Photovoltaic Laser Equipment

Equipment Introduction Adopting self-developed lasers and optical path structures, this equipment is designed for scribing perovskite and edge cleaning of the perovskite layer. It first uses ultrafast laser for cutting and modification, followed by CO₂ laser for wafer separation, achieving high-quality processing with no chipping and no cracks. Highlights ・Adopts self-developed picosecond laser for cutting and self-developed semiconductor laser for splitting, equipped with an

Equipment Introduction This Perovskite P1/P4 laser scribing and edge cleaning machine can perform P1 laser scribing: removing the TCO layer, with the resistance on both sides of the P1 scribe line exceeding 20 MΩ, no TCO residue inside the scribe channel, and no damage to the glass substrate. Meanwhile, it can also perform P4 laser edge cleaning: using laser technology to remove the deposited film at the cell edge, reserving the area for subsequent packaging, removing all

Equipment Introduction The laser beam irradiates the PSG surface and penetrates into the Poly layer, where the surface of the Poly layer absorbs photon energy and converts it into heat, causing thermal expansion on the Poly layer surface; the force generated by the expansion destroys the PSG structure and significantly reduces its compactness, so the modified PSG can be removed by alkaline cleaning after laser treatment. After the laser selectively acts on the PSG in non

Equipment Introduction This machine adopts a picosecond laser to process perovskite, light-absorbing layers or metal electrode layers. Driven by short-pulse high-peak laser, it ensures no craters at the edges while scribing on the material surface, delivering controllable and stable processing results. It can accurately position and remove the target film layers to a precise depth without damaging the TCO substrate, and the scribed grooves feature excellent flatness and

Equipment Introduction The equipment’s laser system uses instantaneous high-energy-density laser to achieve ablation and evaporation, selectively removing masks or dielectric films, and is used to remove the BSG layer from designated areas of battery wafers. It supports an automatic loading and unloading system, compatible with the customer’s on-site AGV system. Carrier cassettes are automatically loaded from AGV to the equipment’s loading conveyor belt; silicon wafers are

Equipment Overview The equipment irradiates the cell surface with high-energy laser to excite carriers and generate localized high-density current, which triggers interdiffusion between the metal grid lines and the silicon substrate, forming excellent ohmic contact and effectively reducing contact resistance. Meanwhile, it avoids large-area damage to the passivation layer, thereby improving open-circuit voltage and short-circuit current, and significantly enhancing the