Infrared Photoelectric Sensor

Product Description: YJJ DS-UV254P3Z-3535AA-S-06 Ultraviolet Light Emitting Diode (UVC LED) Is Used for Air Disinfection Features: Ultraviolet light-emitting diode (UVC LED) produced by DS-UV254P3Z-3535AA-S-06 is mainly used for air disinfection. Product parameters Wavelength: 254nm, 265nm, 280nm Power: 1W/0.6W Chip size: 3535 Package form: Chip/SMD Luminescent color: Purple Working voltage: 0.6W Light intensity: 15mW - 30mW Service life: 30,000 hours Certification: RoHS

G12180-020A High-performance Photoelectric Sensor For Conveyor Belt Systems Material Handling Equipment 1. General Description: The G12180-020A is a high-performance photoelectric sensor designed for precise object detection and position sensing. It adopts advanced optical sensing technology to ensure stable operation in various industrial and commercial environments, with strong anti-interference ability and reliable detection performance. 2. Product Features: Wide Detection

Product Description: YJJ G12180-020A InGaAs PIN Photodiode Non-Cooled Type For Optical Fiber Communication Features: Sensitive area: φ1mm Product characteristics Low noise Low junction capacitance Low dark current Sensitive area: φ1mm Detailed parameter The sensitive area is φ1mm The number of pixels is 1 Encapsulation Metal Encapsulation type: TO-18 Cooling mode Non-cooled Spectral response range is 0.9 to 1.7 μm The peak sensitivity wavelength (typical value) is 1.55 μm

InGaAs PIN photodiodes G12180-010A Receiving surface: φ1 mm Features: - Low noise, low dark current - Low junction capacitance - Light receiving surface: φ1 mm - Low noise Maximum Sensitivity Wavelength (Typical) 1.55 μm Light sensitivity (typical) 1.1 A/W Dark current (max) 4 nA Cut-off Frequency (typical) 60 MHz Junction Capacitance (typical) 55 pF Noise equivalent power (typical) 1.4×10-14 W/Hz1/2 Sensitivity wavelength range 0.9 to 1.7 μm Cooling Non-cooled

S16838-01MS silicon photodiode for Visible Light Intensity Measurement Color Identification & Sorting 1. Product Features: Visible-Light Focused Spectral Response: With a spectral response range of 320nm to 730nm and a peak sensitivity wavelength of 560nm (typical), it is specifically optimized for visible light detection. This narrow yet targeted waveband coverage ensures high specificity for visible light signals, avoiding interference from non-visible spectral regions (e.g

S16838-02MS Silicon photodiode For Optical Detection Equipment Automated Industrial Production Line Product Features: Broad Spectral Response : The spectral response range is 320 to 1100nm, which can respond to ultraviolet, visible and part of near-infrared light, and is applicable to the detection and measurement of light sources with a wide variety of wavelengths. High Sensitivity: Its peak sensitivity is 0.58A/W. It can effectively convert photons into electrical signals

Highly Sensitive S7686 Si Photodiode Photodiode For Luminance meter Illuminometer Photodiode with sensitivity close to spectral luminous efficiency S7686 is a Si photodiode having a spectral response characteristic that is more similar to the human eye sensitivity (spectral luminous efficiency) than our conventional visible-compensated sensors (S1133, etc.). Features: Spectral response analogous to CIE spectral luminous efficiency Spectral response range: 480 to 660 nm Peak

S6931-01 Silicon Photodiodes for Visible Light Detection Systems Consumer Electronics Silicon photodiodes molded into clear plastic packages Features - Visible to near-infrared wavelength band (suppressed infrared sensitivity type) Applications: Visible Light Detection Systems: Used in devices such as light intensity meters, visible light sensors for ambient light monitoring, and visible light signal receivers. It can accurately detect the intensity and changes of visible

S6775 S6775-01 Silicon PIN Photodiode High-speed Response For Optical Switching Systems Plastic SIP (Single In-Line Package) The S6775 is a silicon PIN photodiode with a large photosensitive surface molded into a clear plastic SIP for detection in the near-infrared range. This silicon PIN photodiode features high sensitivity, high-speed response, and a large photoreceptor area. Features: - Visible to Near-Infrared Wavelength Range - High Sensitivity - High Speed Response -

Silicon photodiodes S1226-8BK It is suitable for precise photometry in the ultraviolet to visible wavelength band; Suppresses near-infrared sensitivity Features - High UV sensitivity: QE = 75 % (λ = 200 nm) - Suppression of NIR sensitivity - Low dark current - High reliability Maximum Sensitivity Wavelength (Typical) 720 nm Light sensitivity (typical) 0.36 A/W Dark current (max) 20 pA Rise Time (Typical) 2 μs Junction Capacitance (typical) 1200 pF Noise equivalent power

