Infrared Photoelectric Sensor

The S8745-01 integrates a photodiode with a low-noise op-amp in a compact TO-5 metal package. It offers a broad 190-1100nm spectral response, ultra-low NEP of 11×10−15 W/Hz¹/², and built-in 1 GΩ feedback resistor. Ideal for analytical, medical, and industrial measurement applications requiring high sensitivity and EMC resistance.

High UV sensitivity with QE 75% at 200 nm and low capacitance for precision photometry. Ideal for analytical and optical measurement equipment. Reliable performance from -20 to +60°C.

High-precision digital pyroelectric infrared sensor with differential signal input for superior anti-interference. Features adjustable sensitivity, delay, and light control. Low power consumption with TTL output. Ideal for security, smart home, and industrial automation.

The S1337-33BR silicon photodiode offers a spectral response from 340 to 1100 nm with high sensitivity at 960 nm. Encapsulated in ceramic, it features low dark current (100 pA) and fast 1 μs rise time, ideal for precision UV to IR photometry.

Low dark current 10pA and 2.5μs rise time for high-precision measurement. Plastic pre-molded package blocks stray light. Ideal for OEMs requiring reliable visible to near-infrared detection.

High sensitivity silicon PIN photodiode with a large 2x10mm receiving surface in a ceramic chip carrier for surface mount reflow soldering. Ideal for spatial light transmission, POS scanners, power meters, and analytical instruments.

High sensitivity from visible to near infrared band (320-1100 nm). Features low dark current, high reliability, and linearity. Ideal for photometric determination. Custom options available.

High sensitivity InGaAs PIN photodiode with 2.3 μm peak wavelength and 1.3 A/W photosensitivity. Features low noise, high reliability, and fast response for NIR photometry, gas analysis, and moisture meters. Custom options available.

The YJJ S1227-33BR silicone photodiode features a 2.4x2.4mm ceramic package for precision photometry from UV to visible light. With 340-1000nm spectral range, 0.43 A/W sensitivity, and 0.5μs rise time, it offers low dark current and high reliability. Ideal for industrial and scientific applications.

High sensitivity silicon PIN photodiode in plastic SIP package with visible light cutoff. Features 0.68 A/W photosensitivity, 15 MHz cutoff frequency, and large 5.5x4.8mm receiving surface. Ideal for near infrared detection with high speed response.

Product Description: YJJ LTH-1550-01 Photoelectric Sensor - Photoelectric Switch - Reflective Photoelectric Switch - Used in Automated Equipment Features: I. Basic Product Information Brand: LITEON (Taiwan original factory) Model: LTH-1550-01 Type: Reflective Photoelectric Sensor (Reflective Photoelectric Interrupter) Package: DIP4 Surface Mount 4-pin, standard 2.54mm pitch Standard Sensing Distance: 3.81mm (Optimal Detection Range) Certification: Compliant with RoHS

Product Description: YJJ S5990-01 Two-dimensional PSD Position-Sensitive Detector Photodiode for Optical Position Measurement Features: Device type: Four-sided two-dimensional PSD (Position Sensitive Detector, a type of special photodiode) Model distinction S5990-01: Tray and bulk surface mount model; S5990-11: Roll tape surface mount production model; The same series of large size: S5991-01 (9×9mm photosensitive surface) Core principle Four-sided separated electrode silicon

High sensitivity UVTRON sensor detects faint UV light from flames and discharges. Features 185-260 nm range, 30 mA peak current, and long-range detection up to 125 meters. Durable, compact design with -20 to +60°C operating range.

Large-area silicon PIN photodiode with 5.0mm photosensitive area and 40MHz frequency response. Features low 4300pA dark current, 920nm peak sensitivity, and TO-8 metal package. Ideal for FSO communications, high-speed light detection, and universal photometry applications from visible to infrared spectrum.

High-performance silicon PIN photodiode featuring 190-1100 nm spectral range, 0.5A/W sensitivity, and low 150pF capacitance. Ideal for precision photometry with excellent UV response, fast 0.5μs rise time, and maximum 50pA dark current. Designed for reliable operation in industrial measurement systems.

High-performance Si APD optimized for 800nm near-infrared detection. Features low bias voltage ≤200V, 0.4ns rise time, and 1.2pF capacitance. Metal hermetic packaging ensures durability in harsh environments. Ideal for optical communication, lidar, and analytical instruments.

This 800nm band Si APD operates at low voltages under 200V, ideal for FSO and rangefinders. Features stable low bias operation, high-speed 1000MHz response, high sensitivity, and low noise. Suitable for demanding optical sensing applications.