Single FETs, MOSFETs
60V N Channel MOSFET Siliup SP60N03GTH with Low Gate Charge and Tested Single Pulse Avalanche Energy
Product Overview The SP60N03GTH is a 60V N-Channel Power MOSFET designed for power switching applications. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for hard switched and high frequency circuits, as well as uninterruptible power supplies. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP60N03GTH
Power MOSFET Siliup SP60P03GHTD 60V P Channel with Low Gate Charge and High Avalanche Energy Capability
Product Overview The SP60P03GHTD is a 60V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for power switching applications, DC-DC converters, and power management systems. It features 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP60P03GHTD
switching device Siliup SP010N20GTH 100V N Channel MOSFET with 30A continuous drain current rating
Product Overview The SP010N20GTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:
low rds on p channel mosfet Siliup SP30P03TH 30 volt device ideal for load switching and power management
Product Overview The SP30P03TH is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications such as DC-DC converters and load switching. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 30P03 Package: TO-252 Material: Silicon (implied by "Siliup Semiconductor") Technical
n channel power mosfet with single pulse avalanche energy test Siliup SP011N01GHTO 110V toll package
Product Overview The SP011N01GHTO is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management. It is available in the TOLL package. Product Attributes Brand: Siliup Semiconductor
60V complementary MOSFET Siliup SP6023CNK designed for high reliability in power management systems
Product Overview The SP6023CNK is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, this device offers fast switching speeds and a surface mount package, making it suitable for applications such as DC-DC converters and motor control. It is ROHS compliant and Halogen-Free, with 100% single pulse avalanche energy testing for reliability. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model:
power management with Siliup SP60P30NJ 60V P Channel MOSFET featuring low on resistance and fast switching
Product Overview The SP60P30NJ is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and low on-resistance, making it suitable for applications such as DC-DC converters and power management systems. This device is tested for 100% single pulse avalanche energy, ensuring reliability in demanding conditions. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:
Power Switching 100V N Channel MOSFET Featuring Low RDSon Siliup SP010N02GHTF Suitable for DC DC Converters
Product Overview The SP010N02GHTF is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP010N02GH
Silicon Carbide MOSFET Siliup SP35N120CTF 1200V High Voltage Device for Photovoltaic Inverters and Motor Drives
Product Overview The SP35N120CTF is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high-speed switching applications, it offers low capacitances, high blocking voltage with low RDS(on), and is designed for ease of paralleling and driving. This RoHS-compliant MOSFET is suitable for a wide range of power electronics applications including Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS
Power Switching MOSFET Siliup SP010N02AGHTF Featuring Low RDSon and TO247 Package for DC-DC Converters
Product Overview The SP010N02AGHTF is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is designed for power switching applications, DC-DC converters, and power management systems. It comes in a TO-247 package. Product Attributes Brand: Siliup Semiconductor Technology Co.
Power MOSFET Siliup BSS84 60V P Channel Suitable for Battery Switch and DC DC Converter Applications
Product Overview The Siliup Semiconductor BSS84 is a 60V P-Channel MOSFET designed for high power and current handling capabilities. It is suitable for surface mount applications and is ideal for use in battery switches and DC/DC converters. This device offers robust performance with key electrical characteristics optimized for efficient operation. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: BSS84 Package: SOT-23 Marking: B84 Origin: China
Power MOSFET Siliup SP025N20GHTQ 250V N Channel with Advanced Split Gate Trench Technology and Low Gate Charge
Product Overview The SP025N20GHTQ is a 250V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management systems. It comes in a TO-220-3L package. Product Attributes Brand: Siliup Semiconductor
High Reliability 30V N Channel MOSFET Siliup SP30N13TH Tested for Single Pulse Avalanche Energy
Product Overview The SP30N13TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, with a typical Rdson of 13m at 10V and 16m at 4.5V. This MOSFET is designed for applications such as DC-DC converters and load switching, and is 100% tested for single pulse avalanche energy. The device comes in a TO-252 package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:
S2M040150HJ N Channel Enhancement Mode Silicon Carbide MOSFET 1500V Low On Resistance Fast Switching
Product Overview The S2M040150HJ is a 1500V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. This N-Channel Enhancement mode MOSFET features high-speed switching capabilities with very low switching losses and fully controllable dv/dt. It offers a high blocking voltage combined with low on-resistance and a fast intrinsic diode with low reverse recovery charge (Qrr). Its temperature-independent turn-off switching losses and halogen-free, RoHS
Low Gate Charge and RDSon 120V N Channel Power MOSFET Siliup SP012N03AGHTO for DC DC Power Systems
Product Overview The SP012N03AGHTO is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This MOSFET is designed for high-speed power switching applications, DC-DC converters, and power management systems. Its key advantages include low gate charge and RDS(on), low reverse transfer capacitances, and 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor
N Channel MOSFET Siliup SP013N05AGHTD with fast switching speed and high avalanche energy capability
Product Overview The SP013N05AGHTD is a 135V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits. Product Attributes Brand: Siliup Semiconductor
Siliup SP25N50TF 500V N Channel Planar MOSFET Optimized for DC DC Converters and Switching Circuits
Product Overview The SP25N50TF is a 500V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it ideal for DC-DC converters and high-frequency switching applications, including synchronous rectification. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP25N50TF Technology: N-Channel Planar MOSFET
P Channel MOSFET Shenzhen ruichips Semicon RU30P3B with super high density cell design and RoHS compliance
Product OverviewThe RU30P3B is a P-Channel Advanced Power MOSFET from Ruichips Semiconductor, designed for efficient power management. It features a -30V drain-source voltage and a continuous drain current of -3.5A, with low on-resistance of 50m (Typ.) at VGS=-10V and 80m (Typ.) at VGS=-4.5V. This MOSFET boasts a super high-density cell design, offering reliability and ruggedness. It is available in lead-free and green (RoHS compliant) versions.Product AttributesBrand:
High Power 60V Dual N Channel MOSFET Siliup 2N7002DW for Battery Switch and DC DC Converter Circuits
Product Overview The 2N7002DW is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount package. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: 2N7002DW Technology: Siliup Semiconductor Technology Technical Specifications Parameter Symbol Conditions Min. Typ. Max.
power conversion device Siliup SP30N06LTH N Channel MOSFET with low RDS on and 60 amp drain current rating
Product Overview The SP30N06LTH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching applications. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters and synchronous rectification. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: