High Temperature Vacuum Furnace Parts Molybdenum Tungsten Sapphire Crystal Growing Furnace
high temperature sapphire crystal growing furnace/ crystal growth processing Furnace
Product description
Sapphire is a single crystal of aluminum oxide (Al2O3) with a wide optical transmission band, from near ultraviolet (190 nm) to mid-infrared.from near-UV (190nm) to mid-IR. Sapphire crystal has excellent optical properties, mechanical properties and chemical stability, high strength, hardness, corrosion resistance, and can work under the harsh conditions of high temperature close to 2000℃, so it is widely used in infrared military devices, satellite space technology, and window material for high intensity laser. Its unique lattice structure, excellent mechanical properties, and good thermal properties make sapphire crystal the most ideal substrate material for practical applications of semiconductor
GaN/Al2O3 light-emitting diodes (LEDs), large-scale integrated circuits SOI and SOS and superconducting nanostructured films.
With stable high-temperature chemical properties, small thermal deformation, long service life and other advantages, tungsten-molybdenum materials have become irreplaceable materials for high-quality sapphire crystal growing furnaces.
Sapphire single crystals are usually prepared by the following methods:
| Methods | Advantages | Disadvantages |
|
CZ |
Easy observation of crystal growth,the "necking" process has better crystal integrity and is not forced by the crucible |
Vulnerable to mechanical vibration irregular convection of the melt, crystals need subsequent annealing treatment, long cycle time and high cost
|
|
HEM |
Large size and high quality. In-situ annealing is possible | No rotation of crystals, temperature field not easily homogeneous:Helium as coolant, high cost:Crucible forcing effect is significant |
|
TGT |
Simple equipment. Easy to operate,no mechanical disturbance, stable interface, high yield:c-axis crystals can be grown | No rotation of the crystal,temperature field not easily homogeneous: crystal requires subsequent annealing treatment Long cycle time, high cost;Crucible forcing effect is significant |
|
Kyropoulos |
Temperature field, precise control of crystal growth rate and cooling rate, high crystal quality | Vulnerable to mechanical vibration, crystals require subsequent annealing treatment, long cycle time and high cost |
|
SAPMAC |
"Necking"process,growth process controlled in stages, good crystal integrity: in-situ annealing possible, short cycle time, low cost: not subject to crucible forced action | Vulnerable to temperature fluctuations; not easy to grow c-axis crystals |
Main tungsten-molybdenum parts of thermal fields for KY method sapphire crystal growing furnaces
Heater
Crucibles
Lateral inner layer reflecting screens
Crucible supporting systems
Main tungsten-molybdenum parts of thermal fields for other sapphire crystal growing furnaces
Sapphire Crystals
Sapphire KY method crystal growth flow chart
Applications of sapphire crystals:
LED, watch surfaces, mobile screens
Infrared-transmitting window materials
Substrate substrates for microelectronics
Medical environmental protection laser textile industry and other fields
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