Single Bipolar Transistors
PNP Darlington Power Transistor JSMSEMI TIP126-JSM Silicon Type with High DC Current Gain and TO220C
Product OverviewThe TIP125/126/127 are Silicon PNP Darlington Power Transistors designed for general-purpose amplifier and low-speed switching applications. They feature a TO-220C package, high DC current gain, and low collector saturation voltage. These transistors are complementary to the TIP120/121/122 series.Product AttributesBrand: JSMICRO SemiconductorMaterial: SiliconPackage: TO-220CTechnical SpecificationsModelParameterConditionsValueUnitTIP125VCBO Collector-base
High current capability PNP transistor JSMSEMI SS8550 suitable for power amplification and complementary SS8050
Product OverviewThe SS8550 is a PNP transistor designed for power amplification circuits. It offers high current capability and is complementary to the SS8050 transistor, making it suitable for various power amplification applications.Product AttributesBrand: JSMICRO SemiconductorModel: SS8550Type: PNPTechnical SpecificationsParameterSymbolValueUnitTest ConditionsAbsolute Maximum Ratings (Ta=25)VCBO-40VVCEO-25VVEBO-5VIC (Continuous)-1.25-1.5*ANote: At Ib=100mA, IC can operate
Power Amplification and Motor Driver Electronic Component JSMSEMI S8550 PNP Semiconductor Transistor
Product OverviewThe S8550 is a PNP semiconductor transistor designed for low-frequency power amplification and as a driver for small motors. It is complementary to the S8050, offering a versatile solution for various electronic applications.Product AttributesBrand: JSMICRO SemiconductorProduct Type: PNP Semiconductor TransistorComplementary to: S8050Marking: S8550:2TYTechnical SpecificationsCharacteristicSymbolRatingUnitTest ConditionMin.Typ.Max.Collector-Base VoltageVCBO
TO220 Package Medium Power NPN Silicon Transistor JSMSEMI TIP41C for Linear Switching Applications
TIP41 Series NPN Power TransistorThe TIP41 series are NPN silicon power transistors in a TO-220 plastic package. They are complementary to the TIP42 series and are designed for medium power linear switching applications.Product AttributesBrand: JSMICRO SemiconductorComplementary to: TIP42Technical SpecificationsParameterSymbolTIP41TIP41ATIP41BTIP41CUnitTest ConditionsMinTypMaxAbsolute Maximum Ratings (Ta=25)Collector to Base VoltageVCBO406080100VCollector to Emitter
TO92 plastic package NPN transistor JSMSEMI 2N3904 ideal for general purpose low current low voltage
Product OverviewLow current, low voltage general purpose amplifier. This is a Silicon NPN transistor in a TO-92 Plastic Package.Product AttributesBrand: JSMICRO SemiconductorModel: 2N3904Type: NPN Semiconductor TriodePackage: TO-92 Plastic PackageTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector to Base Voltage (Breakdown)VCBOIC=10A, IE=060VCollector to Emitter Voltage (Breakdown)VCEOIC=1.0mA, IB=040VEmitter to Base Voltage (Breakdown)VEBOIE=10A, IC
NPN Silicon Transistor JSMSEMI S8050 Featuring 25 Volt Collector Emitter Voltage and 0.5 Amp Current
Product OverviewThe S8050 is an NPN Silicon General Purpose Transistor, complementary to the S8550. It is designed for general-purpose applications with a collector current rating of IC = 0.5 A.Product AttributesBrand: JSMICRO SemiconductorModel: S8050Type: NPN Silicon General Purpose TransistorComplementary to: S8550Technical SpecificationsParameterSymbolRatingsUnitTest ConditionsCollector to Base VoltageVCBO40VCollector to Emitter VoltageVCEO25VEmitter to Base VoltageVEBO5V
NPN transistor JSMSEMI MPS2222A suitable for switching amplification and general electronic circuits
