Infrared Photoelectric Sensor

Product Description: S1337-66BQ Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands Features: Suitable for precise photometry in ultraviolet to infrared bands peculiarity - High UV sensitivity: QE 75% (λ=200 nm) - Low capacitance Receiving surface 5.8 × 5.8 mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 190 to 1100 nm Maximum sensitivity wavelength (typical value)

Product Description: Receiving surface 10 × 10 mm Number of pixels 1 Encapsulated ceramics Refrigeration uncooled type Reverse voltage (Max.) 5 V Sensitivity wavelength range 190 to 1100 nm Maximum sensitivity wavelength (typical value) 960 nm Photosensitivity (typical value) 0.5A /W Dark current (Max.) 200 pA Rise time (typical value) 3 μs Junction capacitance (typical) 1100 pF Noise equivalent power (typical value) 1.8×10-14 W/Hz1/2 Features: Product Name: Infrared

High-performance silicon photodiode featuring 75% quantum efficiency at 200nm UV, 0.5 A/W sensitivity, and 3μs rise time. Ideal for precision photometric applications requiring low capacitance and broad spectral response from ultraviolet to infrared wavelengths. Professional-grade component for scientific and industrial measurement systems.

Professional-grade silicon photodetector offering 75% quantum efficiency at 200 nm UV and 1 μs rise time. Features low 100 pA dark current and 380 pF junction capacitance for precise photometric measurements across ultraviolet to infrared spectrum. Ideal for scientific instruments and optical measurement systems requiring high accuracy.

S16765-01MS Infrared Photoelectric Sensor General Information: Product Name: Silicon photodiode S16765 - 01MS Brand: Hamamatsu Photonics Package Specification: Plastic package Category: Silicon (Si) photodiode Application Range: Visible to near - infrared range Performance Parameters: Photosensitive Area: 2.8 × 2.4 mm Number of Pixels: 1 Cooling Method: Non - cooled type Spectral Response Range: 320 - 1000 nm Peak Sensitivity Wavelength (Typical Value): 720 nm Photosensitivit

S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter Specification Description Low dark current, pre-molded packaging These photodiodes provide low dark current for high-precision measurement from low illumination to high illumination. Pre-molded packaging is designed to block stray light from the sides and back of the package to the light-receiving surface. Characteristics -S16838-01MS: Applicable to the visible light band -S16838 /S16840-02MS: Applicable to the visible

Y1964 xenon lamp • Basic principle: Various chemical gases are filled in the UV-Cut anti-ultraviolet crystal quartz glass tube, mainly inert gases such as xenon and iodide. The 12V or 24V low-voltage DC voltage on the vehicle is instantly raised to over 20KV through the starter. The electrodes at both ends of the bulb are instantaneously discharged under high voltage, causing xenon electrons to ionize and generate a white super-strong arc light. The voltage stabilizer then

LIM-252-GH Planar Multi Channel Pyroelectric Detector TO39 Small Chip Thermal Compensation Pyreos thin film pyroelectric infrared (IR) sensors for gas detection and other substance concentration measurements offer exceptionally high responsivity, low microphonics and class leading thermal and electrical stability. This high performance current mode sensor achieves a signal to noise of ~10,000 and offers a fast, stable response over a wide operating frequency range. The sensor

Advanced silicon photodiode sensor featuring spectral response closely matching human eye luminous efficiency (480-660nm range). Offers 0.38 A/W sensitivity, 20 pA dark current, and ceramic package for high reliability. Ideal for precision light detection applications requiring accurate visible spectrum measurement.

The C12880MA mini spectrometer features an ultra-compact 20.1×12.5×10.1mm fingertip-sized design with 5g weight and 340-850nm spectral range. This high-sensitivity spectrometer offers 15nm resolution, electronic shutter function, and hermetic TO-10 packaging for reliable integration into mobile measurement equipment and compact analytical devices.

