GaN Epitaxial Wafer

2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 ± 1 mm 350 ± 25 μm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN Breakdown Field A higher breakdown field means that gallium nitride is superior over silicon in high voltage circuits such as high-power products. Manufacturers and engineers can also use GaN in similar voltage applications while maintaining a significantly smaller footprint. 2

Dimension 100 ± 0.2mm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Thickness 5.5 ± 0.5μm 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Researchers from North Carolina State University and Purdue University have shown that the semiconductor material gallium nitride (GaN) is non-toxic and is compatible with human cells – opening the door to the material's use in a variety of biomedical implant technologies. LEDs, light emitting diodes, are light sources that are

5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, and superior surface quality. Gallium Nitride is a semiconductor technology used for high power,

5*10.5mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer The freestanding GaN substrate has a great potential to homo-epitaxy of optoelectronic and electronic devices with high reliability and performances. Here, we realized the growth of freestanding bulk GaN on dual-stack multilayer graphene as an insertion layer by the hydride vapor phase epitaxy

5 x 10mm2 Free-standing GaN Substrates 350 ±25 µm From 1 x 105 to 3 x 106 cm-2 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview There are three main substrates that are used with GaN - Silicon Carbide (SiC), Silicon (Si) and Diamond. GaN on SiC is the most common of the three and has been used in various applications in the Military and for High Power Wireless Infrastructure

2-inch Free-standing U-GaN/SI-GaN Substrates 350 ± 25 μm 50.8 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.

2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview High-quality GaN free-standing substrates with low dislocation density suitable for manufacturing laser diodes to be used as light sources for Blu-ray disc drives or projectors. GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts

5*10.5mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, and superior surface quality. (20-21)/(20-2-1) face Free-standing GaN Substrates Item