Single, Pre-Biased Bipolar Transistors
Slkor SMUN5211DW
Product OverviewThe BRT (Bias Resistor Transistor) integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network, simplifying circuit design, reducing board space, and decreasing component count. The SMUN5211DW model houses two BRT devices in a SOT-363 package, ideal for low-power surface mount applications
Silicon NPN Epitaxial Transistor TOSHIBA RN1706 LF Ultra Super Mini Type with Built In Bias Resistors
Product OverviewThe TOSHIBA RN1701 to RN1706 series are NPN epitaxial silicon transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interface circuits, and driver circuits. They offer advantages such as simplified circuit design, reduced component count, and miniaturization of equipment. The series includes devices in a USV (ultra super mini type with 5 leads) package and offers various resistance values to suit
Silicon NPN Epitaxial Transistor TOSHIBA RN1403 TE85L F for Simplified Design and Reduced Components
Product OverviewThe RN1401 to RN1406 series are silicon NPN epitaxial bipolar transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. Their integrated bias resistor simplifies circuit design, reduces the number of external components, and contributes to system size reduction and assembly time savings. They are AEC-Q101 qualified and complementary to the RN2401 to RN2406
TOSHIBA RN2303 TE85L F PNP Epitaxial Transistor for in Switching Inverter and Driver Circuit Designs
Product OverviewThe RN2301 to RN2306 series are silicon PNP epitaxial bipolar transistors featuring built-in bias resistors (PCT Process). These transistors are designed for applications requiring reduced external component count, leading to smaller system size and simplified assembly. They are complementary to the RN1301 to RN1306 series and are AEC-Q101 qualified.Product AttributesBrand: ToshibaCertifications: AEC-Q101 qualifiedTechnical SpecificationsPart NumberApplication
TOSHIBA RN1703JE TE85L F Extreme Super Mini 5 Pin Silicon NPN Transistor for Low Parts Count Designs
Product OverviewThe RN1701JE~RN1706JE series are silicon NPN epitaxial transistors featuring a built-in bias resistor, designed for switching, inverter, interface, and driver circuit applications. These devices are housed in an extreme-super-mini 5-pin package, offering reduced parts count and lower assembly costs for more compact equipment. A wide range of resistor values is available to suit various circuit designs. These transistors are complementary to the RN2701JE to
Integrated Bias Resistor Silicon PNP Bipolar Transistor TOSHIBA RN2309 TE85L F for Switching Circuits
Product OverviewThe RN2307 to RN2309 series are silicon PNP epitaxial bipolar transistors featuring integrated bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuits. The built-in bias resistor simplifies circuit design by reducing the need for external components, leading to smaller system size and faster assembly times. Toshiba offers a range of resistance values to suit various applications.Product AttributesBrand:
Silicon NPN Epitaxial Transistor TOSHIBA RN1301 LF for Simplified Driver and Inverter Circuit Design
Product OverviewThe RN1301~RN1306 series are Silicon NPN Epitaxial Transistors utilizing a PCT Process. These transistors are designed for switching, inverter circuit, interface circuit, and driver circuit applications. Key advantages include built-in bias resistors, which simplify circuit design and reduce the quantity of parts and manufacturing process. They are complementary to the RN2301 to RN2306 series.Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial Type
Silicon NPN Transistor TOSHIBA RN1426 TE85LF Designed for Switching and Inverter Circuit Applications
Product OverviewThe Toshiba RN1421 to RN1427 series are NPN epitaxial silicon transistors featuring built-in bias resistors, designed for switching, inverter, interface, and driver circuit applications. These high-current type transistors (IC max = 800 mA) simplify circuit design by reducing component count and manufacturing processes, offering low VCE(sat) and a complementary series RN2421 to RN2427.Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial Type (PCT
Silicon NPN Bipolar Transistor Featuring Integrated Bias Resistor TOSHIBA RN1306 LF for Circuit Assembly
Product OverviewThe RN1301 to RN1306 series are Silicon NPN Epitaxial Type bipolar transistors featuring an integrated bias resistor, utilizing the PCT Process. These transistors are designed for switching, inverter circuits, interfacing, and driver circuits. The built-in bias resistor simplifies circuit design by reducing the need for external components, leading to smaller system sizes and faster assembly times. Toshiba offers a range of resistance values to suit various
TOSHIBA RN1903 LF CT Silicon NPN Epitaxial Transistor for Interface Circuit Applications US6 Package
TOSHIBA RN1901~RN1906 Silicon NPN Epitaxial TransistorThe TOSHIBA RN1901 to RN1906 series are silicon NPN epitaxial type transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuit, interface circuit, and driver circuit applications. They are available in US6 (ultra super mini type with 6 leads) packages, offering simplified circuit design, reduced part quantities, and streamlined manufacturing processes. These devices are
Integrated Bias Resistor Bipolar Transistor Silicon NPN Type TOSHIBA RN1309 TE85L F for Circuit Assembly