Product OverviewThe MPS2222A is a general-purpose NPN silicon transistor designed for various electronic applications. It offers complementary PNP type availability with the MPS2907A. This transistor is suitable for switching and amplification circuits.Product AttributesBrand: JSMICRO SemiconductorModel: MPS2222AComplementary Type: MPS2907AMaterial: SiliconPackage: TO-92Technical SpecificationsParameterSymbolTest ConditionsMINMAXUnitsCollector-Base VoltageVCBO75VCollector
Power Dissipation 0625 Watt PNP Epitaxial Silicon Transistor JSMSEMI S9012 with 05 Amp Collector Current
Product OverviewThe JSMICRO Semiconductor S9012 is a PNP Epitaxial Silicon Transistor designed for general-purpose applications. It offers features such as a power dissipation of 0.625 W and a collector current of -0.5 A, making it suitable for various electronic circuits.Product AttributesBrand: JSMICRO SemiconductorModel: S9012Type: PNP Epitaxial Silicon TransistorOrigin: Not specifiedMaterial: SiliconColor: Not specifiedCertifications: Not specifiedTechnical Specifications
High reliability transistor JSMSEMI NJW0281G-JSM with 150 degree Celsius maximum junction temperature
Product OverviewThe NJW0281G/NJW0302G are semiconductor discrete devices from JSMICRO Semiconductor, designed for general-purpose amplification, audio power amplification, power supply regulation, and other electronic circuits. These transistors feature high breakdown voltage, low leakage current, and superior frequency characteristics, making them suitable for demanding applications.Product AttributesBrand: JSMICRO SemiconductorModel Numbers: NJW0281G, NJW0302GType:
Low noise NPN silicon epitaxial transistor JSMSEMI PBR951 ideal for demanding RF and CATV applications
Product OverviewThe PBR951 is an NPN silicon epitaxial transistor engineered for low-noise amplification across VHF, UHF, and CATV bands. It offers excellent dynamic range and favorable current characteristics, making it suitable for demanding RF applications.Product AttributesBrand: JSMICRO SemiconductorModel: PBR951Type: NPN silicon epitaxial transistorMarking: W2WOrigin: China (implied by website and page numbering)Technical SpecificationsCharacteristicSymbolMin.Typ.Max
PNP General Purpose Transistor JSMSEMI BC857-JSM Suitable for Switching Amplification Applications
Product OverviewThe PNP general-purpose transistor series BC856/857/858 offers low current (max. 100mA) and low voltage capabilities, making them suitable for general-purpose switching and amplification applications.Product AttributesBrand: JSMICRO SemiconductorTechnical SpecificationsType No.MarkingPackage CodeVCBO (V)VCEO (V)VEBO (V)IC (A)PC (mW)Tj,Tstg ()V(BR)CBO (V)V(BR)CEO (V)V(BR)EBO (V)ICBO (nA)IEBO (A)hFE (VCE=-5V,IC=-2mA)VCE(sat) (V)VBE(sat) (V)VBE(on) (V)Cc (pF)fT
fast switching NPN transistor JSMSEMI BU406 JSM ideal for various electronic circuit power management
Product OverviewThe BU406 is a high voltage, fast-switching NPN power transistor designed for general-purpose applications. It features low saturation voltage and Pb-free packaging options, making it suitable for various electronic circuits requiring efficient power handling and rapid switching capabilities.Product AttributesBrand: JSMICRO SemiconductorModel: BU406Package Type: TO-220-3LCertifications: PbFree Packages AvailableTechnical SpecificationsParameterSymbolTest
Silicon Transistor JSMSEMI C945 Featuring Low Noise and High Voltage Operation for Amplifier Circuits
Product OverviewThe C945 is a Silicon Epitaxial Planar Transistor designed for high voltage and high current applications. It features excellent hFE linearity and low noise, making it suitable for audio frequency amplifier circuits. Available in a SOT-23 package.Product AttributesBrand: JSMICRO SemiconductorMaterial: Silicon Epitaxial Planar TransistorPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsCollector-Base VoltageVCBO@ Ta=2560VCollect
Low frequency power amplifier transistor JSMSEMI 2SD667A featuring DC current gain and voltage specs
Product OverviewThe 2SD667/A is a low frequency power amplifier designed as a complementary pair with the 2SB647/A. It offers robust performance with high breakdown voltages and reliable DC current gain characteristics.Product AttributesBrand: JSMICRO SemiconductorProduct Type: Transistor (NPN)Package: TO-92Technical SpecificationsModelParameterSymbolTest ConditionsMinTypMaxUnit2SD667/ACollector-base breakdown voltageV(BR)CBOIC=10A,IE=0120VCollector-emitter breakdown voltageV
High Current Gain NPN Transistor JSMSEMI BC817 Suitable for AF Applications and Medium Power Circuits
Product OverviewThe BC817-16/-25/-40 is an NPN general-purpose amplifier designed for AF applications. It offers complementary PNP type BC807, high collector current, high current gain, and low collector-emitter saturation voltage. This device is suitable for general-purpose medium power amplification and switching applications requiring collector currents up to 1.2mA.Product AttributesBrand: JSMICRO SemiconductorComplementary PNP Type: BC807Package Type: SOT-23Technical
Silicon NPN Power Transistor JSMSEMI 2SC2073 TO220 Package Suitable for Power Amplifier Applications
Product OverviewThe 2SC2073 is a Silicon NPN transistor in a TO-220 Plastic Package. It features a wide Safe Operating Area and is complementary to the 2SA940. This transistor is designed for power amplifier and vertical output applications.Product AttributesType: NPN Silicon Power TransistorPackage: TO-220 Plastic PackageComplementary to: 2SA940Technical SpecificationsParameterSymbolRatingUnitTest ConditionsMinTypMaxCollector to Base VoltageVCBO150VCollector to Emitter
General Purpose PNP Transistor JSMSEMI MMBT3906 Medium Power Amplification and Switching Applications
Product OverviewThe MMBT3906 NP is a general-purpose PNP transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications. A complementary NPN type, the MMBT3904, is also available. This transistor offers a collector current capability of -200mA and a low maximum voltage rating of -40V.Product AttributesBrand: JSMICRO SemiconductorModel: MMBT3906 NPPackage Type: SOT-23Technical SpecificationsSymbolParameterCondition
High Gain PNP Silicon Transistor JSMSEMI BC807 with Low Collector Emitter Saturation Voltage in SOT23
Product OverviewThe BC807-16/-25/-40 is a PNP Silicon Epitaxial Planar Transistor designed for general-purpose applications. It features epitaxial planar die construction, a complementary counterpart to the BC817, high collector current capability, high current gain, and a low collector-emitter saturation voltage. This transistor is housed in a SOT-23 package.Product AttributesBrand: JSMICRO SemiconductorMaterial: SiliconCertifications: UL flammability classification rating
TO92 Package Silicon PNP Transistor JSMSEMI 2N3906 for General Purpose Low Current Amplification
Product OverviewThe 2N3906 is a Silicon PNP transistor in a TO-92 Plastic Package. It is designed for general purpose amplification with low current and low voltage characteristics.Product AttributesBrand: JSMICRO SemiconductorPackage Type: TO-92 Plastic PackageTransistor Type: PNP Silicon TransistorTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector to Base VoltageVCBOIC=-10A IE=0-40VCollector to Emitter VoltageVCEOIC=-1.0mA IB=0-40VEmitter to Base
General purpose switching and amplifier transistor JSMSEMI MMBT2907A PNP type with planar die design
Product OverviewThe MMBT2907A is a PNP general-purpose amplifier and switching transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications, with a useful dynamic range extending to 600mA as a switch and to 100MHz as an amplifier. A complementary NPN type, the MMBT2222A, is also available.Product AttributesBrand: JSMICRO SemiconductorPackage Type: SOT-23Certifications: JEDEC Class 3A (ESD HBM)Technical