SiC Epitaxial Wafer
SiC N Type Substrate
6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Currently silicon carbide (SiC) is widely used for high power MMIC applications. SiC is also used as a substrate for epitaxial growth of GaN for even higher power MMIC devices. High Temperature Devices. Because SiC has a high thermal conductivity, SiC dissipates heat more rapidly than other semiconductor materials.
6inch SiC Epitaxial Wafer
P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4°toward ±0.5 ° 6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Our company hava a complete SiC(silicon carbide) wafer substrate production line integrating crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Nowadays we supply commercial 4H and 6H SiC wafers with semi insulation