S1133 S1133-01 S1133-14 S16868-02MS Ceramic package photodiode with low dark current Features: lS1087, S1133 : For visible range S1087-01, S1133-01: For visible to IR range S1133-14 : For visible to near IR range Applications: Exposure meter Illuminometer Camera auto exposure Strobo light control Copier Display light control Optical switch Shunt resistance Rsh VR=10 mV 10 Spectral response range S1133 320 TO 730 Spectral response range S1133-14 320 TO 1000

Product Description: YJJ S1226-8BK Type Highly Reliable Silicon Photodiode Is Suitable For Precise Photometric Measurement Of Visible Light Features: Suitable for precision photometry in ultraviolet to visible wavelengths; Suppress near infrared sensitivity peculiarity - High UV sensitivity: QE = 75% (λ = 200 nm) - Suppress near infrared sensitivity - Low dark current - High reliability Receiving surface 5.8 × 5.8 mm Encapsulation metal Package category TO-8 Refrigeration

S10227-10 Photoelectric Sensor Small-sized Resin-sealed CMOS Image Sensor For Barcode Scanning Displacement Measurement Use Cases: Barcode Scanning: The S10227 - 10's high - resolution 1(H)×512(V) pixel configuration and 6.4 - millimeter - long photosensitive area are great for reading barcodes. It can precisely identify barcode lines and spaces, rapidly converting them into electrical signals for subsequent decoding, facilitating fast and accurate barcode data capture .

Infrared Light Source JSIR350-4-AL-R-D6 For NDIR Gas Analysis Industrial Commercial Product Features: The sensor has an adjustable input power, which can meet different application requirements. It features a high - temperature - resistant design with a hot resistance of 40 ± 20 Ω, enabling it to maintain stable and accurate readings in high - temperature environments. With a high - modulation frequency, it is suitable for applications requiring fast response. It has a large

EMIRS200-AT01T-BR090 Low-Power Portable Infrared Light Source For Portable Gas Analyzers Product Overview: The EMIRS200-AT01T-BR090 is a compact, high-efficiency infrared (IR) light source designed for portable analytical instruments, gas sensors, and spectroscopic applications. Leveraging MEMS-based blackbody radiation technology, it delivers stable, broadband IR emission across 2–14 μm with low power consumption. The integrated TO-39 metal package with a reflective surface

S8745-01 Infrared Photoelectric Sensor For Precision Analytical Instruments Industrial Measuring Equipment 1. Application Areas: Precision Analytical Instruments: Used in devices like ultraviolet (UV) - near - infrared (NIR) spectrometers, chromatographs, and photometers for weak light signal detection. It enables accurate measurement of light absorption, emission, or transmission across the UV - NIR spectrum, supporting quantitative analysis in fields such as chemistry,

G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems Application Areas: Optical Communication Systems: Detects high-speed NIR signals (1.3/1.55 μm bands) in fiber optic transceivers, supporting reliable data transmission in telecom networks. Precision Optical Power Meters: Serves as a core sensing component for measuring NIR optical power in laboratory testing, fiber optic maintenance, and laser calibration. Laser Monitoring &

Silicon photodiodes S1336-8BQ It is suitable for precise photometry in the ultraviolet to near-infrared wavelength range Features - High sensitivity in the ultraviolet band - Low capacitance - High reliability Maximum Sensitivity Wavelength (Typical) 960 nm Light sensitivity (typical) 0.5 A/W Dark current (max) 100 pA Rise Time (Typical) 1 μs Junction Capacitance (typical) 380 pF Noise equivalent power (typical) 1.3×10-14 W/Hz1/2 Silicon photodiodes S1336-8BK It is suitable

Silicon photodiodes S1336-5BK It is suitable for precise photometry in the ultraviolet to near-infrared wavelength range Features - High sensitivity in the ultraviolet band - Low capacitance - High reliability Maximum Sensitivity Wavelength (Typical) 960 nm Light sensitivity (typical) 0.5 A/W Dark current (max) 30 pA Rise Time (Typical) 0.2 μs Junction Capacitance (typical) 65 pF Noise equivalent power (typical) 8.1×10-15 W/Hz1/2 Silicon photodiodes S1336-5BQ It is suitable

Silicon photodiodes S1336-18BQ It is suitable for precise photometry in the ultraviolet to near-infrared wavelength range Features - High sensitivity in the ultraviolet band - Low capacitance - High reliability Maximum Sensitivity Wavelength (Typical) 960 nm Light sensitivity (typical) 0.5 A/W Dark current (max) 20 pA Rise Time (Typical) 0.1 μs Junction Capacitance (typical) 20 pF Noise equivalent power (typical) 5.7×10-15 W/Hz1/2 Silicon photodiodes S1336-18BK It is suitable