Product  description

Ion implantation is a very important technology in modern IC manufacturing, which uses ion implanters to dope semiconductors, i.e., using tungsten-thorium wires as cathodes to emit electrons to bombard gas molecules containing specific impurity elements, resulting in ionized specific impurity atoms accelerated by electrostatic fields onto the surface of silicon single crystal wafers and into the semiconductor, changing the conductive properties and eventually forming transistor structures. The ion injector consists of a gas system, a vacuum system, a motor system, a control system, and a beamline system.

The beamline system includes the ion source, extraction electrode, mass spectrometer, back-end accelerator, charge neutralization system, wafer handler, and beam blocker. Tungsten devices made from thick (2~45 mm) tungsten plates are mainly used in the ion source system of semiconductor ion implanters to confine and shield ionizing rays, and are the key components of the ion source system.

The processing process of high-precision tungsten devices for semiconductor ion implantation is tungsten powder → pressing → sintering → rolling → heat treatment of finished products → wire cutting → machining.

Features:

The purity of the molybdenum waveguide is above 99.95%;
Its density is higher than 10.2g/cm³;
Precisely machined and with excellent surface roughness;

Molybdenum waveguide is of strong wear resistance.

Product detail

Packaging & Delivery:

Application industry

Semiconductor materials industry
Marine transportation industry
Optical and optoelectronic industry
Aerospace industry