Infrared Photoelectric Sensor

High-sensitivity silicon photodiode for visible to near-infrared detection. Features 320-1100nm spectral range, 960nm peak sensitivity, and 30V reverse voltage. Durable TO-18 metal package with integrated lens. Ideal for photometers, industrial automation, and medical devices. Made in Japan.

High responsivity pyroelectric IR sensor for gas detection. Features 150,000 V/W responsivity, 1000 µm element size, and low noise CMOS op amp. Offers exceptional thermal stability and signal-to-noise ratio of ~10,000. Ideal for industrial gas analysis.

High sensitivity Si Pin photodiode with 920nm peak wavelength and 0.72 A/W responsivity. Features ceramic chip carrier packaging, 20MHz cutoff frequency, and 0.72μs rise time. Ideal for LiDAR, barcode recognition, and space light transmission applications with superior noise performance and thermal stability.

High-performance silicon photodiode featuring 75% quantum efficiency at 200nm UV, 0.5 A/W sensitivity, and 3μs rise time. Ideal for precision photometric applications requiring low capacitance and broad spectral response from ultraviolet to infrared wavelengths. Professional-grade component for scientific and industrial measurement systems.

High sensitivity silicon PIN photodiode in a compact plastic SIP package. Features 0.55 A/W photosensitivity, 15 MHz cutoff frequency, and 320-1100 nm spectral range. Ideal for near infrared detection with fast response and low noise.

RE200B dual pyroelectric sensor detects human body infrared radiation with high stability. Features 2.0x1.0mm2 sensitive area, output signal >2.5V, working voltage 2.2-15V. Ideal for motion detection and security systems.

High sensitivity MPPC SiPM with 15% PDE at 905nm and low crosstalk. Features microlens, 1089 pixels, and 90% fill factor. Ideal for LiDAR distance measurement. Compact glass epoxy package with AR-coated window.

Single-channel pyroelectric flame sensor with 3.8um detection band, low microphone effect, and wide FOV. Ideal for oil stations, warehouses, factories, and high-risk areas. Reliable voltage mode output with 200ms thermal time constant.

Integrates a 16 ch Si APD array and high-speed transimpedance amplifier for direct TOF distance measurement. Features gain stabilization against temperature fluctuations, eliminating the need for a temperature sensor. High cutoff frequency of 300 MHz ensures fast response.

High brightness 3200 lumens xenon lamp, 3x brighter than halogen. 35W low power consumption with 3000-hour lifespan. UV-cut quartz glass, instant 20KV start, stable 85V operation. Ideal for automotive headlights.

The S12698-02 silicon photodiode features a resin-free metal TO-8 package with UV glass window for high reliability under strong UV irradiation. With 190-1000nm spectral response, 0.38 A/W sensitivity, and low dark current, it is ideal for UV monitoring applications.

High sensitivity silicon APD for 800 nm band with low temperature coefficient of 0.4 V/°C. Features 0.5 A/W photosensitivity, 600 MHz cutoff frequency, and stable operation across wide temperature range. Ideal for distance meters and free space optics.

High-performance MEMS infrared emitter with 4 chips on TO8 connector, ideal for low concentration gas analysis. Features wide emissivity 2-15µm, membrane temperature up to 850°C, long lifetime >100,000h, and high modulation frequency. Suitable for industrial, aerospace, and demanding applications.

Low noise InGaAs PIN photodiode G12180-005A in TO-18 package with 0.5mm receiving surface. Features low dark current (0.75 nA), high sensitivity (1.1 A/W at 1.55μm), and 200 MHz cutoff frequency. Ideal for industrial and telecom applications.

Low noise InGaAs PIN photodiode with 0.3mm receiving surface, 1.55μm peak sensitivity, and 600MHz cutoff frequency. Features low dark current and junction capacitance for high precision. Ideal for industrial and telecom applications.

High UV sensitivity with 75% QE at 200nm, suppressed near infrared response, and low dark current of 2pA. Ideal for precision photometry from ultraviolet to visible light. Reliable metal TO-18 package, 5V reverse voltage max.

High-sensitivity silicon photodiode with 960nm peak wavelength, 3.6x3.6mm receiving area, and 30V max reverse voltage. Ideal for photometers in visible to near-infrared range. Durable metal TO-5 package ensures reliability. Custom options available.

High-sensitivity silicon photodiode with 5.9x1.1mm receiving surface, spectral range 340-1000nm, and 0.36A/W photosensitivity. Encapsulated ceramic package ensures durability. Ideal for precise UV to visible photometry. Custom options available.

High reliability silicon photodiode with 5.8x5.8mm active area, spectral range 320-1000nm, and peak sensitivity at 720nm. Features low dark current (20pA), high UV sensitivity (QE 75% at 200nm), and suppressed near-infrared response. Ideal for precise photometric measurements in industrial and laboratory applications.

High sensitivity silicon photodiode for visible light detection. Features 380-780nm spectral range, 550nm peak wavelength, and fast 0.5μs rise time. Metal package with CIE filter. Ideal for optical measurement and environmental monitoring. Custom options available.