GaN Epitaxial Wafer

4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers a number of benefits over silicon, including a higher breakdown voltage and better performance at high temperatures. GaN is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material

5*10mm2 SP-face (11-12) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview The GaN semiconductor device market includes key companies such as Cree, Infineon Technologies, Qorvo, MACOM, NXP Semiconductors, Mitsubishi Electric, Efficient Power Conversion (EPC), GaN Systems, Nichia Corporation, and Epistar Corporation. Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi-layered epitaxial

5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the potential to replace silicon as the heart of electronic chips. Gallium Nitride can sustain higher voltages than silicon and the current can flow faster through it. Moreover, the energy loss is significantly less in GaN, making it a lot more efficient. (10-11) face Free-standing GaN Substrates Item

5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power devices for use in projector light sources, inverters for electric vehicles, and other applications. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for LD applications (violet, blue and green). M

5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi-layered epitaxial wafers are used for the devices mainly to control electric power, and they are contributing to improving the efficiency of energy consumption. Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method

5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium nitride devices compared to silicon ones because GaN has the capacity to sustain much higher switching frequencies. It also has an increased ability to sustain elevated temperatures. A face Free-standing GaN Substrates Item GaN-FS-A-U-S GaN-FS-A-N-S GaN-FS-A-SI-S Remarks: A circular arc angle (R < 2 mm

10*10.5mm2 C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, and superior surface quality. 10 x 10.5 mm2 Free-standing GaN Substrates Item GaN-FS-C-U-S10

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors (HEMT) wafers on different substrates such as silicon substrate, sapphire substrate, silicon carbide (SiC) substrate. We offer GaN on SiC wafers for RF and Power applications. 2-inch Free-standing U-GaN/SI-GaN Substrates Excellent level (S) Production level(B) Research

10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for LD applications (violet, blue and green). Furthermore, development has progressed for power and high frequency electronic device application. 10 x 10.5 mm2 Free-standing GaN Substrates Item GaN-FS-C-U-S10 GaN-FS-C-N-S10 GaN-FS-C-SI-S10

2inch Blue-LED GaN on silicon wafer There are three main substrates that are used with GaN - Silicon Carbide (SiC), Silicon (Si) and Diamond. GaN on SiC is the most common of the three and has been used in various applications in the Military and for High Power Wireless Infrastructure Applications. GaN on Si is a newer substrate whose performance is not as good as SiC but it is more economical. GaN on Diamond is the best performing, however since it is new and relatively

10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview We provide high-quality GaN substrates which are produced by originally designed HVPE (Hydride Vapor Phase Epitaxy) method, utilizing more than 10 years of experience in the GaAsP epi-wafer business. 10 x 10.5 mm2 Free-standing GaN Substrates Item GaN-FS-C-U-S10 GaN-FS-C-N-S10 GaN-FS-C-SI-S10 Remarks: A circular arc angle (R < 2 mm) is used for

4 inch N-type Si-doped GaN on sapphire wafer SSP resistivity＜0.05 Ω cm LED, laser, PIN epitaxial wafer For lightly Si-doped GaN ([Si] = 2.1 × 1016 cm−3), the room temperature (RT) electron mobility was as high as 1008 cm2 V−1 s−1, which was dominantly limited by polar optical phonon scattering. Moreover, we found that heavily Si-doped GaN prepared using PSD exhibited an RT mobility as high as 110 cm2 V−1 s−1 at an electron concentration of 2 × 1020 cm−3, which indicated that

Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) is a wide bandgap semiconductor material with a direct bandgap of 3.4 eV, which makes it widely used in optoelectronic and power electronic devices. Preparation process The

Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) is a wide bandgap semiconductor material with a direct bandgap of 3.4 eV, which makes it widely used in optoelectronic and power electronic devices. Preparation process The process

Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium nitride crystals are grown. Gallium nitride (GaN)crystals have a wide range of application scenarios, including LEDs, high-speed electronic devices, and power electronic devices.

Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and

Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor Deposition) equipment, MBE (Molecular Beam Epitaxy) equipment, HVPE equipment, etc. to grow crystals and produce epitaxial wafers on substrate materials. Epitaxial wafers are then

Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor Deposition) equipment, MBE (Molecular Beam Epitaxy) equipment, HVPE equipment, etc. to grow crystals and produce epitaxial wafers on substrate materials. Epitaxial wafers are then

5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power devices for use in projector light sources, inverters for electric vehicles, and other applications. The features are high crystalline, good uniformity, and superior surface quality. GaN

350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the surface roughness of GaN Single Crystal Substrate with an atomic force microscope, which applies to GaN single crystal substrates grown by chemical vapor deposition and other methods