications: Not specified Technical Specifications