Shanghai GaNova Electronic Information Co., Ltd.
                                                                                                           
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Since 2020
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2 inch Free-standing SI-GaN Substrates

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
Product Description

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices

 

To reduce the Fe trapping carrier and the sheet resistances of the two-dimension electron gas generated from the interface of AlGaN and GaN, the thickness ratio of Fe-doped and undoped GaN bi-epilayers was also optimized. AlGaN/GaN high electron mobility transistors with the optimum doping concentration of Fe-doped GaN and suitable thickness of undoped GaN have been successfully developed.

 

 

2-inch Free-standing SI-GaN Substrates
  Excellent level (S) Production level (A) Research level (B) Dummy level (C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note:

(1) Useable area: edge and macro defects exclusion

(2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o

S-1 S-2 A-1 A-2
Dimension 50.8 ± 1 mm
Thickness 350 ± 25 μm
Orientation flat (1-100) ± 0.5o, 16 ± 1 mm
Secondary orientation flat (11-20) ± 3o, 8 ± 1 mm
Resistivity (300K) > 1 x 106 Ω·cm for Semi-insulating (Fe-doped; GaN-FS-C-SI-C50)
TTV ≤ 15 μm
BOW ≤ 20 μm ≤ 40 μm
Ga face surface roughness

< 0.2 nm (polished)

or < 0.3 nm (polished and surface treatment for epitaxy)

N face surface roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)

Package Packaged in a cleanroom in single wafer container
Useable area > 90% >80% >70%
Dislocation density <9.9x105 cm-2 <3x106 cm-2 <9.9x105 cm-2 <3x106 cm-2 <3x106 cm-2
Orientation:C plane (0001) off angle toward M-axis

0.35 ± 0.15o

(3 points)

0.35 ± 0.15o

(3 points)

0.35 ± 0.15o

(3 points)

Macro defect density (hole) 0 cm-2 < 0.3 cm-2 < 1 cm-2
Max size of macro defects   < 700 μm < 2000 μm < 4000 μm

 

* National standards of China (GB/T32282-2015)

 

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Shanghai GaNova Electronic Information Co., Ltd.
Location Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
Contact Person Xiwen Bai (Ciel)

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