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Infrared Photoelectric Sensor

China YJJ S1227-33BQ Quartz Window Silicon Photodiode 190-1000nm 0.36A/W for UV to Visible Precision Photometry for sale

YJJ S1227-33BQ Quartz Window Silicon Photodiode 190-1000nm 0.36A/W for UV to Visible Precision Photometry

Price: Negotiable
MOQ: 1
Delivery Time: 3 days

The S1227-33BQ features a 2.4x2.4mm receiving surface, 190-1000nm spectral range, and 0.36A/W sensitivity. Encapsulated in ceramic with low dark current (5pA) and fast 0.5μs rise time, ideal for precision photometry. Custom options available.

China S1227-16BQ SI Photodiode Sensor 190-1000nm UV to Visible Precision Photometry 0.36 A/W for sale

S1227-16BQ SI Photodiode Sensor 190-1000nm UV to Visible Precision Photometry 0.36 A/W

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

High UV sensitivity with quartz window, 75% QE at 200nm. Low dark current 5pA, fast 0.5μs rise time. Ideal for precision photometry from UV to visible. Custom options available.

China Silicon Pin Photodiode S6429-01 S6428-01 S6430-01 RGB Color Sensor 540nm 460nm 660nm for sale

Silicon Pin Photodiode S6429-01 S6428-01 S6430-01 RGB Color Sensor 540nm 460nm 660nm

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

High-sensitivity RGB color sensor series for green, blue, and red light detection. Plastic package, low dark current, and near-infrared insensitivity ensure accurate white balance adjustment. Ideal for industrial color sensing applications.

China Hamamatsu S1337-1010BQ S1337-1010BR Silicon Photodiode 10x10mm 190-1100nm for sale

Hamamatsu S1337-1010BQ S1337-1010BR Silicon Photodiode 10x10mm 190-1100nm

Price: Negotiable
MOQ: 1
Delivery Time: Negotiable

High precision silicon photodiode with 10x10mm receiving surface, sensitivity from 190 to 1100nm. Features low dark current (200pA), fast 3μs rise time, and ceramic package. Ideal for UV to IR photometry. Custom options available.

China YJJ S3071 Large Area High Speed Silicon PIN Photodiode 5mm 40 MHz for sale

YJJ S3071 Large Area High Speed Silicon PIN Photodiode 5mm 40 MHz

Price: Negotiable
MOQ: 1
Delivery Time: 3 days

The S3071 is a large area silicon PIN photodiode with a 5.0mm receiving surface and 40 MHz cutoff frequency. Ideal for free space optical transmission and high-speed pulsed light detection. Features a TO-8 metal package, 320-1060 nm spectral range, and high reliability.

China Highly Sensitive S7686 Si Photodiode 550 nm Peak for Luminance Meter Illuminometer for sale

Highly Sensitive S7686 Si Photodiode 550 nm Peak for Luminance Meter Illuminometer

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

The S7686 Si photodiode offers spectral response close to human eye sensitivity, with 550 nm peak wavelength and 2.4 × 2.8 mm active area. Ideal for luminance meters and illuminometers, it features high-speed 0.5 μs response, low dark current, and reliable ceramic package.

China YJJ S1226-44BQ Precision Photometry Sensor UV Visible 190-1000nm Near-Infrared Suppression for sale

YJJ S1226-44BQ Precision Photometry Sensor UV Visible 190-1000nm Near-Infrared Suppression

Price: Negotiable
MOQ: 1
Delivery Time: Negotiable

High UV sensitivity with 75% QE at 200 nm. Suppresses near-infrared for accurate photometry. Low dark current, high reliability, TO-5 metal package. Ideal for precision UV-visible measurements.

China Deep UV LED Sterilizer 254-280nm 15-30mW 3535 Chip for Disinfection for sale

Deep UV LED Sterilizer 254-280nm 15-30mW 3535 Chip for Disinfection

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

High-efficiency deep UV LED sterilizer with 254-280nm wavelength and 15-30mW power. Copper base, IP68 rated, RoHS certified. Ideal for photocatalysis and disinfection. Custom options available.

China S7686 SI Photodiode Sensor with 550nm Peak Wavelength and 0.5μs Response Time for Human Eye Spectral Matching for sale Video

S7686 SI Photodiode Sensor with 550nm Peak Wavelength and 0.5μs Response Time for Human Eye Spectral Matching

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

Advanced silicon photodiode sensor featuring spectral response closely matching human eye luminous efficiency (480-660nm range). Offers 0.38 A/W sensitivity, 20 pA dark current, and ceramic package for high reliability. Ideal for precision light detection applications requiring accurate visible spectrum measurement.

China Silicon Photodiodes S1337-66BQ S1337-33BQ Low Capacitance 380pF 5V for sale

Silicon Photodiodes S1337-66BQ S1337-33BQ Low Capacitance 380pF 5V

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

High UV sensitivity silicon photodiodes for precise photometry from UV to IR. Features low capacitance, fast 1μs rise time, and low dark current. Ideal for industrial and scientific applications.