Product OverviewThe RN1307 to RN1309 series are silicon NPN epitaxial bipolar transistors featuring an integrated bias resistor. This design reduces the need for external components, leading to smaller system sizes and simplified assembly. These transistors are complementary to the RN2307 to RN2309 series and are AEC-Q101 qualified.Product AttributesBrand: ToshibaType: Silicon NPN Epitaxial Bipolar Transistor (Bias Resistor built-in)Process: PCT ProcessCertifications: AEC
Bias Resistor Built in Silicon NPN Epitaxial Transistor TOSHIBA RN1115 LF CT for Electronic Switching
Product OverviewThe RN1114 to RN1118 series are silicon NPN epitaxial bipolar transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. Their integrated bias resistor simplifies circuit design by reducing the number of external components required, leading to smaller system sizes and faster assembly times. Toshiba offers a range of resistance values to suit various circuit
RN1107MFV L3F CT Silicon NPN Epitaxial Transistor with Integrated Bias Resistor AEC Q101 Certified
Product OverviewThe RN1107MFV to RN1109MFV series are silicon NPN epitaxial bipolar transistors featuring an integrated bias resistor. These transistors are manufactured using the PCT Process and are designed for various applications including switching, inverter circuits, interfacing, and driver circuits. They are AEC-Q101 qualified and come in an ultra-small package suitable for high-density mounting. The integrated bias resistor simplifies circuit design by reducing the
TOSHIBA RN1906 LF CT US6 Package Silicon NPN Transistor Suitable for Switching and Inverter Circuits
Product OverviewThe TOSHIBA RN1901~RN1906 series are silicon NPN epitaxial transistors featuring built-in bias resistors (PCT Process). These transistors are designed for switching, inverter, interface, and driver circuit applications. They are available in US6 (ultra super mini type with 6 leads) packages, offering simplified circuit design, reduced part count, and streamlined manufacturing processes. These devices are complementary to the RN2901 to RN2906 series.Product
High density mounting PNP transistor TOSHIBA RN2105MFV L3F CT ideal for switching and driver circuit
Product OverviewThe RN2101MFV to RN2106MFV series are silicon PNP epitaxial bipolar transistors featuring an integrated bias resistor. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. They offer ultra-small packaging suitable for high-density mounting, and the built-in resistor reduces external component count, leading to smaller system size and faster assembly times. Toshiba provides a range of resistance values
Switching and Driver Circuit Silicon NPN Transistor TOSHIBA RN1102MFV L3F with Built in Bias Resistor
Product OverviewThe RN1101MFV to RN1106MFV series are Silicon NPN Epitaxial Type Bipolar Transistors featuring an integrated bias resistor (PCT Process). These transistors are designed for switching, inverter circuits, interfacing, and driver circuits. They offer an ultra-small package suitable for high-density mounting, reducing the need for external components and simplifying assembly. Toshiba provides a range of resistance values to accommodate diverse circuit designs, and
Integrated Bias Resistor Silicon NPN Bipolar Transistor TOSHIBA RN1302 TE85L F for Compact and Circuits
Product OverviewThe RN1301 to RN1306 series are Silicon NPN Epitaxial Type Bipolar Transistors featuring a built-in bias resistor (PCT Process). These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. Their integrated bias resistor simplifies circuit design by reducing the need for external components, leading to smaller system sizes and faster assembly times. Toshiba offers a range of resistance values to suit diverse
TOSHIBA RN4984 LF CT Silicon NPN PNP Bipolar Transistor for Driver and Interface Circuit Applications
Product OverviewThe RN4984 is a silicon NPN/PNP epitaxial bipolar transistor featuring built-in bias resistors. This integrated design reduces the need for external components, leading to smaller system sizes and simplified assembly. It is suitable for switching, inverter circuits, interfacing, and driver circuit applications.Product AttributesBrand: ToshibaCertifications: AEC-Q101 qualifiedTechnical SpecificationsTypeCharacteristicsSymbolRatingUnitTest ConditionQ1 Absolute
Switching and Driver Circuit Silicon NPN Transistor TOSHIBA RN1302LF Featuring Built in Bias Resistors
Product OverviewThe RN1301 to RN1306 series are silicon NPN epitaxial bipolar transistors featuring built-in bias resistors, manufactured using the PCT process. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. Their integrated bias resistors simplify circuit design, reduce component count, and minimize system size and assembly time. They are AEC-Q101 qualified and complementary to the RN2301 to RN2306 series
Switching transistor TOSHIBA RN1501 TE85L F ultra super mini SMV type with multiple resistance options
Product OverviewThe Toshiba RN1501 to RN1506 series are NPN epitaxial silicon transistors utilizing a PCT Process. These devices are designed for switching, inverter circuits, interface circuits, and driver circuits. They feature two devices in an SMV (ultra super mini type with 5 leads) package and include built-in bias resistors, simplifying circuit design, reducing part count, and enabling equipment miniaturization. Various resistance values are available to suit diverse