3.0 W/mK Thermally Conductive Silicone Potting Compound for IGBT Power Module BMS PCB Encapsulation UL94 V-0
3.0 W/mK Thermally Conductive Silicone Potting Compound for Power Electronics Encapsulation
The HN-8830A/B is a high-performance, two-component addition-cure silicone potting compound engineered for demanding power electronics applications. With an industry-leading 3.0 W/m·K thermal conductivity, it efficiently dissipates heat from IGBT modules, power semiconductors, BMS circuits, and PCB assemblies, ensuring long-term reliability under extreme thermal cycling conditions.
Key Features & Advantages
- Superior Thermal Management: 3.0 W/m·K thermal conductivity achieved through high-density aluminum oxide and aluminum nitride filler packing, outperforming standard 1.0-2.0 W/mK potting compounds.
- IGBT Power Module Optimized: Specifically formulated for IGBT, MOSFET, and SiC power module encapsulation, preventing thermal runaway in high-power switching applications.
- UL94 V-0 Flame Retardancy: Self-extinguishing formulation meets the strictest fire safety requirements for EV battery systems, charging infrastructure, and industrial power supplies.
- Excellent Electrical Insulation: Dielectric strength ≥18 kV/mm provides reliable high-voltage isolation for BMS, traction inverters, and DC-DC converters.
- Wide Operating Temperature: Maintains stable mechanical and electrical properties from -40°C to +150°C, suitable for under-hood automotive and outdoor industrial environments.
- Low Viscosity & Self-Leveling: 11,000±2,000 mPa·s viscosity enables complete penetration into tight PCB gaps and complex IGBT module geometries without air entrapment.
- RoHS & REACH Compliant: Fully compliant with EU environmental regulations for global supply chain acceptance.
Target Applications
| Application Field | Specific Uses |
|---|---|
| New Energy Vehicles (EV) | On-Board Charger (OBC), Battery Management System (BMS), DC-DC Converter, Traction Inverter, Motor Controller, PTC Heater Controller |
| Power Electronics | IGBT Module Encapsulation, Power MOSFET Packaging, SiC/GaN Power Device Potting, High-Voltage Transformer, Power Factor Correction (PFC) Module |
| Industrial Electronics | Variable Frequency Drive (VFD), Servo Drive, Industrial UPS, Welding Machine Controller, High-Power LED Driver |
| Energy Storage Systems | Battery Pack Module Sealing, Energy Storage Converter (PCS), Grid-Tie Inverter, Solar Junction Box |
| 5G & Telecom | 5G Base Station Power Supply, RRU/AAU Encapsulation, Telecom Rectifier Module |
Technical Specifications
| Parameter | Value |
|---|---|
| Appearance (Part A/B) | Grey Liquid / Transparent to Slightly Yellow Liquid |
| Mix Ratio (A:B by Weight) | 1:1 |
| Mixed Viscosity | 11,000 ± 2,000 mPa·s @ 25°C |
| Pot Life @ 25°C | 60-90 minutes |
| Curing Time @ 25°C | 4-6 hours (tack-free), 24 hours (full cure) |
| Hardness | 45-50 Shore A |
| Thermal Conductivity | 3.0 W/m·K (ASTM D5470) |
| Dielectric Strength | ≥18 kV/mm |
| Volume Resistivity | ≥1.0 * 10¹⁴ Ω·cm |
| Flame Retardant Rating | UL94 V-0 (Equivalent) |
| Temperature Range | -40°C to +150°C |
| Density (Cured) | 2.65 ± 0.05 g/cm³ |
| Linear Shrinkage | <0.1% |
| Water Absorption (24h) | <0.2% |
Why Choose HanasT HN-8830A/B?
As a leading silicone potting compound manufacturer in China, Shenzhen Hanast New Material Co., Ltd. provides full OEM/ODM customization services. Our 40,000-square-meter facility with advanced thermal conductivity testers, laser particle size analyzers, and high-voltage dielectric strength testers ensures consistent batch-to-batch quality. We offer free samples for customer evaluation, custom formulation adjustments for specific viscosity, hardness, or thermal conductivity requirements, and comprehensive MSDS/TDS documentation with every shipment. Contact our engineering team today to discuss your IGBT potting, BMS encapsulation, or PCB potting project requirements.
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Have questions about our products or want to discuss a custom order? Our team is ready to help you.