Sapphire Wafer

Information of Sapphire Substrates Sapphire substrates are critical foundational materials for LEDs and GaN devices. Although its own market size (approximately USD 833 million globally by 2031) is relatively limited, it underpins downstream applications worth trillions of dollars, bearing strategic and pioneering significance. Upstream: High-purity alumina (mainly 4N5 and above), crystal growth equipment (such as Kyropoulos furnaces), and tungsten‑molybdenum thermal fields.

Product Overview Sapphire tubes are tubular single-crystal components fabricated from high-purity synthetic single-crystal alumina (α-Al₂O₃). Single-crystal ingots are grown via processes such as the Kyropoulos method and Edge-defined Film-fed Growth (EFG), and then processed through multiple procedures including precision internal slicing, inner/outer cylindrical grinding and end-face polishing. They inherit all the excellent properties of sapphire single-crystal materials,

Product Overview The 12-inch (300mm) sapphire wafer is a high-end large-format specification in the sapphire substrate sector. It is fabricated from 4N5 to 5N grade high-purity synthetic single-crystal alumina (α-Al₂O₃), with single-crystal ingots grown via advanced processes such as the Kyropoulos method, followed by semiconductor-grade procedures including multi-wire slicing, precision lapping and chemical mechanical polishing (CMP). As a large-size foundational substrate

Product Overview The 8-inch (200mm) sapphire wafer is a large-format semiconductor substrate fabricated from high-purity synthetic single-crystal alumina (α-Al₂O₃). It serves as a core foundational substrate for LED epitaxy, GaN power devices and RF optoelectronic devices in the third-generation semiconductor industry. The single-crystal ingot is predominantly grown via the Kyropoulos method, and processed through precision procedures including multi-wire slicing, lapping and

We supply sapphire crystal materials and custom-manufactured sapphire components for optical, semiconductor, electronics, scientific and high-temperature industrial applications. Available product forms include sapphire crystal blanks, wafers, optical windows, circular discs, rectangular plates, rods, tubes and complex shaped components. Dimensions, crystal orientation, surface finish, edge treatment and dimensional tolerances can be customized according to customer drawings

Our TGV sapphire substrates are manufactured from high-quality sapphire wafers and processed with precision micro-machining technology to form through-via holes, blind holes, square cavities, patterned windows, and customized microstructures. Compared with ordinary glass materials, sapphire offers higher mechanical strength, better scratch resistance, excellent thermal stability, and strong chemical durability. These properties make sapphire an ideal substrate material for

ZMSH supplies high-quality WS₂ on Sapphire Wafers featuring continuous multilayer tungsten disulfide (WS₂) films grown on sapphire substrates. As a representative Transition Metal Dichalcogenide (TMD) material, WS₂ has attracted significant attention for next-generation electronics, optoelectronics, photodetectors, sensors, and advanced semiconductor research. Our WS₂ wafers offer excellent crystal quality, high film uniformity, smooth surface morphology, and strong optical

Our 4-inch sapphire wafer is a high-quality single crystal aluminum oxide substrate designed for semiconductor, optical, LED, sensor , and research applications . With excellent hardness, chemical stability, high-temperature resistance, optical transparency, and good electrical insulation, sapphire wafers are widely used in demanding industrial and scientific fields. We provide 4-inch sapphire wafers with customizable orientation, thickness, surface finish , and grade to meet

8-Inch to 12-Inch Glass Wafer | Borosilicate Glass Wafer and Fused Silica / Fused Quartz Wafer Our 8-inch to 12-inch glass wafers are high-quality wafer materials designed for semiconductor, MEMS, optical, microfluidic, sensor, display, and research applications . We provide different glass wafer materials, including borosilicate glass wafers and fused silica / fused quartz wafers , to meet various requirements for thermal stability, optical transmission, chemical resistance,

2-Inch to 12-Inch 4H-N Type Silicon Carbide Wafer, SiC Substrate for Power Electronics and Semiconductor Applications Our 2-inch to 12-inch 4H-N type silicon carbide wafers are high-quality SiC substrates designed for power electronics , semiconductor device fabrication , research and development , and advanced electronic applications . With excellent thermal conductivity, wide bandgap properties, high breakdown electric field, and strong chemical stability, 4H-N SiC wafers

Sapphire Temporary Wafer Carrier for Advanced Semiconductor Packaging Product Overview The sapphire temporary wafer carrier is a high-performance substrate solution designed for advanced semiconductor packaging processes, including ultra-thin wafer handling, 2.5D/3D IC integration, TSV, RDL, and fan-out panel-level packaging (FOPLP). It provides a rigid, thermally stable, and dimensionally precise support platform for temporary bonding and debonding processes, enabling stable

Product Description Our sapphire wafers are made of single crystal aluminum oxide (Al₂O₃) with a hexagonal lattice structure, commonly available in C-plane, A-plane, and R-plane orientations. With broad optical transparency from near-ultraviolet (190 nm) to mid-infrared, these wafers are ideal for optical components, infrared devices, high-strength laser windows, and mask materials. Sapphire’s high hardness, thermal stability, corrosion resistance, high melting point (2045°C)

The CVD Silicon Carbide (SiC) Ring is a semiconductor-grade plasma-resistant component designed for advanced etching, deposition, and plasma processing systems. Manufactured using high-purity Chemical Vapor Deposition (CVD) Silicon Carbide technology, the ring delivers exceptional resistance to plasma erosion, corrosive process gases, and thermal degradation in demanding semiconductor manufacturing environments. SiC rings are widely used as focus rings, edge rings, chamber

4inch Silicon carbide wafer's Product description: Our 4 inch N-Type Silicon Carbide Epitaxial Wafer is engineered for high-performance optoelectronics, harsh-environment sensing, and advanced material research. This 4-inch (101mm) substrate features a 350 µm thickness, which is one of the industry-standard sizes, offering superior mechanical stability for complex microfabrication. The 4H-SiC dominates power electronics, the majority of china market has been replaced with

2inch A-axis orientation sapphire wafer for epi-ready test ,sapphire optical windows, m-axis,c-axis, R-axis 2inch sapphire epi-ready​ substrate 1. Description Sapphire is one of the hardest materials, and possesses very good transmission during the range of visible and near IR spectrum.It is widely used as optical window in infrared and far infrared military equipments, apparatus and instruments of satellite and space technology, and navigation and spaceflight, such as night

ultrathin sapphire glass wafer ,2inch 0.1mm thickness sapphire wafer, 10x10x0.1mmt sapphire substrates, orientation dia50.8x0.1mmt sapphire wafers We can supply professional customized service in time and provide cooperation and support of new product development and technology appliance. 2inch 0.1mm thickness sapphire wafer specification Material: Single crystal Al2O3 99.999％ Orientation: C-plane(0001) Off M -axis 0.2°±0.1 Diameter:50.80±0.2mm Thickness :100±15um (80um also

dia150mm 6inch single side polished sapphire substrates forled ,C-plane,A-aixs R-plane 6inch Al2O3 crystal wafer,6inch C-axis double side polished sapphire wafer for led epi-ready,sapphire substrates, Al2O3 crystal optical lens About Sapphire Feature Product name led sapphire wafer sapphire optical lens chemical formula Al2O3 Crystal structure Hexagonal Hardness Mohs 9H Compressvise strength Gpa 2.0 Density(20℃) 3.98g/cm Fusion point 2040℃ Boiling point 2980℃ Coefficient of

Product Description 4-Inch C-Plane SSP Sapphire Wafer for GaN / III-Nitride Epitaxy Overview We produce 5N (99.999%) Purity monocrystalline Al₂O₃ for advanced semiconductor, optoelectronic, and optical applications. These substrates are polished on a single side for excellent surface smoothness (Ra ≤ 0.2 nm). These substrates offer exceptional thermal stability (>1500 °C), high optical transmittance (~86–89% at 550 nm), and tight thickness uniformity (TTV ≤20 µm). They are

Diamond-Aluminum Thermal Composite – Lightweight, High Thermal Conductivity & Low CTE Product Introduction The Diamond-Aluminum Thermal Conductive Composite is a high-performance thermal management material that combines the exceptionally high thermal conductivity of diamond with a lightweight and rigid aluminum matrix. This composite offers an excellent balance of high heat dissipation efficiency, low density, low coefficient of thermal expansion (CTE), and strong mechanical