S6931-01 Silicon Photodiode Photodiode Molded Into Clear Plastic Package Features: Detailed parameter Receiving surface 2.4 × 2.8mm The pixel number is 1 Packaging plastics Cooling non-cooling type Reverse voltage (Max.) 10 V Sensitivity wavelength range 320 to 1000 nm Maximum sensitivity wavelength (typical value) 720 nm Photosensitivity (typical value) 0.48A /W Dark current (Max.) 20 pA Rise time (typical value) 0.5μs Junction capacitance (typical value) 200 pF Typical

S3071 Si PIN Photodiode Large Area High Speed Pulsed Light Detection Features: S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection. Features l Active area size S3071: φ5.0 mm S3072: φ3.0 mm S3399: φ3.0 mm S3883: φ1.5 mm l Cut-off frequency S3071: 40 MHz

S12742-254 Silicon Photodiode Photodiode With Filter For Monochromatic Light 254 nm Detection Band Interference Filter Suitable For Monochromatic Light 254nm Detection Of Silicon Photodiode S12742-254 Features: Photodiode with interference filter for monochromatic light (254 nm) detection Si photodiode www.hamamatsu.com 1 The S12742-254 uses an interference filter for its window and is sensitive only to monochromatic light. The spectral response width is extremely narrow at

Product Description: S8745-01 Silicon Photodiode With Preamplifier Low Noise Sensor Features: Preamplifier photodiodes with integrated feedback resistors and capacitors S8745-01 is a low noise sensor composed of photodiodes, operational amplifiers, feedback resistors and capacitors, all packaged in a very small package. When connected to a power source, it can be used for weak light measurements, such as analysis devices or measuring devices. Its light sensitive surface is

Product Description: S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry Features: Suitable for precise photometric determination from ultraviolet to near infrared features ● High sensitivity in ultraviolet band Low low capacitance ● High reliability Rise time (typical value). 0.2 u s Junction capacitance (typical value) 65 pF Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V,

High-performance S3071 Si PIN photodiode featuring large 5.0mm photosensitive area with 40MHz frequency response. Ideal for FSO systems and high-speed light detection. TO-8 metal package ensures reliability with 0.54 A/W sensitivity and 920nm peak wavelength. Perfect for industrial optical sensing applications.

L9657-03 Red UV Lamp Sensor Transmitter Tube Imported With Original Package Features: 1) Aluminum gallium nitride as the base material 2) Schottky photodiode 3) Photovoltaic mode operation 4) Good day blindness 1) Storage temperature: -40~+90℃ 2) Operating temperature: -30~+85℃ 3) Reverse voltage: 3V (max) 4) Forward current: 1mA (max) 5) Light source power: 0.1u~100mW/cm²(UVC lamp) 6) Welding temperature: 260℃ (max) 7) Spectral detection range: 220~280nm (25℃, 10% of R)

Product Description: R9454 Flame Detector Ultraviolet Light Incident From The Side Of The Tube (UVTRON) Features: R9454 is a side-window flame detector with a similar profile to the R2868 UVTRON (UV light coming from the side of the tube body). It also has high sensitivity and wide field of view (directionality). Maximum background noise: 10 min-1 The average life is 10000 h [Recommended operating parameters] Supply voltage (DC) 400±25 V [Recommended operating parameters]

S16786-0515WM Near Infrared High Sensitivity MPPC Methyl Methacrylate The S16786-0515WM is a near-infrared high-sensitivity Mppc (SiPM) designed for LiDAR applications. The smaller SPAD (Single Photon Avalanche Diode) size improves the dynamic range, and the microlens provide a high PDE (Photon Detection Effciency). And MPpCs come standard with a trench to reduce crosstalk. Features High photon detection efficiency: 15%% (λ=905 nm) Low crosstalk probability: 2%% typ. Equipped

Silicon Pin photodiodes S1226-18BK It is suitable for precise photometry in the ultraviolet to visible wavelength band; Suppresses near-infrared sensitivity Features - High UV sensitivity: QE = 75 % (λ = 200 nm) - Suppression of NIR sensitivity - Low dark current - High reliability Maximum Sensitivity Wavelength (Typical) 720 nm Light sensitivity (typical) 0.36 A/W Dark current (max) 2pA Rise Time (Typical) 0.15 μs Junction Capacitance (typical) 35 pF Noise equivalent power