China Visible to Infrared Band Silicon Photodiodes S16840-02MS 0.3 A/W Sensitivity 2.5 μs Rise Time for sale

Visible to Infrared Band Silicon Photodiodes S16840-02MS 0.3 A/W Sensitivity 2.5 μs Rise Time

Price: Negotiable
MOQ: 1
Delivery Time: 5-8 days

Low dark current silicon photodiodes for high-precision measurement from low to high illumination. Pre-molded packaging blocks stray light. Spectral response 320 to 730 nm. Ideal for OEM applications.

China Silicon Pin Photodiodes S1336-8BK S1336-8BQ High Sensitivity Ultraviolet Band 320-1100nm for sale

Silicon Pin Photodiodes S1336-8BK S1336-8BQ High Sensitivity Ultraviolet Band 320-1100nm

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

High sensitivity silicon photodiodes for precise UV to near-infrared photometry. Features low capacitance, high reliability, and 0.5 A/W sensitivity. Ideal for industrial and scientific applications. Custom options available.

China S2387-66R Silicon Photodiode 4 Pixel PIN 190 to 1000 nm TO-5 Metal Package for sale

S2387-66R Silicon Photodiode 4 Pixel PIN 190 to 1000 nm TO-5 Metal Package

Price: Negotiable
MOQ: 1
Delivery Time: 3 days

Four-pixel silicon PIN photodiode with wide spectral response from 190 to 1000 nm. Low crosstalk (max 2%), high-speed response (20 MHz), and TO-5 metal package. Ideal for position sensing and laser beam alignment in photometers.

China Hamamatsu S1133-14 Non-Cooled Silicon Photodiode 1.1x1.1mm TO-18 for NDIR for sale

Hamamatsu S1133-14 Non-Cooled Silicon Photodiode 1.1x1.1mm TO-18 for NDIR

Price: Negotiable
MOQ: 1
Delivery Time: Negotiable

High-sensitivity Hamamatsu photodiode in durable TO-18 metal package. Features 1.1x1.1mm active area, 5V max reverse voltage, and 190-1000nm spectral range. Ideal for NDIR gas analysis, flame detection, and industrial automation. Made in Japan.

China Silicon Pin Photodiode S1336-44BQ S1336-44BK 960nm 0.5A/W High Sensitivity UV Band for sale

Silicon Pin Photodiode S1336-44BQ S1336-44BK 960nm 0.5A/W High Sensitivity UV Band

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

High sensitivity silicon pin photodiodes for UV to near-infrared precise photometry. Features low capacitance, high reliability, 0.5 A/W sensitivity, and 50 pA dark current. Ideal for industrial and scientific applications.

China S8745-01 Silicon Photodiode with Preamplifier Low Noise Sensor 2.4x2.4mm 190-1100nm for sale

S8745-01 Silicon Photodiode with Preamplifier Low Noise Sensor 2.4x2.4mm 190-1100nm

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

The S8745-01 integrates a photodiode, op-amp, and feedback components in a compact TO-5 metal package with quartz window. Ideal for weak light measurements, it offers low noise, high EMC resistance, and variable gain via external resistor. Suitable for UV to near-IR analysis and measuring devices.

China Silicon Pin Photodiodes S1226-44BK S1226-44BQ Low Dark Current 720nm 10pA for sale

Silicon Pin Photodiodes S1226-44BK S1226-44BQ Low Dark Current 720nm 10pA

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

High UV sensitivity with QE 75% at 200nm, suppressed NIR response, and low dark current. Ideal for precise UV to visible photometry. Metal TO-5 package, 190-1000nm range, 1μs rise time. Reliable and customizable for OEM applications.

China YJJ S1337-66BR Silicon Photodiode 340-1100nm 5.8x5.8mm for Precision Photometry for sale

YJJ S1337-66BR Silicon Photodiode 340-1100nm 5.8x5.8mm for Precision Photometry

Price: Negotiable
MOQ: 1
Delivery Time: 3 days

The YJJ S1337-66BR silicon photodiode offers a spectral response of 340 to 1100 nm with peak sensitivity at 960 nm. Encapsulated in ceramic, it features low dark current (100 pA max) and fast 1 μs rise time, ideal for precise UV to IR photometry.

China YJJ G12180-005A InGaAs PIN Photodiode 0.5mm Receiving Surface 0.9 to 1.7 μm for sale

YJJ G12180-005A InGaAs PIN Photodiode 0.5mm Receiving Surface 0.9 to 1.7 μm

Price: Negotiable
MOQ: 1
Delivery Time: 3 days

High-sensitivity InGaAs PIN photodiode with φ0.5mm receiving surface, ideal for 0.9 to 1.7 μm wavelength detection. Features 1.1 A/W photosensitivity, low dark current, and 200 MHz cutoff frequency. Metal TO-18 package ensures durability. Suitable for industrial and telecom applications.

China S5106 Si PIN Photodiode 5x5mm Photosensitive Area Chip Carrier Package for Surface Mount Reflow Soldering for sale Video

S5106 Si PIN Photodiode 5x5mm Photosensitive Area Chip Carrier Package for Surface Mount Reflow Soldering

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

The S5106 Si PIN photodiode features a 5x5mm photosensitive area in a ceramic chip carrier for surface mount reflow soldering. Offers high sensitivity, 20 MHz cutoff frequency, and 320-1100 nm spectral range. Ideal for POS scanners, photometers, and analytical instruments.